FR2874908B1 - Element de capteur comportant une cavite avec des tranchees - Google Patents

Element de capteur comportant une cavite avec des tranchees

Info

Publication number
FR2874908B1
FR2874908B1 FR0552684A FR0552684A FR2874908B1 FR 2874908 B1 FR2874908 B1 FR 2874908B1 FR 0552684 A FR0552684 A FR 0552684A FR 0552684 A FR0552684 A FR 0552684A FR 2874908 B1 FR2874908 B1 FR 2874908B1
Authority
FR
France
Prior art keywords
trenches
cavity
sensor element
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0552684A
Other languages
English (en)
Other versions
FR2874908A1 (fr
Inventor
Hubert Benzel
Stefan Finkbeiner
Matthias Illing
Frank Schaefer
Simon Armbruster
Gerhard Lammel
Christoph Schelling
Joerg Brasas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of FR2874908A1 publication Critical patent/FR2874908A1/fr
Application granted granted Critical
Publication of FR2874908B1 publication Critical patent/FR2874908B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G01L9/0045—Diaphragm associated with a buried cavity
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00182—Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0315—Cavities
FR0552684A 2004-09-08 2005-09-06 Element de capteur comportant une cavite avec des tranchees Expired - Fee Related FR2874908B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102004043356A DE102004043356A1 (de) 2004-09-08 2004-09-08 Sensorelement mit getrenchter Kaverne

Publications (2)

Publication Number Publication Date
FR2874908A1 FR2874908A1 (fr) 2006-03-10
FR2874908B1 true FR2874908B1 (fr) 2012-03-09

Family

ID=35851993

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0552684A Expired - Fee Related FR2874908B1 (fr) 2004-09-08 2005-09-06 Element de capteur comportant une cavite avec des tranchees

Country Status (5)

Country Link
US (1) US7354786B2 (fr)
JP (1) JP5221845B2 (fr)
DE (1) DE102004043356A1 (fr)
FR (1) FR2874908B1 (fr)
IT (1) ITMI20051637A1 (fr)

