AT517742A5 - Vorrichtung und Verfahren zum Bonden von Substraten - Google Patents

Vorrichtung und Verfahren zum Bonden von Substraten

Info

Publication number
AT517742A5
AT517742A5 ATA9523/2012A AT95232012A AT517742A5 AT 517742 A5 AT517742 A5 AT 517742A5 AT 95232012 A AT95232012 A AT 95232012A AT 517742 A5 AT517742 A5 AT 517742A5
Authority
AT
Austria
Prior art keywords
bonding
module
substrate
working space
module group
Prior art date
Application number
ATA9523/2012A
Other languages
English (en)
Inventor
Rebhan Bernhard
Original Assignee
Ev Group E Thallner Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ev Group E Thallner Gmbh filed Critical Ev Group E Thallner Gmbh
Priority to ATGM8038/2019U priority Critical patent/AT16645U1/de
Publication of AT517742A5 publication Critical patent/AT517742A5/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/24—Preliminary treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/26—Auxiliary equipment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K31/00—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups
    • B23K31/02—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups relating to soldering or welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/14—Preventing or minimising gas access, or using protective gases or vacuum during welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/751—Means for controlling the bonding environment, e.g. valves, vacuum pumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757—Means for aligning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/758—Means for moving parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81053—Bonding environment
    • H01L2224/81054—Composition of the atmosphere
    • H01L2224/81065—Composition of the atmosphere being reducing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83053—Bonding environment
    • H01L2224/83054—Composition of the atmosphere
    • H01L2224/83065—Composition of the atmosphere being reducing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83053—Bonding environment
    • H01L2224/83054—Composition of the atmosphere
    • H01L2224/83075—Composition of the atmosphere being inert
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Die Bonding (AREA)
  • Combinations Of Printed Boards (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

Die Erfindung betrifft eine Vorrichtung zum Bonden einer Bondseite eines ersten Substrats mit einer Bondseite eines zweiten Substrats mit folgenden Merkmalen: einer Modulgruppe (9) mit einem zur Umgebung, insbesondere gasdicht, schließbaren gemeinsamen Arbeitsraum, mindestens einem an den Arbeitsraum, insbesondere dichtend, angeschlossenen Bondmodul (5) der Modulgruppe (9), einer Bewegungseinrichtung zur Bewegung des ersten und zweiten Substrats im Arbeitsraum dadurch gekennzeichnet, dass die Modulgruppe (9) ein an den Arbeitsraum, insbesondere dichtend, angeschlossenes Reduktionsmodul ( 4) zur Reduzierung der Bondseiten aufweist. Weiterhin betrifft die Erfindung ein korrespondierendes Verfahren mit folgendem Ablauf: Reduzierung der Bondseiten in einem an den Arbeitsraum angeschlossenen Reduktionsmodul der Modulgruppe (9), Bewegung des ersten und zweiten Substrats im Arbeitsraum von dem Reduktionsmodul in einem Bondraum eines Bondmoduls (5) der Modulgruppe (9) und Bonden des ersten Substrats mit dem zweiten Substrat an den Bondseiten.
ATA9523/2012A 2012-05-30 2012-05-30 Vorrichtung und Verfahren zum Bonden von Substraten AT517742A5 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
ATGM8038/2019U AT16645U1 (de) 2012-05-30 2012-05-30 Vorrichtung und Verfahren zum Bonden von Substraten

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2012/060171 WO2013178260A1 (de) 2012-05-30 2012-05-30 Vorrichtung und verfahren zum bonden von substraten

Publications (1)

Publication Number Publication Date
AT517742A5 true AT517742A5 (de) 2017-04-15

Family

ID=46201635

Family Applications (2)

Application Number Title Priority Date Filing Date
ATA9523/2012A AT517742A5 (de) 2012-05-30 2012-05-30 Vorrichtung und Verfahren zum Bonden von Substraten
ATGM8038/2019U AT16645U1 (de) 2012-05-30 2012-05-30 Vorrichtung und Verfahren zum Bonden von Substraten

Family Applications After (1)

Application Number Title Priority Date Filing Date
ATGM8038/2019U AT16645U1 (de) 2012-05-30 2012-05-30 Vorrichtung und Verfahren zum Bonden von Substraten

Country Status (9)

