FR2852102B1 - Capteur de pression a semiconducteur ayant une membrane - Google Patents

Capteur de pression a semiconducteur ayant une membrane

Info

Publication number
FR2852102B1
FR2852102B1 FR0402282A FR0402282A FR2852102B1 FR 2852102 B1 FR2852102 B1 FR 2852102B1 FR 0402282 A FR0402282 A FR 0402282A FR 0402282 A FR0402282 A FR 0402282A FR 2852102 B1 FR2852102 B1 FR 2852102B1
Authority
FR
France
Prior art keywords
membrane
pressure sensor
semiconductor pressure
semiconductor
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0402282A
Other languages
English (en)
Other versions
FR2852102A1 (fr
Inventor
Takashi Katsumata
Inao Toyoda
Hiroaki Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Publication of FR2852102A1 publication Critical patent/FR2852102A1/fr
Application granted granted Critical
Publication of FR2852102B1 publication Critical patent/FR2852102B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2268—Arrangements for correcting or for compensating unwanted effects
    • G01L1/2281—Arrangements for correcting or for compensating unwanted effects for temperature variations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65F—GATHERING OR REMOVAL OF DOMESTIC OR LIKE REFUSE
    • B65F1/00—Refuse receptacles; Accessories therefor
    • B65F1/0033—Refuse receptacles; Accessories therefor specially adapted for segregated refuse collecting, e.g. receptacles with several compartments; Combination of receptacles
    • B65F1/0053—Combination of several receptacles
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
    • G01L9/065—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices with temperature compensating means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65F—GATHERING OR REMOVAL OF DOMESTIC OR LIKE REFUSE
    • B65F2210/00—Equipment of refuse receptacles
    • B65F2210/18—Suspending means

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
FR0402282A 2003-03-07 2004-03-04 Capteur de pression a semiconducteur ayant une membrane Expired - Fee Related FR2852102B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003061584A JP3915715B2 (ja) 2003-03-07 2003-03-07 半導体圧力センサ

Publications (2)

Publication Number Publication Date
FR2852102A1 FR2852102A1 (fr) 2004-09-10
FR2852102B1 true FR2852102B1 (fr) 2006-12-15

Family

ID=32866673

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0402282A Expired - Fee Related FR2852102B1 (fr) 2003-03-07 2004-03-04 Capteur de pression a semiconducteur ayant une membrane

Country Status (6)

Country Link
US (1) US6973836B2 (fr)
JP (1) JP3915715B2 (fr)
KR (1) KR100741520B1 (fr)
CN (1) CN1287134C (fr)
DE (1) DE102004010670B4 (fr)
FR (1) FR2852102B1 (fr)

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JP4511844B2 (ja) * 2004-02-05 2010-07-28 横河電機株式会社 圧力センサ及び圧力センサの製造方法
JP2006220574A (ja) * 2005-02-14 2006-08-24 Hitachi Ltd 回転体力学量測定装置および回転体力学量計測システム
US7260996B2 (en) * 2005-12-12 2007-08-28 Signal Electronic Co., Ltd. Pressure measuring apparatus and pressure sensor thereof
KR100773759B1 (ko) * 2006-03-27 2007-11-09 한국기계연구원 마이크로 압력센서
TWI416739B (zh) * 2006-05-01 2013-11-21 Tanita Seisakusho Kk 半導體型應變檢測器及其製造方法
JP2008039760A (ja) * 2006-07-14 2008-02-21 Denso Corp 圧力センサ
JP4710779B2 (ja) * 2006-09-28 2011-06-29 株式会社日立製作所 力学量計測装置
JP5268189B2 (ja) * 2008-12-11 2013-08-21 日本特殊陶業株式会社 圧力センサ
JP5658477B2 (ja) * 2010-04-13 2015-01-28 アズビル株式会社 圧力センサ
JP2011220927A (ja) * 2010-04-13 2011-11-04 Yamatake Corp 圧力センサ
KR101222045B1 (ko) 2011-05-11 2013-01-15 세종공업 주식회사 압력측정장치
WO2013057689A1 (fr) 2011-10-21 2013-04-25 Ecole Polytechnique Federale De Lausanne (Epfl) Transducteur de pression haute température sic
US9562820B2 (en) 2013-02-28 2017-02-07 Mks Instruments, Inc. Pressure sensor with real time health monitoring and compensation
US10317297B2 (en) 2013-12-11 2019-06-11 Melexis Technologies Nv Semiconductor pressure sensor
EP3032235B1 (fr) * 2014-12-10 2017-09-20 Melexis Technologies NV Capteur de pression à semi-conducteur
JP6158846B2 (ja) * 2015-02-17 2017-07-05 トヨタ自動車株式会社 圧力センサ
US10107873B2 (en) * 2016-03-10 2018-10-23 Allegro Microsystems, Llc Electronic circuit for compensating a sensitivity drift of a hall effect element due to stress
EP3236226B1 (fr) * 2016-04-20 2019-07-24 Sensata Technologies, Inc. Procédé de fabrication d'un capteur de pression
CN106017751B (zh) * 2016-05-25 2018-08-10 东南大学 一种高灵敏度压阻式压力传感器及其制备方法
US10162017B2 (en) 2016-07-12 2018-12-25 Allegro Microsystems, Llc Systems and methods for reducing high order hall plate sensitivity temperature coefficients
KR20180066297A (ko) * 2016-12-07 2018-06-19 스마트전자 주식회사 압력센서
KR101806490B1 (ko) * 2016-12-26 2017-12-07 주식회사 현대케피코 센서 엘리먼트
US10352792B2 (en) * 2017-02-15 2019-07-16 Texas Instruments Incorporated Device and method for on-chip mechanical stress sensing
CN108538833B (zh) * 2017-03-01 2021-04-02 中芯国际集成电路制造(上海)有限公司 电阻器结构、半导体器件及其形成方法
CN106946211A (zh) * 2017-04-28 2017-07-14 华南理工大学 一种梁膜机构的微机电系统压力传感器芯片及其制备方法
US10520559B2 (en) 2017-08-14 2019-12-31 Allegro Microsystems, Llc Arrangements for Hall effect elements and vertical epi resistors upon a substrate
CN107976266A (zh) * 2017-11-23 2018-05-01 蚌埠市勇创机械电子有限公司 一种压力放大传感器
WO2020084902A1 (fr) * 2018-10-26 2020-04-30 富士電機株式会社 Capteur de pression
CN209326840U (zh) 2018-12-27 2019-08-30 热敏碟公司 压力传感器及压力变送器
CN115210892A (zh) * 2020-03-19 2022-10-18 深圳纽迪瑞科技开发有限公司 一种压力感应装置及压力感应设备
US12013304B2 (en) * 2020-07-27 2024-06-18 Precision Biomems Corporation Electronic force and pressure sensor devices having flexible layers
US11650110B2 (en) * 2020-11-04 2023-05-16 Honeywell International Inc. Rosette piezo-resistive gauge circuit for thermally compensated measurement of full stress tensor

