FR2980394B1 - Structure multicouche offrant une etancheite aux gaz amelioree - Google Patents

Structure multicouche offrant une etancheite aux gaz amelioree

Info

Publication number
FR2980394B1
FR2980394B1 FR1158570A FR1158570A FR2980394B1 FR 2980394 B1 FR2980394 B1 FR 2980394B1 FR 1158570 A FR1158570 A FR 1158570A FR 1158570 A FR1158570 A FR 1158570A FR 2980394 B1 FR2980394 B1 FR 2980394B1
Authority
FR
France
Prior art keywords
multilayer structure
providing improved
gas sealing
structure providing
improved gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1158570A
Other languages
English (en)
French (fr)
Other versions
FR2980394A1 (fr
Inventor
Stephane Cros
Nicole Alberola
Jean-Paul Garandet
Arnaud Morlier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1158570A priority Critical patent/FR2980394B1/fr
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to PCT/EP2012/068766 priority patent/WO2013045393A1/fr
Priority to US14/346,890 priority patent/US9771654B2/en
Priority to JP2014531264A priority patent/JP6124896B2/ja
Priority to CN201280058112.1A priority patent/CN103958734B/zh
Priority to KR1020147008430A priority patent/KR20140067079A/ko
Priority to EP12761635.7A priority patent/EP2761055B1/fr
Priority to BR112014007133A priority patent/BR112014007133A2/pt
Publication of FR2980394A1 publication Critical patent/FR2980394A1/fr
Application granted granted Critical
Publication of FR2980394B1 publication Critical patent/FR2980394B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/122—Inorganic polymers, e.g. silanes, polysilazanes, polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1212—Zeolites, glasses
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1225—Deposition of multilayers of inorganic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1694—Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/88—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/70—Other properties
    • B32B2307/724—Permeability to gases, adsorption
    • B32B2307/7242—Non-permeable
    • B32B2307/7244—Oxygen barrier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]
    • Y10T428/24967—Absolute thicknesses specified
    • Y10T428/24975—No layer or component greater than 5 mils thick

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Toxicology (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Laminated Bodies (AREA)
  • Silicon Compounds (AREA)
  • Chemically Coating (AREA)
  • Chemical Vapour Deposition (AREA)
FR1158570A 2011-09-26 2011-09-26 Structure multicouche offrant une etancheite aux gaz amelioree Expired - Fee Related FR2980394B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1158570A FR2980394B1 (fr) 2011-09-26 2011-09-26 Structure multicouche offrant une etancheite aux gaz amelioree
US14/346,890 US9771654B2 (en) 2011-09-26 2012-09-24 Multilayer structure offering improved impermeability to gases
JP2014531264A JP6124896B2 (ja) 2011-09-26 2012-09-24 改善されたガス不浸透性を与える多層構造体
CN201280058112.1A CN103958734B (zh) 2011-09-26 2012-09-24 提供不透气性改进的多层结构
PCT/EP2012/068766 WO2013045393A1 (fr) 2011-09-26 2012-09-24 Structure multicouche offrant une etancheite aux gaz amelioree
KR1020147008430A KR20140067079A (ko) 2011-09-26 2012-09-24 가스들에 대해 향상된 불투과성을 제공하는 다층 구조
EP12761635.7A EP2761055B1 (fr) 2011-09-26 2012-09-24 Structure multicouche offrant une etancheite aux gaz amelioree
BR112014007133A BR112014007133A2 (pt) 2011-09-26 2012-09-24 estrutura em multicamadas e processo de realização

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1158570A FR2980394B1 (fr) 2011-09-26 2011-09-26 Structure multicouche offrant une etancheite aux gaz amelioree

Publications (2)

Publication Number Publication Date
FR2980394A1 FR2980394A1 (fr) 2013-03-29
FR2980394B1 true FR2980394B1 (fr) 2013-10-18

Family

ID=46880737

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1158570A Expired - Fee Related FR2980394B1 (fr) 2011-09-26 2011-09-26 Structure multicouche offrant une etancheite aux gaz amelioree

Country Status (8)

Country Link
US (1) US9771654B2 (enExample)
EP (1) EP2761055B1 (enExample)
JP (1) JP6124896B2 (enExample)
KR (1) KR20140067079A (enExample)
CN (1) CN103958734B (enExample)
BR (1) BR112014007133A2 (enExample)
FR (1) FR2980394B1 (enExample)
WO (1) WO2013045393A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2988520B1 (fr) * 2012-03-23 2014-03-14 Arkema France Utilisation d'une structure multicouche a base de polymere halogene comme feuille de protection de module photovoltaique
FR2997763B1 (fr) 2012-11-06 2015-01-16 Commissariat Energie Atomique Dispositif et procede d'estimation d'un flux de gaz dans une enceinte maintenue en depression vis-a-vis du gaz
WO2017155808A1 (en) * 2016-03-07 2017-09-14 Sunedison Semiconductor Limited Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereof
JP6849083B2 (ja) * 2017-09-11 2021-03-24 東京エレクトロン株式会社 絶縁膜の成膜方法、基板処理装置及び基板処理システム
CN109821485B (zh) * 2019-04-11 2021-12-10 湖北科技学院 用于动力锂电池热调控的相变储热胶囊的制备方法