Country Link
US (1) US9443820B2 (de)
JP (1) JP2015525468A (de)
KR (1) KR101889590B1 (de)
CN (1) CN104395999B (de)
AT (2) AT517742A5 (de)
DE (1) DE112012005906A5 (de)
SG (1) SG2014013015A (de)
TW (1) TWI604536B (de)
WO (1) WO2013178260A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI608573B (zh) * 2016-10-27 2017-12-11 Crystalwise Tech Inc Composite substrate bonding method
TWI797461B (zh) * 2019-07-26 2023-04-01 日商新川股份有限公司 封裝裝置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007105786A (ja) * 2005-10-17 2007-04-26 Tokyo Electron Ltd 金属部材の処理方法
US20070170227A1 (en) * 2004-02-17 2007-07-26 Yasuhide Ohno Soldering method
US20110045653A1 (en) * 2008-05-02 2011-02-24 Yasuhide Ohno Bonding method and bonding apparatus
US20120111925A1 (en) * 2010-11-05 2012-05-10 Raytheon Company Reducing Formation Of Oxide On Solder

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US6230719B1 (en) * 1998-02-27 2001-05-15 Micron Technology, Inc. Apparatus for removing contaminants on electronic devices
JP2000150836A (ja) * 1998-11-06 2000-05-30 Canon Inc 試料の処理システム
JP2002184847A (ja) * 2000-12-19 2002-06-28 Nec Kansai Ltd 貼付装置
JP4937459B2 (ja) 2001-04-06 2012-05-23 東京エレクトロン株式会社 クラスタツールおよび搬送制御方法
JP2002324829A (ja) * 2001-07-13 2002-11-08 Tokyo Electron Ltd 処理システム
JP2004006707A (ja) 2002-04-26 2004-01-08 Toray Eng Co Ltd 実装方法および実装装置
KR100500169B1 (ko) * 2003-07-02 2005-07-07 주식회사 디엠에스 도킹형 기판 이송 및 처리 시스템과, 그를 이용한 이송 및 처리 방법
US20070269297A1 (en) 2003-11-10 2007-11-22 Meulen Peter V D Semiconductor wafer handling and transport
JP2006181641A (ja) * 2004-12-02 2006-07-13 Ebara Corp 接合装置及び接合方法
US7682979B2 (en) * 2006-06-29 2010-03-23 Lam Research Corporation Phase change alloy etch
JP2008244059A (ja) * 2007-03-27 2008-10-09 Renesas Technology Corp 半導体装置の製造方法
JP5196467B2 (ja) * 2007-05-30 2013-05-15 東京エレクトロン株式会社 半導体装置の製造方法、半導体製造装置及び記憶媒体
JP4992604B2 (ja) * 2007-08-15 2012-08-08 株式会社ニコン 接合装置、接合方法
JP5447110B2 (ja) * 2010-04-06 2014-03-19 株式会社ニコン 基板貼り合わせ装置、積層半導体の製造方法、積層半導体及び基板貼り合わせ方法
JP6014302B2 (ja) * 2010-09-06 2016-10-25 東京応化工業株式会社 貼り合わせ装置および貼り合わせ方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070170227A1 (en) * 2004-02-17 2007-07-26 Yasuhide Ohno Soldering method
JP2007105786A (ja) * 2005-10-17 2007-04-26 Tokyo Electron Ltd 金属部材の処理方法
US20110045653A1 (en) * 2008-05-02 2011-02-24 Yasuhide Ohno Bonding method and bonding apparatus
US20120111925A1 (en) * 2010-11-05 2012-05-10 Raytheon Company Reducing Formation Of Oxide On Solder

Also Published As

Publication number Publication date
US20150069115A1 (en) 2015-03-12
CN104395999B (zh) 2017-03-08
KR20150023224A (ko) 2015-03-05
AT16645U1 (de) 2020-04-15
SG2014013015A (en) 2014-08-28
US9443820B2 (en) 2016-09-13
CN104395999A (zh) 2015-03-04
WO2013178260A1 (de) 2013-12-05
KR101889590B1 (ko) 2018-08-17
TWI604536B (zh) 2017-11-01
TW201401385A (zh) 2014-01-01
DE112012005906A5 (de) 2014-10-30
JP2015525468A (ja) 2015-09-03

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