GB2231720B - Integrated circuit - Google Patents

Integrated circuit

Info

Publication number
GB2231720B
GB2231720B GB9008525A GB9008525A GB2231720B GB 2231720 B GB2231720 B GB 2231720B GB 9008525 A GB9008525 A GB 9008525A GB 9008525 A GB9008525 A GB 9008525A GB 2231720 B GB2231720 B GB 2231720B
Authority
GB
United Kingdom
Prior art keywords
integrated circuit
integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9008525A
Other languages
English (en)
Other versions
GB2231720A (en
GB9008525D0 (en
Inventor
Nobuo Mikoshiba
Kazuo Tsubouchi
Kazuya Masu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of GB9008525D0 publication Critical patent/GB9008525D0/en
Publication of GB2231720A publication Critical patent/GB2231720A/en
Application granted granted Critical
Publication of GB2231720B publication Critical patent/GB2231720B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/84—Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H10D64/668—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers the layer being a silicide, e.g. TiSi2
GB9008525A 1989-04-21 1990-04-17 Integrated circuit Expired - Fee Related GB2231720B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10215689 1989-04-21

Publications (3)

Publication Number Publication Date
GB9008525D0 GB9008525D0 (en) 1990-06-13
GB2231720A GB2231720A (en) 1990-11-21
GB2231720B true GB2231720B (en) 1993-08-11

Family

ID=14319867

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9008525A Expired - Fee Related GB2231720B (en) 1989-04-21 1990-04-17 Integrated circuit

Country Status (6)

Country Link
JP (1) JPH0348460A (enrdf_load_stackoverflow)
CA (1) CA2014296C (enrdf_load_stackoverflow)
DE (1) DE4012681A1 (enrdf_load_stackoverflow)
FR (1) FR2646289A1 (enrdf_load_stackoverflow)
GB (1) GB2231720B (enrdf_load_stackoverflow)
NL (1) NL9000949A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2243948B (en) * 1990-04-20 1994-06-08 Nobuo Mikoshiba Integrated circuit
JPH1168105A (ja) 1997-08-26 1999-03-09 Mitsubishi Electric Corp 半導体装置
US7064050B2 (en) * 2003-11-28 2006-06-20 International Business Machines Corporation Metal carbide gate structure and method of fabrication
US7667277B2 (en) * 2005-01-13 2010-02-23 International Business Machines Corporation TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks
US8063450B2 (en) 2006-09-19 2011-11-22 Qunano Ab Assembly of nanoscaled field effect transistors
JP2022175792A (ja) * 2021-05-14 2022-11-25 国立大学法人東京工業大学 半導体装置および浮遊ゲートデバイスの製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2126419A (en) * 1982-08-03 1984-03-21 Tokyo Shibaura Electric Co Materials for MOS device gate electrodes
EP0135163A1 (de) * 1983-08-26 1985-03-27 Siemens Aktiengesellschaft Verfahren zum Herstellen von hochintegrierten komplementären MOS-Feldeffekttransistorschaltungen
JPS60100473A (ja) * 1983-11-05 1985-06-04 Mitsubishi Electric Corp 電界効果トランジスタ
JPS60100474A (ja) * 1983-11-04 1985-06-04 Shindengen Electric Mfg Co Ltd 半導体圧力センサ
EP0239019A2 (en) * 1986-03-22 1987-09-30 Kabushiki Kaisha Toshiba Field-effect transistor devices

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2012712B2 (de) * 1970-03-17 1972-11-02 Siemens AG, 1000 Berlin und 8000 München Integrierte bistabile kippschaltung mit feldeffekttransistoren
JPS5214383A (en) * 1975-07-24 1977-02-03 Fujitsu Ltd Mis-type semiconductor device
JPS56165358A (en) * 1980-05-23 1981-12-18 Nec Corp Semiconductor device
JPS56165359A (en) * 1980-05-23 1981-12-18 Nec Corp Semiconductor device
JPS57128967A (en) * 1981-02-02 1982-08-10 Nec Corp Integrated semiconductor device
JPS59168666A (ja) * 1983-03-15 1984-09-22 Toshiba Corp 半導体装置
JPS61137317A (ja) * 1984-12-10 1986-06-25 Agency Of Ind Science & Technol 半導体装置用電極材料
JPS63113895A (ja) * 1986-10-30 1988-05-18 Nec Corp Ｍｏｓ型半導体集積回路装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2126419A (en) * 1982-08-03 1984-03-21 Tokyo Shibaura Electric Co Materials for MOS device gate electrodes
EP0135163A1 (de) * 1983-08-26 1985-03-27 Siemens Aktiengesellschaft Verfahren zum Herstellen von hochintegrierten komplementären MOS-Feldeffekttransistorschaltungen
JPS60100474A (ja) * 1983-11-04 1985-06-04 Shindengen Electric Mfg Co Ltd 半導体圧力センサ
JPS60100473A (ja) * 1983-11-05 1985-06-04 Mitsubishi Electric Corp 電界効果トランジスタ
EP0239019A2 (en) * 1986-03-22 1987-09-30 Kabushiki Kaisha Toshiba Field-effect transistor devices

Also Published As

Publication number Publication date
NL9000949A (nl) 1990-11-16
FR2646289A1 (fr) 1990-10-26
JPH0348460A (ja) 1991-03-01
DE4012681A1 (de) 1990-10-25
CA2014296C (en) 2000-08-01
GB2231720A (en) 1990-11-21
GB9008525D0 (en) 1990-06-13
CA2014296A1 (en) 1990-10-21
FR2646289B1 (enrdf_load_stackoverflow) 1994-08-19

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20010417