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JPS5322385A (en) * 1976-08-13 1978-03-01 Hitachi Ltd Diffusion type semiconductor pr essure receiving element
US4777826A (en) * 1985-06-20 1988-10-18 Rosemount Inc. Twin film strain gauge system
JPH0691265B2 (ja) * 1986-08-01 1994-11-14 株式会社日立製作所 半導体圧力センサ
US5167158A (en) * 1987-10-07 1992-12-01 Kabushiki Kaisha Komatsu Seisakusho Semiconductor film pressure sensor and method of manufacturing same
US5097841A (en) * 1988-09-22 1992-03-24 Terumo Kabushiki Kaisha Disposable pressure transducer and disposable pressure transducer apparatus
WO1990003664A1 (fr) * 1988-09-30 1990-04-05 Kabushiki Kaisha Komatsu Seisakusho Capteur de pression
US5289721A (en) * 1990-09-10 1994-03-01 Nippondenso Co., Ltd. Semiconductor pressure sensor
US5253532A (en) * 1992-03-09 1993-10-19 Timex Corporation Temperature compensated pressure transducer with digital output for low voltage power supply
JPH05256716A (ja) * 1992-03-13 1993-10-05 Mitsubishi Electric Corp 半導体装置
JPH06296032A (ja) * 1993-04-09 1994-10-21 Riken Corp 力変換素子
US5343755A (en) * 1993-05-05 1994-09-06 Rosemount Inc. Strain gage sensor with integral temperature signal
US5614678A (en) 1996-02-05 1997-03-25 Kulite Semiconductor Products, Inc. High pressure piezoresistive transducer
JP3359493B2 (ja) * 1996-05-14 2002-12-24 株式会社山武 半導体圧力変換器
DE19701055B4 (de) * 1997-01-15 2016-04-28 Robert Bosch Gmbh Halbleiter-Drucksensor
JP4161410B2 (ja) 1997-07-25 2008-10-08 株式会社デンソー 圧力検出装置
US6422088B1 (en) * 1999-09-24 2002-07-23 Denso Corporation Sensor failure or abnormality detecting system incorporated in a physical or dynamic quantity detecting apparatus
JP4438193B2 (ja) * 1999-09-24 2010-03-24 株式会社デンソー 圧力センサ
US6700473B2 (en) * 2000-02-14 2004-03-02 Kulite Semiconductor Products, Inc. Pressure transducer employing on-chip resistor compensation
US6601452B2 (en) * 2000-06-05 2003-08-05 Denso Corporation Semiconductor pressure sensor having rounded corner portion of diaphragm
JP2002340713A (ja) * 2001-05-10 2002-11-27 Denso Corp 半導体圧力センサ

Also Published As

Publication number Publication date
KR20040079323A (ko) 2004-09-14
FR2852102A1 (fr) 2004-09-10
JP3915715B2 (ja) 2007-05-16
CN1527039A (zh) 2004-09-08
US6973836B2 (en) 2005-12-13
DE102004010670B4 (de) 2012-07-12
DE102004010670A1 (de) 2004-09-16
JP2004271315A (ja) 2004-09-30
KR100741520B1 (ko) 2007-07-20
CN1287134C (zh) 2006-11-29
US20040173027A1 (en) 2004-09-09

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Effective date: 20151130