FR2646289A1 - Circuit integre du type mosfet, en particulier inverseur logique - Google Patents

Circuit integre du type mosfet, en particulier inverseur logique Download PDF

Info

Publication number
FR2646289A1
FR2646289A1 FR9005083A FR9005083A FR2646289A1 FR 2646289 A1 FR2646289 A1 FR 2646289A1 FR 9005083 A FR9005083 A FR 9005083A FR 9005083 A FR9005083 A FR 9005083A FR 2646289 A1 FR2646289 A1 FR 2646289A1
Authority
FR
France
Prior art keywords
type
mosfet
semiconductor substrate
conductivity
depletion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR9005083A
Other languages
English (en)
French (fr)
Other versions
FR2646289B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MASU KASUYA
TSUBOUCHT KAZUO
Original Assignee
MASU KASUYA
TSUBOUCHT KAZUO
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MASU KASUYA, TSUBOUCHT KAZUO filed Critical MASU KASUYA
Publication of FR2646289A1 publication Critical patent/FR2646289A1/fr
Application granted granted Critical
Publication of FR2646289B1 publication Critical patent/FR2646289B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/84—Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H10D64/668—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers the layer being a silicide, e.g. TiSi2

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
FR9005083A 1989-04-21 1990-04-20 Circuit integre du type mosfet, en particulier inverseur logique Granted FR2646289A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10215689 1989-04-21

Publications (2)

Publication Number Publication Date
FR2646289A1 true FR2646289A1 (fr) 1990-10-26
FR2646289B1 FR2646289B1 (enrdf_load_stackoverflow) 1994-08-19

Family

ID=14319867

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9005083A Granted FR2646289A1 (fr) 1989-04-21 1990-04-20 Circuit integre du type mosfet, en particulier inverseur logique

Country Status (6)

Country Link
JP (1) JPH0348460A (enrdf_load_stackoverflow)
CA (1) CA2014296C (enrdf_load_stackoverflow)
DE (1) DE4012681A1 (enrdf_load_stackoverflow)
FR (1) FR2646289A1 (enrdf_load_stackoverflow)
GB (1) GB2231720B (enrdf_load_stackoverflow)
NL (1) NL9000949A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2243948B (en) * 1990-04-20 1994-06-08 Nobuo Mikoshiba Integrated circuit
JPH1168105A (ja) 1997-08-26 1999-03-09 Mitsubishi Electric Corp 半導体装置
US7064050B2 (en) * 2003-11-28 2006-06-20 International Business Machines Corporation Metal carbide gate structure and method of fabrication
US7667277B2 (en) * 2005-01-13 2010-02-23 International Business Machines Corporation TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks
US8063450B2 (en) 2006-09-19 2011-11-22 Qunano Ab Assembly of nanoscaled field effect transistors
JP2022175792A (ja) * 2021-05-14 2022-11-25 国立大学法人東京工業大学 半導体装置および浮遊ゲートデバイスの製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2083351A1 (enrdf_load_stackoverflow) * 1970-03-17 1971-12-17 Siemens Ag
JPS56165359A (en) * 1980-05-23 1981-12-18 Nec Corp Semiconductor device
JPS56165358A (en) * 1980-05-23 1981-12-18 Nec Corp Semiconductor device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5214383A (en) * 1975-07-24 1977-02-03 Fujitsu Ltd Mis-type semiconductor device
JPS57128967A (en) * 1981-02-02 1982-08-10 Nec Corp Integrated semiconductor device
JPS5925273A (ja) * 1982-08-03 1984-02-09 Toshiba Corp 半導体装置及びその製造方法
JPS59168666A (ja) * 1983-03-15 1984-09-22 Toshiba Corp 半導体装置
DE3330851A1 (de) * 1983-08-26 1985-03-14 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von hochintegrierten komplementaeren mos-feldeffekttransistorschaltungen
JPS60100474A (ja) * 1983-11-04 1985-06-04 Shindengen Electric Mfg Co Ltd 半導体圧力センサ
JPS60100473A (ja) * 1983-11-05 1985-06-04 Mitsubishi Electric Corp 電界効果トランジスタ
JPS61137317A (ja) * 1984-12-10 1986-06-25 Agency Of Ind Science & Technol 半導体装置用電極材料
JPS62219966A (ja) * 1986-03-22 1987-09-28 Toshiba Corp 半導体装置
JPS63113895A (ja) * 1986-10-30 1988-05-18 Nec Corp Ｍｏｓ型半導体集積回路装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2083351A1 (enrdf_load_stackoverflow) * 1970-03-17 1971-12-17 Siemens Ag
JPS56165359A (en) * 1980-05-23 1981-12-18 Nec Corp Semiconductor device
JPS56165358A (en) * 1980-05-23 1981-12-18 Nec Corp Semiconductor device

