BR102013019891A8 - método para fabricar um dispositivo semicondutor, dispositivos de transistor de efeito de campo de óxido de metal (mosfet) e semicondutor - Google Patents

método para fabricar um dispositivo semicondutor, dispositivos de transistor de efeito de campo de óxido de metal (mosfet) e semicondutor

Info

Publication number
BR102013019891A8
BR102013019891A8 BR102013019891A BR102013019891A BR102013019891A8 BR 102013019891 A8 BR102013019891 A8 BR 102013019891A8 BR 102013019891 A BR102013019891 A BR 102013019891A BR 102013019891 A BR102013019891 A BR 102013019891A BR 102013019891 A8 BR102013019891 A8 BR 102013019891A8
Authority
BR
Brazil
Prior art keywords
semiconductor device
manufacturing
mosfet
field effect
effect transistor
Prior art date
Application number
BR102013019891A
Other languages
English (en)
Other versions
BR102013019891A2 (pt
BR102013019891B1 (pt
Inventor
David Alan Lilienfeld
Joseph Darryl Michael
Stephen Daley Arthur
Tammy Lynn Johnson
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of BR102013019891A2 publication Critical patent/BR102013019891A2/pt
Publication of BR102013019891A8 publication Critical patent/BR102013019891A8/pt
Publication of BR102013019891B1 publication Critical patent/BR102013019891B1/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/048—Making electrodes
    • H01L21/0485—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

método para fabricar um dispositivo semicondutor, dispositivos de transistor de efeito de campo de óxido de metal (mosfet) e semicondutor. trata-se de um dispositivo semicondutor e métodos para fabricar esse dispositivo. em determinadas realizações, o dispositivo semicondutor inclui um eletrodo fonte formado com o uso de um metal que limita um deslocamento, tal como devido à instabilidade em temperatura e polarização, em uma tensão limite do dispositivo semicondutor durante a operação. em determinadas realizações o dispositivo semicondutor pode ser baseado em carboneto de silício
BR102013019891-9A 2012-08-06 2013-08-05 dispositivo de transistor de efeito de campo de óxido de metal (mosfet) BR102013019891B1 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/567,791 2012-08-06
US13/567,791 US9257283B2 (en) 2012-08-06 2012-08-06 Device having reduced bias temperature instability (BTI)

Publications (3)

Publication Number Publication Date
BR102013019891A2 BR102013019891A2 (pt) 2015-11-10
BR102013019891A8 true BR102013019891A8 (pt) 2015-12-08
BR102013019891B1 BR102013019891B1 (pt) 2020-12-01

Family

ID=48948276

Family Applications (1)

Application Number Title Priority Date Filing Date
BR102013019891-9A BR102013019891B1 (pt) 2012-08-06 2013-08-05 dispositivo de transistor de efeito de campo de óxido de metal (mosfet)

Country Status (6)

Country Link
US (1) US9257283B2 (pt)
EP (1) EP2696366B1 (pt)
JP (1) JP2014033200A (pt)
CN (1) CN103578933B (pt)
BR (1) BR102013019891B1 (pt)
CA (1) CA2822663C (pt)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10367089B2 (en) 2011-03-28 2019-07-30 General Electric Company Semiconductor device and method for reduced bias threshold instability
US9576868B2 (en) * 2012-07-30 2017-02-21 General Electric Company Semiconductor device and method for reduced bias temperature instability (BTI) in silicon carbide devices
JP6480860B2 (ja) * 2013-03-29 2019-03-13 富士電機株式会社 半導体装置および半導体装置の製造方法
US9035395B2 (en) 2013-04-04 2015-05-19 Monolith Semiconductor, Inc. Semiconductor devices comprising getter layers and methods of making and using the same
US8994118B2 (en) 2013-04-04 2015-03-31 Monolith Semiconductor, Inc. Semiconductor devices comprising getter layers and methods of making and using the same
US9425153B2 (en) * 2013-04-04 2016-08-23 Monolith Semiconductor Inc. Semiconductor devices comprising getter layers and methods of making and using the same
JP6582537B2 (ja) * 2015-05-13 2019-10-02 富士電機株式会社 半導体装置および半導体装置の製造方法
JP2017168602A (ja) * 2016-03-15 2017-09-21 富士電機株式会社 半導体装置および半導体装置の製造方法
JP6772495B2 (ja) * 2016-03-16 2020-10-21 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP7062946B2 (ja) 2017-12-25 2022-05-09 富士電機株式会社 半導体装置および半導体装置の製造方法