Family Cites Families (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5051308A (en) * 1987-08-24 1991-09-24 General Electric Company Abrasion-resistant plastic articles
US5472827A (en) * 1991-12-30 1995-12-05 Sony Corporation Method of forming a resist pattern using an anti-reflective layer
JP2526766B2 (ja) 1992-06-15 1996-08-21 東洋製罐株式会社 ガス遮断性積層プラスチックス材
JPH0792337A (ja) * 1993-09-27 1995-04-07 Hitachi Cable Ltd ポリマコア光導波路およびその製造方法
JPH07206410A (ja) 1994-01-17 1995-08-08 Toshiba Corp シリコン窒化膜の形成方法
US5846649A (en) * 1994-03-03 1998-12-08 Monsanto Company Highly durable and abrasion-resistant dielectric coatings for lenses
US5508368A (en) * 1994-03-03 1996-04-16 Diamonex, Incorporated Ion beam process for deposition of highly abrasion-resistant coatings
JP3414107B2 (ja) 1995-02-20 2003-06-09 株式会社日立製作所 半導体装置の製造方法
US6379014B1 (en) * 2000-04-27 2002-04-30 N & K Technology, Inc. Graded anti-reflective coatings for photolithography
JP5291275B2 (ja) * 2000-07-27 2013-09-18 有限会社コンタミネーション・コントロール・サービス コーティング膜が施された部材及びコーティング膜の製造方法
US6614977B2 (en) * 2001-07-12 2003-09-02 Little Optics, Inc. Use of deuterated gases for the vapor deposition of thin films for low-loss optical devices and waveguides
EP1329946A3 (en) * 2001-12-11 2005-04-06 Sel Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device including a laser crystallization step
JP4097947B2 (ja) * 2002-01-24 2008-06-11 住友ベークライト株式会社 透明水蒸気バリアフィルム
CN1195315C (zh) 2002-03-15 2005-03-30 台湾积体电路制造股份有限公司 多层式电介质抗反射层及其形成方法
US20030203210A1 (en) 2002-04-30 2003-10-30 Vitex Systems, Inc. Barrier coatings and methods of making same
US20070147766A1 (en) * 2003-11-12 2007-06-28 Mattsson Kent E Low loss silicon oxynitride optical waveguide, a method of its manufacture and an optical device
US8652625B2 (en) * 2004-09-21 2014-02-18 Konica Minolta Holdings, Inc. Transparent gas barrier film
JP2006133525A (ja) * 2004-11-05 2006-05-25 Canon Inc 電子写真感光体及びこれを用いた電子写真装置
DE112005002995B4 (de) * 2004-12-17 2010-03-04 The University Of Tokushima Verfahren zur Herstellung eines Substrats mit einer modifizierten Oberfläche und Substrat mit modifizierter Oberfläche
US8216684B2 (en) * 2005-02-01 2012-07-10 Mitsu Chemicals, Inc. Method for bonding members, composite film and use thereof
US20090029056A1 (en) * 2005-04-11 2009-01-29 Manfred Hoffmann Method for Improving the Barrier Characteristics of Ceramic Barrier Layers
JP4698310B2 (ja) * 2005-07-11 2011-06-08 富士フイルム株式会社 ガスバリア性フィルム、基材フィルムおよび有機エレクトロルミネッセンス素子
DE102005034817A1 (de) * 2005-07-26 2007-02-01 Clariant International Limited Verfahren zur Herstellung einer dünnen glasartigen Beschichtung auf Substraten zur Verringerung der Gaspermeation
JPWO2007018144A1 (ja) * 2005-08-10 2009-02-19 株式会社シンク・ラボラトリー ドクターブレード
JP2007237588A (ja) * 2006-03-09 2007-09-20 Kyodo Printing Co Ltd ガスバリア性フィルム及びその製造方法
US8586189B2 (en) * 2007-09-19 2013-11-19 Fujifilm Corporation Gas-barrier film and organic device comprising same
TWI493609B (zh) * 2007-10-23 2015-07-21 半導體能源研究所股份有限公司 半導體基板、顯示面板及顯示裝置的製造方法
JP2009133000A (ja) * 2007-10-30 2009-06-18 Fujifilm Corp シリコン窒化物膜及びそれを用いたガスバリア膜、薄膜素子
JP5405031B2 (ja) * 2008-03-06 2014-02-05 ＡｚエレクトロニックマテリアルズＩｐ株式会社 シリカ質膜の製造に用いる浸漬用溶液およびそれを用いたシリカ質膜の製造法
JP2009255040A (ja) * 2008-03-25 2009-11-05 Kyodo Printing Co Ltd フレキシブルガスバリアフィルムおよびその製造方法
US8673070B2 (en) * 2008-08-29 2014-03-18 National Institute Of Advanced Industrial Science And Technology Process for producing silicon oxide thin film or silicon oxynitride compound thin film and thin film obtained by the process
KR101040175B1 (ko) * 2008-12-11 2011-06-16 한국전자통신연구원 연성 기판 및 그의 제조 방법
