FR3033938B1 - Diode zener a tension de claquage ajustable - Google Patents

Diode zener a tension de claquage ajustable Download PDF

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Publication number
FR3033938B1
FR3033938B1 FR1552290A FR1552290A FR3033938B1 FR 3033938 B1 FR3033938 B1 FR 3033938B1 FR 1552290 A FR1552290 A FR 1552290A FR 1552290 A FR1552290 A FR 1552290A FR 3033938 B1 FR3033938 B1 FR 3033938B1
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FR
France
Prior art keywords
zener diode
clamping voltage
adjustable clamping
diode junction
subjected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1552290A
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English (en)
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FR3033938A1 (fr
Inventor
Roberto Simola
Pascal FORNARA
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STMicroelectronics Rousset SAS
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STMicroelectronics Rousset SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Rousset SAS filed Critical STMicroelectronics Rousset SAS
Priority to FR1552290A priority Critical patent/FR3033938B1/fr
Priority to CN201520940470.6U priority patent/CN205159337U/zh
Priority to CN202010455022.2A priority patent/CN111599871A/zh
Priority to CN201510818928.5A priority patent/CN105990452B/zh
Priority to US14/963,670 priority patent/US9577053B2/en
Publication of FR3033938A1 publication Critical patent/FR3033938A1/fr
Priority to US15/402,758 priority patent/US9954119B2/en
Application granted granted Critical
Publication of FR3033938B1 publication Critical patent/FR3033938B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66098—Breakdown diodes
    • H01L29/66106—Zener diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8613—Mesa PN junction diodes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)

Abstract

L'invention concerne une diode Zener comprenant : une jonction de diode Zener formée dans un substrat semi-conducteur (SUB) parallèlement à la surface du substrat entre une région de cathode (CD1) et une région d'anode (AD1), des régions conductrices (BDC, EDC, ED1, NW) configurées pour générer un premier champ électrique perpendiculaire à la jonction de diode Zener, lorsqu'elles sont soumises à des tensions adéquates, et des régions conductrices (GT1, GTC) configurées pour générer un second champ électrique dans le plan de la jonction de diode Zener, lorsqu'elles sont soumises à des tensions adéquates.
FR1552290A 2015-03-19 2015-03-19 Diode zener a tension de claquage ajustable Expired - Fee Related FR3033938B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR1552290A FR3033938B1 (fr) 2015-03-19 2015-03-19 Diode zener a tension de claquage ajustable
CN201520940470.6U CN205159337U (zh) 2015-03-19 2015-11-23 齐纳二极管与电路
CN202010455022.2A CN111599871A (zh) 2015-03-19 2015-11-23 具有可调整击穿电压的齐纳二极管
CN201510818928.5A CN105990452B (zh) 2015-03-19 2015-11-23 具有可调整击穿电压的齐纳二极管
US14/963,670 US9577053B2 (en) 2015-03-19 2015-12-09 Zener diode having an adjustable breakdown voltage
US15/402,758 US9954119B2 (en) 2015-03-19 2017-01-10 Zener diode having an adjustable breakdown voltage

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1552290 2015-03-19
FR1552290A FR3033938B1 (fr) 2015-03-19 2015-03-19 Diode zener a tension de claquage ajustable

Publications (2)

Publication Number Publication Date
FR3033938A1 FR3033938A1 (fr) 2016-09-23
FR3033938B1 true FR3033938B1 (fr) 2018-04-27

Family

ID=54065955

Family Applications (1)

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FR1552290A Expired - Fee Related FR3033938B1 (fr) 2015-03-19 2015-03-19 Diode zener a tension de claquage ajustable

Country Status (3)

Country Link
US (2) US9577053B2 (fr)
CN (3) CN111599871A (fr)
FR (1) FR3033938B1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10845395B2 (en) 2018-02-08 2020-11-24 Honeywell International Inc. Intrinsically safe Zener diode barrier with indication
CN109192729A (zh) * 2018-08-31 2019-01-11 上海华虹宏力半导体制造有限公司 半导体结构及其形成方法
CN109994551B (zh) * 2019-03-26 2022-06-07 长江存储科技有限责任公司 高压mos器件
JP7368121B2 (ja) * 2019-06-20 2023-10-24 ローム株式会社 半導体装置および半導体装置の製造方法
CN117542899A (zh) * 2023-11-27 2024-02-09 遵义筑芯威半导体技术有限公司 一种稳压管芯片的结构和制作方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01232773A (ja) 1988-03-14 1989-09-18 Oki Electric Ind Co Ltd ツェナーダイオード
JPH03283470A (ja) 1990-03-29 1991-12-13 Nec Corp ツェナーダイオード
EP0612109A3 (fr) * 1993-02-16 1995-03-15 Bosch Gmbh Robert Dispositif intégré monolithiquement et procédé pour sa fabrication.
FR2776838B1 (fr) * 1998-03-26 2003-06-13 Sgs Thomson Microelectronics Procede de fabrication d'une diode de type zener a seuil variable
US7056761B1 (en) * 2003-03-14 2006-06-06 National Semiconductor Corporation Avalanche diode with breakdown voltage controlled by gate length
JP2007027449A (ja) * 2005-07-19 2007-02-01 Mitsubishi Electric Corp ツェナーダイオード
CN101752429B (zh) * 2008-12-09 2011-08-24 上海华虹Nec电子有限公司 高稳定性齐纳二极管及其制造方法
US8415765B2 (en) * 2009-03-31 2013-04-09 Panasonic Corporation Semiconductor device including a guard ring or an inverted region
US8198703B2 (en) * 2010-01-18 2012-06-12 Freescale Semiconductor, Inc. Zener diode with reduced substrate current
US9184255B2 (en) * 2011-09-30 2015-11-10 Infineon Technologies Austria Ag Diode with controllable breakdown voltage
JP5801713B2 (ja) * 2011-12-28 2015-10-28 株式会社ソシオネクスト 半導体装置とその製造方法、およびｃａｎシステム
US9018673B2 (en) * 2012-08-31 2015-04-28 Freescale Semiconductor Inc. Zener diode device and fabrication

Also Published As

Publication number Publication date
CN111599871A (zh) 2020-08-28
US20170148926A1 (en) 2017-05-25
CN205159337U (zh) 2016-04-13
FR3033938A1 (fr) 2016-09-23
US9954119B2 (en) 2018-04-24
US20160276447A1 (en) 2016-09-22
CN105990452B (zh) 2020-06-23
US9577053B2 (en) 2017-02-21
CN105990452A (zh) 2016-10-05

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