BR102012018610B8 - método para formar um transistor de efeito de campo metal-óxido-semicondutor (mosfet) vertical de carboneto de silício (sic) - Google Patents

método para formar um transistor de efeito de campo metal-óxido-semicondutor (mosfet) vertical de carboneto de silício (sic) Download PDF

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Publication number
BR102012018610B8
BR102012018610B8 BR102012018610A BR102012018610A BR102012018610B8 BR 102012018610 B8 BR102012018610 B8 BR 102012018610B8 BR 102012018610 A BR102012018610 A BR 102012018610A BR 102012018610 A BR102012018610 A BR 102012018610A BR 102012018610 B8 BR102012018610 B8 BR 102012018610B8
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BR
Brazil
Prior art keywords
mosfet
type
well
oxide
sic
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BR102012018610A
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English (en)
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BR102012018610B1 (pt
BR102012018610A2 (pt
Inventor
Mcmahon James
Matocha Kevin
Losee Peter
Sandvik Peter
Daley Arthur Stephen
Stum Zachary
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Gen Electric
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Publication of BR102012018610A2 publication Critical patent/BR102012018610A2/pt
Publication of BR102012018610B1 publication Critical patent/BR102012018610B1/pt
Publication of BR102012018610B8 publication Critical patent/BR102012018610B8/pt

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

método e dispositivo semicondutor. em uma modalidade, a invenção compreende um mosfet que compreende células mosfet individuais. cada célula compreende um poço em formato de u (228) (tipo p) e duas fontes paralelas (260) (tipo n) formadas dentro do poço. uma pluralidade de linhas de fonte (262) (n dopadas) conecta as fontes (260) em múltiplos locais. as regiões entre duas linhas (262) compreendem um corpo (252) (tipo p). estas características são formadas em uma camada epitaxial tipo n (220), que é formada em um substrato tipo n (216). um contato (290) se estende ao longo de, e entra em contato com uma pluralidade de linhas de fonte (262) e corpos (252). o óxido de porta e um contato de porta sobrepõem uma perna de um primeiro poço e uma perna de um segundo poço adjacente, que inverte a condutividade em resposta a uma tensão de porta. um mosfet compreende uma pluralidade destas células que obtém uma resistência de canal baixa desejada. as regiões de célula são formadas usando técnicas de auto-alinhamento em diversos estados do processo de fabricação.
BR102012018610A 2011-07-26 2012-07-26 método para formar um transistor de efeito de campo metal-óxido-semicondutor (mosfet) vertical de carboneto de silício (sic) BR102012018610B8 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/190,723 2011-07-26
US13/190,723 US8377756B1 (en) 2011-07-26 2011-07-26 Silicon-carbide MOSFET cell structure and method for forming same

Publications (3)

Publication Number Publication Date
BR102012018610A2 BR102012018610A2 (pt) 2013-11-26
BR102012018610B1 BR102012018610B1 (pt) 2020-02-11
BR102012018610B8 true BR102012018610B8 (pt) 2020-03-10

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BR102012018610A BR102012018610B8 (pt) 2011-07-26 2012-07-26 método para formar um transistor de efeito de campo metal-óxido-semicondutor (mosfet) vertical de carboneto de silício (sic)

Country Status (5)

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US (2) US8377756B1 (pt)
EP (1) EP2551912B1 (pt)
JP (1) JP6588685B2 (pt)
BR (1) BR102012018610B8 (pt)
CA (1) CA2783438C (pt)

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DE112014001741T8 (de) * 2013-03-29 2016-02-18 Fuji Electric Co., Ltd. Halbleitervorrichtung und Verfahren zum Herstellen der Halbleitervorrichtung
US9214572B2 (en) 2013-09-20 2015-12-15 Monolith Semiconductor Inc. High voltage MOSFET devices and methods of making the devices
US9991376B2 (en) 2013-09-20 2018-06-05 Monolith Semiconductor Inc. High voltage MOSFET devices and methods of making the devices
US9583482B2 (en) * 2015-02-11 2017-02-28 Monolith Semiconductor Inc. High voltage semiconductor devices and methods of making the devices
US10680067B2 (en) 2015-09-10 2020-06-09 Institute of Microelectronics, Chinese Academy of Sciences Silicon carbide MOSFET device and method for manufacturing the same
CN107452800B (zh) * 2016-05-24 2021-02-26 马克西姆综合产品公司 Ldmos晶体管及相关系统和方法
US11088272B2 (en) * 2017-01-25 2021-08-10 Rohm Co., Ltd. Semiconductor device
US10269951B2 (en) 2017-05-16 2019-04-23 General Electric Company Semiconductor device layout and method for forming same
US10497777B2 (en) * 2017-09-08 2019-12-03 Hestia Power Inc. Semiconductor power device
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US10784373B1 (en) * 2019-03-14 2020-09-22 Semiconductor Components Industries, Llc Insulated gated field effect transistor structure having shielded source and method
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Also Published As

Publication number Publication date
US8507986B2 (en) 2013-08-13
EP2551912A2 (en) 2013-01-30
BR102012018610B1 (pt) 2020-02-11
JP2013030774A (ja) 2013-02-07
CA2783438C (en) 2020-07-28
JP6588685B2 (ja) 2019-10-09
BR102012018610A2 (pt) 2013-11-26
EP2551912A3 (en) 2014-11-05
US20130026559A1 (en) 2013-01-31
CA2783438A1 (en) 2013-01-26
US20130126971A1 (en) 2013-05-23
EP2551912B1 (en) 2022-04-20
US8377756B1 (en) 2013-02-19

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B03A Publication of a patent application or of a certificate of addition of invention [chapter 3.1 patent gazette]
B03H Publication of an application: rectification [chapter 3.8 patent gazette]
B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B06U Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 26/07/2012, OBSERVADAS AS CONDICOES LEGAIS.

B16C Correction of notification of the grant [chapter 16.3 patent gazette]

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