EP2626378B1 (en) * 2009-03-17 2019-02-27 LINTEC Corporation Molded article, process for producing the molded article, member for electronic device, and electronic device
DE102009013904A1 (de) * 2009-03-19 2010-09-23 Clariant International Limited Solarzellen mit einer Verkapselungsschicht auf Basis von Polysilazan
CN102470637B (zh) * 2009-07-17 2016-04-06 三井化学株式会社 层合体及其制造方法
JP2011044453A (ja) * 2009-08-19 2011-03-03 Konica Minolta Holdings Inc 太陽電池用バックシート及び太陽電池モジュール
JP5585267B2 (ja) 2009-08-26 2014-09-10 コニカミノルタ株式会社 ガスバリア性フィルム、その製造方法、及びそれを用いた有機光電変換素子
JP5410207B2 (ja) * 2009-09-04 2014-02-05 ＡｚエレクトロニックマテリアルズＩｐ株式会社 シリカ質膜製造方法およびそれに用いるポリシラザン塗膜処理液
FR2949775B1 (fr) * 2009-09-10 2013-08-09 Saint Gobain Performance Plast Substrat de protection pour dispositif collecteur ou emetteur de rayonnement
JP5394867B2 (ja) * 2009-09-17 2014-01-22 富士フイルム株式会社 ガスバリア膜およびガスバリアフィルム
WO2011043315A1 (ja) * 2009-10-05 2011-04-14 コニカミノルタホールディングス株式会社 ガスバリア性フィルム、ガスバリア性フィルムの製造方法、該ガスバリア性フィルムを有する有機光電変換素子及び該有機光電変換素子を有する太陽電池
JP5849703B2 (ja) * 2009-11-19 2016-02-03 コニカミノルタ株式会社 ガスバリア性フィルムの製造方法、有機光電変換素子の製造方法及び有機エレクトロルミネッセンス素子の製造方法
JP5736644B2 (ja) * 2009-12-11 2015-06-17 コニカミノルタ株式会社 ガスバリア性フィルム、その製造方法及びそれを用いた有機光電変換素子
US8754407B2 (en) * 2009-12-14 2014-06-17 Konica Minolta Holdings, Inc. Gas barrier film, method of manufacturing gas barrier film, and organic photoelectric conversion element
FR2953990B1 (fr) 2009-12-14 2013-01-11 Commissariat Energie Atomique Dispositif d'encapsulation a etancheite amelioree
JP5381734B2 (ja) * 2010-01-14 2014-01-08 コニカミノルタ株式会社 バリア性フィルム及び有機電子デバイス
JP5445179B2 (ja) * 2010-02-01 2014-03-19 コニカミノルタ株式会社 ガスバリア性フィルム、ガスバリア性フィルムの製造方法、有機電子デバイス
JP5515847B2 (ja) * 2010-02-24 2014-06-11 コニカミノルタ株式会社 ガスバリアフィルムの製造方法
JP5447022B2 (ja) * 2010-03-11 2014-03-19 コニカミノルタ株式会社 ガスバリア性フィルム、その製造方法及びそのガスバリア性フィルムを用いた有機光電変換素子
JP2012004349A (ja) * 2010-06-17 2012-01-05 Az Electronic Materials Kk シリコンオキシナイトライド膜の形成方法およびそれにより製造されたシリコンオキシナイトライド膜付き基板
JP5540949B2 (ja) * 2010-07-07 2014-07-02 コニカミノルタ株式会社 ガスバリア性フィルム、及び有機光電変換素子、有機エレクトロルミネッセンス素子
JP5692230B2 (ja) * 2010-07-14 2015-04-01 コニカミノルタ株式会社 ガスバリアフィルムの製造方法
KR20120008360A (ko) * 2010-07-16 2012-01-30 삼성모바일디스플레이주식회사 플렉서블 디스플레이용 기판 및 그 제조 방법
JP5747915B2 (ja) * 2010-07-22 2015-07-15 コニカミノルタ株式会社 ガスバリアフィルムの製造方法
US9359505B2 (en) * 2010-07-27 2016-06-07 Konica Minolta Holdings, Inc. Gas barrier film, process for production of gas barrier film, and electronic device
WO2012026362A1 (ja) * 2010-08-25 2012-03-01 コニカミノルタホールディングス株式会社 ガスバリア性フィルムの製造方法及び有機光電変換素子
TWI457235B (zh) * 2010-09-21 2014-10-21 Lintec Corp A gas barrier film, a manufacturing method thereof, an electronic device element, and an electronic device
CN103237657A (zh) * 2010-12-06 2013-08-07 柯尼卡美能达株式会社 气体阻隔性膜、气体阻隔性膜的制造方法及电子器件
CN103269851B (zh) * 2010-12-27 2015-04-01 柯尼卡美能达株式会社 气体阻隔性膜及电子器件
EP2660042B1 (en) * 2010-12-27 2015-04-29 Konica Minolta, Inc. Method for manufacturing gas-barrier film, gas-barrier film, and electronic device
US20140127630A1 (en) * 2011-06-22 2014-05-08 Az Electronic Materials Usa Corp. Silicon oxynitride film formation method and substrate equipped with silicon oxynitride film formed thereby
JP5888329B2 (ja) * 2011-06-27 2016-03-22 コニカミノルタ株式会社 ガスバリア性フィルム、ガスバリア性フィルムの製造方法、および電子デバイス
WO2013035432A1 (ja) * 2011-09-08 2013-03-14 リンテック株式会社 変性ポリシラザンフィルム、および、ガスバリアフィルムの製造方法
WO2013077255A1 (ja) * 2011-11-24 2013-05-30 コニカミノルタ株式会社 ガスバリアーフィルム及び電子機器
JP5970197B2 (ja) * 2012-02-08 2016-08-17 メルクパフォーマンスマテリアルズマニュファクチャリング合同会社 無機ポリシラザン樹脂
JP6017256B2 (ja) * 2012-10-11 2016-10-26 メルクパフォーマンスマテリアルズマニュファクチャリング合同会社 ケイ素質緻密膜の形成方法
US20140117511A1 (en) * 2012-10-30 2014-05-01 Infineon Technologies Ag Passivation Layer and Method of Making a Passivation Layer

