FR2967297B1 - Reduction de la formation d'oxyde sur une brasure - Google Patents

Reduction de la formation d'oxyde sur une brasure

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Publication number
FR2967297B1
FR2967297B1 FR1159998A FR1159998A FR2967297B1 FR 2967297 B1 FR2967297 B1 FR 2967297B1 FR 1159998 A FR1159998 A FR 1159998A FR 1159998 A FR1159998 A FR 1159998A FR 2967297 B1 FR2967297 B1 FR 2967297B1
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France
Prior art keywords
brasure
reduction
oxide formation
oxide
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1159998A
Other languages
English (en)
Other versions
FR2967297A1 (fr
Inventor
Buu Diep
Thomas A Kocian
Roland W Gooch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
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Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of FR2967297A1 publication Critical patent/FR2967297A1/fr
Application granted granted Critical
Publication of FR2967297B1 publication Critical patent/FR2967297B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
    • B23K1/206—Cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/008—Soldering within a furnace
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)
  • Manufacturing Of Printed Wiring (AREA)
FR1159998A 2010-11-05 2011-11-04 Reduction de la formation d'oxyde sur une brasure Active FR2967297B1 (fr)

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5442394B2 (ja) * 2009-10-29 2014-03-12 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
US8844793B2 (en) 2010-11-05 2014-09-30 Raytheon Company Reducing formation of oxide on solder
JP2013074093A (ja) * 2011-09-28 2013-04-22 Renesas Electronics Corp リフロー前処理装置およびリフロー前処理方法
AT517742A5 (de) * 2012-05-30 2017-04-15 Ev Group E Thallner Gmbh Vorrichtung und Verfahren zum Bonden von Substraten
JP6045610B2 (ja) * 2013-01-24 2016-12-14 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
CN104425289B (zh) * 2013-09-11 2017-12-15 先进科技新加坡有限公司 利用激发的混合气体的晶粒安装装置和方法
CN110098138B (zh) * 2013-09-25 2023-07-18 Ev 集团 E·索尔纳有限责任公司 用于结合基板的装置及方法
US9570321B1 (en) 2015-10-20 2017-02-14 Raytheon Company Use of an external getter to reduce package pressure
JP6673268B2 (ja) * 2017-03-14 2020-03-25 オムロン株式会社 管理装置、管理装置の制御方法、情報処理プログラム、および記録媒体
JP6538894B2 (ja) * 2018-01-10 2019-07-03 エーファウ・グループ・エー・タルナー・ゲーエムベーハー 基板同士をボンディングする方法