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EP1804281B1 (fr) * 2005-12-28 2011-12-14 STMicroelectronics Srl Procédé pour creuser une tranchée profonde dans un corps semi-conducteur et corps semi-conducteur ainsi obtenu
DE102006024668A1 (de) 2006-05-26 2007-11-29 Robert Bosch Gmbh Mikromechanisches Bauelement und Verfahren zu dessen Herstellung
DE102006052630A1 (de) * 2006-10-19 2008-04-24 Robert Bosch Gmbh Mikromechanisches Bauelement mit monolithisch integrierter Schaltung und Verfahren zur Herstellung eines Bauelements
DE102007002273A1 (de) * 2007-01-16 2008-07-17 Robert Bosch Gmbh Verfahren zur Herstellung eines Bauteils und Sensorelement
DE102007053280A1 (de) * 2007-11-08 2009-05-14 Robert Bosch Gmbh Mikromechanisches Bauelement mit einem Membrangitter
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DE102008040597A1 (de) * 2008-07-22 2010-01-28 Robert Bosch Gmbh Mikromechanisches Bauelement mit Rückvolumen
JP5443937B2 (ja) * 2009-10-16 2014-03-19 Ｓｐｐテクノロジーズ株式会社 シリコン構造体の製造方法及びその製造装置並びにその製造プログラム
US20130130502A1 (en) * 2010-05-21 2013-05-23 Sand 9, Inc. Micromechanical membranes and related structures and methods
US7998776B1 (en) 2010-06-10 2011-08-16 Memsensing Microsystems Technology Co., Ltd. Methods for manufacturing MEMS sensor and thin film thereof with improved etching process
US8481400B2 (en) * 2010-09-17 2013-07-09 Infineon Technologies Ag Semiconductor manufacturing and semiconductor device with semiconductor structure
DE102011006332A1 (de) * 2011-03-29 2012-10-04 Robert Bosch Gmbh Verfahren zum Erzeugen von monokristallinen Piezowiderständen
DE102012200983A1 (de) 2011-12-23 2013-06-27 Continental Automotive Gmbh Sensorelement mit Luftdruckmessung
US8881596B2 (en) * 2012-01-30 2014-11-11 Continental Automotive Systems, Inc. Semiconductor sensing device to minimize thermal noise
JP5868202B2 (ja) * 2012-02-01 2016-02-24 ローム株式会社 静電容量型圧力センサおよびその製造方法
JP6160044B2 (ja) 2012-08-30 2017-07-12 富士電機株式会社 半導体装置の製造方法
CN103681233B (zh) * 2012-09-05 2016-06-15 无锡华润上华半导体有限公司 一种多沟槽结构的制作方法
JP2014120729A (ja) * 2012-12-19 2014-06-30 Fuji Electric Co Ltd 半導体基板の製造方法および半導体装置
US9061896B2 (en) * 2013-08-26 2015-06-23 Infineon Technologies Ag Method for manufacturing a MEMS device and MEMS device
JP6432190B2 (ja) 2014-07-25 2018-12-05 セイコーエプソン株式会社 振動素子、振動素子の製造方法、振動子、電子機器および移動体
EP3153851B1 (fr) 2015-10-06 2024-05-01 Carrier Corporation Puce mems a structures de detection
US10612925B2 (en) * 2016-02-29 2020-04-07 The Regents Of The University Of Michigan Assembly processes for three-dimensional microstructures
DE102016220077A1 (de) * 2016-10-14 2018-04-19 Robert Bosch Gmbh Verfahren zum Herstellen eines mikromechanischen Drucksensors
DE102017203919A1 (de) * 2017-03-09 2018-09-13 Robert Bosch Gmbh Verfahren zum Herstellen einer MEMS-Einrichtung für einen mikromechanischen Drucksensor
US10597288B2 (en) 2017-05-30 2020-03-24 Rohm Co., Ltd. MEMS-device manufacturing method, MEMS device, and MEMS module
DE102017210691A1 (de) * 2017-06-26 2018-12-27 Robert Bosch Gmbh Verfahren zur Herstellung von mikromechanischen Sensoren
CN109205549A (zh) * 2017-07-03 2019-01-15 无锡华润上华科技有限公司 双空腔结构的制备方法
US10461152B2 (en) 2017-07-10 2019-10-29 Globalfoundries Inc. Radio frequency switches with air gap structures
DE102017213351A1 (de) * 2017-08-02 2019-02-07 Robert Bosch Gmbh Sensorvorrichtung und Herstellungsverfahren für eine Sensorvorrichtung mit zumindest einer chemischen oder elektrochemischen Detektiereinrichtung
CN107473178A (zh) * 2017-08-21 2017-12-15 叶军 一种mems器件湿法刻蚀工艺
US10833153B2 (en) 2017-09-13 2020-11-10 Globalfoundries Inc. Switch with local silicon on insulator (SOI) and deep trench isolation
DE102017216941A1 (de) * 2017-09-25 2019-03-28 Robert Bosch Gmbh Verfahren zum Herstellen eines mikromechanischen Elements
US10446643B2 (en) 2018-01-22 2019-10-15 Globalfoundries Inc. Sealed cavity structures with a planar surface
KR101999726B1 (ko) * 2018-04-24 2019-07-12 한국과학기술연구원 트렌치를 따라 주름진 멤브레인을 갖는 멤브레인 소자 및 그 제조방법과 이를 이용하는 응용장치
DE102018207689B4 (de) * 2018-05-17 2021-09-23 Robert Bosch Gmbh Verfahren zum Herstellen mindestens einer Membrananordnung, Membrananordnung für einen mikromechanischen Sensor und Bauteil
CN108839672A (zh) * 2018-06-28 2018-11-20 上海工程技术大学 一种钢轨长波波磨检测装置
US11410872B2 (en) 2018-11-30 2022-08-09 Globalfoundries U.S. Inc. Oxidized cavity structures within and under semiconductor devices
US10923577B2 (en) * 2019-01-07 2021-02-16 Globalfoundries U.S. Inc. Cavity structures under shallow trench isolation regions
US11127816B2 (en) 2020-02-14 2021-09-21 Globalfoundries U.S. Inc. Heterojunction bipolar transistors with one or more sealed airgap
DE102020211554B3 (de) 2020-09-15 2021-09-30 Robert Bosch Gesellschaft mit beschränkter Haftung Herstellungsverfahren für ein mikromechanisches Bauteil
DE102021205736A1 (de) 2021-06-08 2022-12-08 Robert Bosch Gesellschaft mit beschränkter Haftung Mikromechanisches Bauteil für eine Sensorvorrichtung

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DE4241045C1 (de) * 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
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DE10030352A1 (de) 2000-06-21 2002-01-10 Bosch Gmbh Robert Mikromechanisches Bauelement, insbesondere Sensorelement, mit einer stabilisierten Membran und Verfahren zur Herstellung eines derartigen Bauelements
KR100414570B1 (ko) * 2000-07-03 2004-01-07 조동일 삼중막을 이용한 단결정 실리콘 미세 구조물의 절연 방법
DE10032579B4 (de) 2000-07-05 2020-07-02 Robert Bosch Gmbh Verfahren zur Herstellung eines Halbleiterbauelements sowie ein nach dem Verfahren hergestelltes Halbleiterbauelement
US7294536B2 (en) * 2000-07-25 2007-11-13 Stmicroelectronics S.R.L. Process for manufacturing an SOI wafer by annealing and oxidation of buried channels
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JP2004146552A (ja) * 2002-10-24 2004-05-20 Fujitsu Ltd 微細レジストパターンの形成方法
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DE102004036032A1 (de) 2003-12-16 2005-07-21 Robert Bosch Gmbh Verfahren zur Herstellung eines Halbleiterbauelements sowie ein Halbleiterbauelement, insbesondere ein Membransensor
US7425507B2 (en) * 2005-06-28 2008-09-16 Micron Technology, Inc. Semiconductor substrates including vias of nonuniform cross section, methods of forming and associated structures

Also Published As

Publication number Publication date
US7354786B2 (en) 2008-04-08
JP5221845B2 (ja) 2013-06-26
DE102004043356A1 (de) 2006-03-09
FR2874908A1 (fr) 2006-03-10
ITMI20051637A1 (it) 2006-03-09
JP2006075981A (ja) 2006-03-23
US20060057816A1 (en) 2006-03-16

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