Also Published As

Publication number Publication date
CN103958734B (zh) 2016-12-21
JP2014528857A (ja) 2014-10-30
EP2761055B1 (fr) 2016-10-05
CN103958734A (zh) 2014-07-30
EP2761055A1 (fr) 2014-08-06
US9771654B2 (en) 2017-09-26
FR2980394A1 (fr) 2013-03-29
WO2013045393A1 (fr) 2013-04-04
KR20140067079A (ko) 2014-06-03
JP6124896B2 (ja) 2017-05-10
US20140234602A1 (en) 2014-08-21
BR112014007133A2 (pt) 2017-04-11

Similar Documents

Publication Publication Date Title
EP2610442A4 (en) GAS TURBINE
EP2418081A4 (en) MULTILAYER GASPERRFILM
EP2899381A4 (en) GAS ENGINE WITH VORKAMMER
EP2743680A4 (en) GAS ANALYZER
EP2772353A4 (en) GAS BARRIER FILM
EP2772670A4 (en) DRY GAS SEAL STRUCTURE
EP2695732A4 (en) GAS BARRIER FILM
EP2754554A4 (en) BARRIER FILM AGAINST GAS
EP2749409A4 (en) BARRIER LAMINATE AND GAS TRANSPARENT LAYER
EP2792482A4 (en) BARRIER FILM AGAINST GAS
EP2891582A4 (en) GAS GENERATOR
EP2844880A4 (en) SUPPORT STRUCTURE FOR A GAS TURBINE ENGINE
DK2896501T3 (da) Gasbarrierelaminat
EP2784325A4 (en) GAS COMPRESSOR
EP2896787A4 (en) GAS TURBINE
EP2840388A4 (en) GAS SENSOR
EP2730768A4 (en) GUEST BURST ARRANGEMENT FOR A LOCOMOTIVE
EP2625073A4 (en) GAS GENERATOR
EP2910754A4 (en) GAS ENGINE
EP2893125A4 (en) GAS LIFT VALVE
EP2844855A4 (en) DISTRIBUTOR FOR GAS TURBINE MOTOR
EP2918455A4 (en) GAS GENERATOR
EP2725282A4 (en) LPG TANK
EP2740594A4 (en) GAS BARRIER LAMINATE
EP2537577A4 (en) GAS SEPARATION COMPOSITE MEMBRANE

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 6

ST Notification of lapse

Effective date: 20180531