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5705830A (en) 1996-09-05 1998-01-06 Northrop Grumman Corporation Static induction transistors
JP3518486B2 (ja) * 2000-05-24 2004-04-12 トヨタ自動車株式会社 半導体装置及びその製造方法
US6759683B1 (en) 2001-08-27 2004-07-06 The United States Of America As Represented By The Secretary Of The Army Formulation and fabrication of an improved Ni based composite Ohmic contact to n-SiC for high temperature and high power device applications
JP3559971B2 (ja) * 2001-12-11 2004-09-02 日産自動車株式会社 炭化珪素半導体装置およびその製造方法
US6544853B1 (en) 2002-01-18 2003-04-08 Infineon Technologies Ag Reduction of negative bias temperature instability using fluorine implantation
JP4340040B2 (ja) 2002-03-28 2009-10-07 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
JP4405412B2 (ja) * 2005-03-02 2010-01-27 株式会社東芝 半導体集積回路
US7211679B2 (en) * 2005-03-09 2007-05-01 3M Innovative Properties Company Perfluoroether acyl oligothiophene compounds
JP2006269673A (ja) 2005-03-23 2006-10-05 Nec Electronics Corp 半導体装置およびその製造方法
JP2007096263A (ja) 2005-08-31 2007-04-12 Denso Corp 炭化珪素半導体装置およびその製造方法。
US7727904B2 (en) 2005-09-16 2010-06-01 Cree, Inc. Methods of forming SiC MOSFETs with high inversion layer mobility
US8093598B2 (en) * 2006-03-22 2012-01-10 Mitsubishi Electric Corporation Power semiconductor device
US7598567B2 (en) * 2006-11-03 2009-10-06 Cree, Inc. Power switching semiconductor devices including rectifying junction-shunts
JP2007201490A (ja) 2007-03-12 2007-08-09 Fujitsu Ltd 半導体装置
JP2008311260A (ja) * 2007-06-12 2008-12-25 Panasonic Corp 半導体装置の製造方法
JP2009016601A (ja) 2007-07-05 2009-01-22 Denso Corp 炭化珪素半導体装置
JP4365894B2 (ja) * 2007-08-07 2009-11-18 パナソニック株式会社 炭化珪素半導体素子の製造方法
JP2009094203A (ja) * 2007-10-05 2009-04-30 Denso Corp 炭化珪素半導体装置
US7982224B2 (en) * 2007-10-15 2011-07-19 Panasonic Corporation Semiconductor device with silicon carbide epitaxial layer including dopant profiles for reducing current overconcentration
JP5141227B2 (ja) * 2007-12-12 2013-02-13 住友電気工業株式会社 半導体装置の製造方法
JP5157026B2 (ja) * 2008-02-05 2013-03-06 セイコーエプソン株式会社 半導体膜の製造方法、半導体装置の製造方法、電子機器の製造方法、半導体膜、半導体装置および電子機器
DE112009000535B4 (de) * 2008-03-07 2013-08-01 Mitsubishi Electric Corp. Siliziumkarbid-Halbleitervorrichtung und Verfahren zu deren Herstellung
US7947588B2 (en) 2008-08-26 2011-05-24 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for a CMOS device with doped conducting metal oxide as the gate electrode
US8735906B2 (en) * 2009-04-13 2014-05-27 Rohm Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
WO2011055668A1 (en) * 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6008377B2 (ja) 2010-03-03 2016-10-19 ルネサスエレクトロニクス株式会社 Ｐチャネル型パワーｍｏｓｆｅｔ
JP5777455B2 (ja) * 2011-09-08 2015-09-09 株式会社東芝 半導体装置および半導体装置の製造方法

Also Published As

Publication number Publication date
EP2696366A2 (en) 2014-02-12
EP2696366A3 (en) 2014-11-12
BR102013019891A2 (pt) 2015-11-10
CN103578933A (zh) 2014-02-12
BR102013019891B1 (pt) 2020-12-01
EP2696366B1 (en) 2018-06-27
CA2822663C (en) 2020-09-01
CN103578933B (zh) 2018-03-30
US9257283B2 (en) 2016-02-09
JP2014033200A (ja) 2014-02-20
US20140034963A1 (en) 2014-02-06
CA2822663A1 (en) 2014-02-06

Similar Documents

Publication Publication Date Title
BR102013019891A8 (pt) método para fabricar um dispositivo semicondutor, dispositivos de transistor de efeito de campo de óxido de metal (mosfet) e semicondutor
BR102012018610B8 (pt) método para formar um transistor de efeito de campo metal-óxido-semicondutor (mosfet) vertical de carboneto de silício (sic)
BR112016002017A2 (pt) transistor de efeito de campo e método para produzir transistor de efeito de campo
TW201613098A (en) Semiconductor device
BR112017010750A2 (pt) estrutura envolvente de contato
WO2014172159A8 (en) Defective p-n junction for backgated fully depleted silicon on insulator mosfet
GB2571652A (en) Vertical transistors with merged active area regions
JP2016149552A5 (ja) 半導体装置及び電子機器
JP2014030000A5 (ja) 半導体装置
WO2015159183A3 (en) Semiconductor device and display device having the same
JP2013084941A5 (ja) 半導体装置
JP2013016785A5 (pt)
BR112013024192A2 (pt) dispositivo semicondutor e dispositivo de transistor de efeito de campo de óxido metálico
GB2529952A (en) Trigate transistor structure with unrecessed field insulator and thinner electrodes over the field insulator
TW201614848A (en) Field effect transistor and semiconductor device
GB2526460A (en) Nanowire transistor fabrication with hardmask layers
JP2013236068A5 (ja) 半導体装置
JP2011228689A5 (pt)
TW201232785A (en) Semiconductor device and method for manufacturing semiconductor device
GB2529955A (en) CMOS-compatible polycide fuse structure and method of fabricating same
GB2530675A (en) Integrated thermoelectric cooling
BR112016029690A2 (pt) material de interface térmica, e componente eletrônico
IN2014DN03274A (pt)
MX345306B (es) Formulaciones de refrigerante.
TW201614806A (en) Semiconductor structure

Legal Events

Date Code Title Description
B03A Publication of an application: publication of a patent application or of a certificate of addition of invention
B03H Publication of an application: rectification

Free format text: REFERENTE A RPI 2340 DE 10/11/2015, QUANTO AO ITEM (71).

B06F Objections, documents and/or translations needed after an examination request according art. 34 industrial property law
B06U Preliminary requirement: requests with searches performed by other patent offices: suspension of the patent application procedure
B09A Decision: intention to grant
B09W Decision of grant: rectification

Free format text: RETIFIQUE-SE, POR INCORRECOES NO NOME DO INVENTOR

B16A Patent or certificate of addition of invention granted

Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 05/08/2013, OBSERVADAS AS CONDICOES LEGAIS.