Family Cites Families (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU1177097A1 (ru) * 1982-12-24 1985-09-07 Inst Elektroniki An Bssr "cпocoб пaйkи иhteгpaльhыx mиkpocxem"
JPS63293952A (ja) 1987-05-27 1988-11-30 Hitachi Ltd 半導体素子接続端子形成方法
JPH02253626A (ja) * 1989-03-27 1990-10-12 Shimadzu Corp 半導体チップの実装方法
DE4032328A1 (de) * 1989-11-06 1991-09-19 Wls Karl Heinz Grasmann Weichl Verfahren und vorrichtung zur verarbeitung von zu verloetenden fuegepartnern
DE4041270A1 (de) * 1990-12-21 1992-06-25 Grasmann Karl Heinz Wls Verfahren und vorrichtung zur verarbeitung von elektronischen flachbaugruppen, insbesondere mit bauelementen bestueckten leiterplatten
JP2827558B2 (ja) * 1991-04-09 1998-11-25 松下電器産業株式会社 ワイヤボンディング装置およびワイヤボンディング方法
US5223691A (en) * 1991-06-03 1993-06-29 Motorola, Inc. Plasma based soldering method requiring no additional heat sources or flux
DE4225378A1 (de) * 1992-03-20 1993-09-23 Linde Ag Verfahren zum verloeten von leiterplatten unter niederdruck
JP3206142B2 (ja) * 1992-10-15 2001-09-04 松下電器産業株式会社 ワイヤボンディング装置及びワイヤボンディング方法
US5403459A (en) * 1993-05-17 1995-04-04 Applied Materials, Inc. Cleaning of a PVD chamber containing a collimator
JP3189828B2 (ja) * 1995-11-24 2001-07-16 松下電器産業株式会社 回路モジュールの製造方法
JP3201302B2 (ja) * 1997-02-10 2001-08-20 松下電器産業株式会社 基板のプラズマクリーニング装置
US5843239A (en) * 1997-03-03 1998-12-01 Applied Materials, Inc. Two-step process for cleaning a substrate processing chamber
JPH11163036A (ja) 1997-09-17 1999-06-18 Tamura Seisakusho Co Ltd バンプ形成方法、はんだ接合用前処理方法、はんだ接合方法、バンプ形成装置、はんだ接合用前処理装置およびはんだ接合装置
US20060258176A1 (en) * 1998-02-05 2006-11-16 Asm Japan K.K. Method for forming insulation film
US6230719B1 (en) * 1998-02-27 2001-05-15 Micron Technology, Inc. Apparatus for removing contaminants on electronic devices
US6742701B2 (en) 1998-09-17 2004-06-01 Kabushiki Kaisha Tamura Seisakusho Bump forming method, presoldering treatment method, soldering method, bump forming apparatus, presoldering treatment device and soldering apparatus
JP3400408B2 (ja) 2000-04-25 2003-04-28 株式会社タムラ製作所 フリップチップ実装方法
US20020011205A1 (en) * 2000-05-02 2002-01-31 Shunpei Yamazaki Film-forming apparatus, method of cleaning the same, and method of manufacturing a light-emitting device
JP3922870B2 (ja) 2000-08-04 2007-05-30 東レエンジニアリング株式会社 実装方法
JP4016598B2 (ja) * 2001-01-16 2007-12-05 株式会社日立製作所 半導体装置の製造方法
JP4027072B2 (ja) * 2001-10-18 2007-12-26 松下電器産業株式会社 減圧プラズマ処理装置及びその方法
US6756560B2 (en) * 2001-11-19 2004-06-29 Geomat Insights, L.L.C. Plasma enhanced circuit component attach method and device
TWI289491B (en) 2002-04-16 2007-11-11 Tadatomo Suga Reflow soldering method
JP2003318220A (ja) 2002-04-26 2003-11-07 Toray Eng Co Ltd 実装方法および実装装置
JP4233802B2 (ja) * 2002-04-26 2009-03-04 東レエンジニアリング株式会社 実装方法および実装装置
JP2004119430A (ja) * 2002-09-24 2004-04-15 Tadatomo Suga 接合装置および方法
KR100521081B1 (ko) 2002-10-12 2005-10-14 삼성전자주식회사 플립 칩의 제조 및 실장 방법
US7387738B2 (en) 2003-04-28 2008-06-17 Air Products And Chemicals, Inc. Removal of surface oxides by electron attachment for wafer bumping applications
JP3980539B2 (ja) * 2003-08-29 2007-09-26 唯知 須賀 基板接合方法、照射方法、および基板接合装置
US7645681B2 (en) * 2003-12-02 2010-01-12 Bondtech, Inc. Bonding method, device produced by this method, and bonding device
JP4919604B2 (ja) * 2004-02-16 2012-04-18 ボンドテック株式会社 接合方法及び接合装置
US7611322B2 (en) * 2004-11-18 2009-11-03 Intevac, Inc. Processing thin wafers
JP2006222381A (ja) 2005-02-14 2006-08-24 Olympus Corp 電子部品の実装方法及びその製造装置
JP4577130B2 (ja) 2005-07-15 2010-11-10 ソニー株式会社 半導体装置の製造方法
JP4742844B2 (ja) 2005-12-15 2011-08-10 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP4671900B2 (ja) * 2006-04-06 2011-04-20 パナソニック株式会社 接合方法および接合装置
JP2006279062A (ja) 2006-05-25 2006-10-12 Nec Corp 半導体素子および半導体装置
JP4783222B2 (ja) * 2006-06-28 2011-09-28 株式会社ケミトロニクス 接合装置
FR2911003B1 (fr) * 2006-12-28 2009-10-02 Cnes Epic Procede et installation de mise a nu de la surface d'un circuit integre
KR100893182B1 (ko) * 2007-06-01 2009-04-15 주식회사 엘트린 웨이퍼 세정방법
US20120132522A1 (en) * 2007-07-19 2012-05-31 Innovative Micro Technology Deposition/bonding chamber for encapsulated microdevices and method of use
WO2009014195A1 (fr) 2007-07-24 2009-01-29 Sumitomo Chemical Company, Limited Dispositif semi-conducteur, procédé de fabrication de dispositif semi-conducteur, transistor à mobilité de porteurs élevée et dispositif émettant de la lumière
JP2009094115A (ja) * 2007-10-04 2009-04-30 Hitachi Kokusai Electric Inc 半導体装置の製造方法
JP5181158B2 (ja) 2007-10-24 2013-04-10 ボンドテック株式会社 接合方法およびこの方法により作成されるデバイス並びに接合装置
JP4369507B2 (ja) * 2007-12-07 2009-11-25 株式会社新川 ボンディング装置及びボンディング方法
JP5297048B2 (ja) * 2008-01-28 2013-09-25 三菱重工業株式会社 プラズマ処理方法及びプラズマ処理装置
US8048723B2 (en) 2008-12-05 2011-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Germanium FinFETs having dielectric punch-through stoppers
US8622261B2 (en) * 2008-08-14 2014-01-07 Hitachi Metals, Ltd. Molten metal supply cylinder, molten metal supply apparatus incorporating such a supply cylinder and molten metal supply method
FR2961630B1 (fr) * 2010-06-22 2013-03-29 Soitec Silicon On Insulator Technologies Appareil de fabrication de dispositifs semi-conducteurs
JP2012009597A (ja) 2010-06-24 2012-01-12 Elpida Memory Inc 半導体デバイスの製造方法および半導体デバイスの製造装置
CA2719927C (fr) * 2010-11-05 2014-04-29 Ibm Canada Limited - Ibm Canada Limitee Calcination au laser de polyimide pour la production de semiconducteurs
US8844793B2 (en) 2010-11-05 2014-09-30 Raytheon Company Reducing formation of oxide on solder
US20120237693A1 (en) * 2011-03-17 2012-09-20 Applied Materials, Inc. In-situ clean process for metal deposition chambers
KR20140023807A (ko) * 2012-08-17 2014-02-27 삼성전자주식회사 반도체 소자를 제조하는 설비

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JP6157799B2 (ja) 2017-07-05
US20120111925A1 (en) 2012-05-10
DE102011116233A1 (de) 2012-05-10
IL215681A0 (en) 2012-02-29
DE102011116233B4 (de) 2022-12-08
IL215681A (en) 2016-07-31
FR2967297A1 (fr) 2012-05-11
JP2012104817A (ja) 2012-05-31
TW201227843A (en) 2012-07-01
US9132496B2 (en) 2015-09-15
TWI541909B (zh) 2016-07-11
US8844793B2 (en) 2014-09-30

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