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
IBM TECHNICAL DISCLOSURE BULLETIN, vol. 8, no. 4, septembre 1965, pages 677-678, Armonk, NY, US; H.S. LEHMAN et al.: "Fabrication on field effect transistors" *
IEEE TRANSACTIONS ON ELECTRON DEVICES, vol ED-34, no. 1, janvier 1987, pages 28-38, New York, NY, US; J.J. WATT et al.: "A low-temperature NMOS technology with cesium-implanted load devices" *
PATENT ABSTRACTS OF JAPAN, vol. 6, no. 52 (E-100)[930], 7 avril 1982; & JP-A-56 165 358 (NIPPON DENKI K.K.) 18-12-1981 *
PATENT ABSTRACTS OF JAPAN, vol. 6, no. 52 (E-100)[930], 7 avril 1982; & JP-A-56 165 359 (NIPPON DENKI K.K.) 18-12-1981 *

Also Published As

Publication number Publication date
NL9000949A (nl) 1990-11-16
GB2231720B (en) 1993-08-11
JPH0348460A (ja) 1991-03-01
DE4012681A1 (de) 1990-10-25
CA2014296C (en) 2000-08-01
GB2231720A (en) 1990-11-21
GB9008525D0 (en) 1990-06-13
CA2014296A1 (en) 1990-10-21
FR2646289B1 (enrdf_load_stackoverflow) 1994-08-19

Similar Documents

Publication Publication Date Title
US6770902B2 (en) Charge carrier extracting transistor
US7224205B2 (en) Apparatus and method for improving drive-strength and leakage of deep submicron MOS transistors
JPH0478028B2 (enrdf_load_stackoverflow)
FR2930073A1 (fr) Procede de fabrication de transistors mosfet complementaires de type p et n, et dispositif electronique comprenant de tels transistors, et processeur comprenant au moins un tel dispositif.
FR2666932A1 (fr) Dispositif semi-conducteur presentant une haute tension de claquage et une faible resistance et procede pour sa fabrication.
KR102737939B1 (ko) 이중층 구조를 구비한 광 트랜지스터
US7867866B2 (en) SOI FET with source-side body doping
FR2689683A1 (fr) Dispositif semiconducteur à transistors complémentaires.
FR2646289A1 (fr) Circuit integre du type mosfet, en particulier inverseur logique
FR3009432A1 (fr) Circuit integre sur soi muni d'un dispositif de protection contre les decharges electrostatiques
FR2468208A1 (fr) Dispositif semiconducteur avec une diode zener
JPH10125902A (ja) アンチモン化ガリウム相補形ｈｆｅｔ
US3940847A (en) Method of fabricating ion implanted znse p-n junction devices
KR20070115901A (ko) 반절연성 산화아연 반도체 박막과 실리콘의 헤테로 접합을가지는 광다이오드
Yang et al. Tunable negative differential resistance in MISIM tunnel diodes structure with concentric circular electrodes controlled by designed substrate bias
JPH025302B2 (enrdf_load_stackoverflow)
FR2661277A1 (fr) Circuit integre du type mosfet, en particulier inverseur logique.
FR2794898A1 (fr) Dispositif semi-conducteur a tension de seuil compensee et procede de fabrication
EP1258042A1 (fr) Transistor mos pour circuits a haute densite d'integration
FR2993402A1 (fr) Circuit integre sur soi comprenant une diode laterale de protection contre des decharges electrostatiques
FR2905524A1 (fr) Dispositif de type mosfet partiellement deserte comportant un isolant de grille en deux parties et utilisation comme cellule de memoire
GB1422465A (en) Semiconductor device
KR102789965B1 (ko) 이중층 구조를 구비한 광 트랜지스터 제조 방법
KR102789966B1 (ko) IGZO 및 TiOx의 이중층 구조를 구비한 광 반응성 전계 효과 트랜지스터 제조 방법
US20120068269A1 (en) Producing a perfect P-N junction

Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse