FR2083351A1 - - Google Patents
Info
- Publication number
- FR2083351A1 FR2083351A1 FR7109272A FR7109272A FR2083351A1 FR 2083351 A1 FR2083351 A1 FR 2083351A1 FR 7109272 A FR7109272 A FR 7109272A FR 7109272 A FR7109272 A FR 7109272A FR 2083351 A1 FR2083351 A1 FR 2083351A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/84—Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19702012712 DE2012712B2 (de) | 1970-03-17 | 1970-03-17 | Integrierte bistabile kippschaltung mit feldeffekttransistoren |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2083351A1 true FR2083351A1 (enrdf_load_stackoverflow) | 1971-12-17 |
Family
ID=5765365
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7109272A Withdrawn FR2083351A1 (enrdf_load_stackoverflow) | 1970-03-17 | 1971-03-17 |
Country Status (5)
Country | Link |
---|---|
CH (1) | CH515583A (enrdf_load_stackoverflow) |
DE (1) | DE2012712B2 (enrdf_load_stackoverflow) |
FR (1) | FR2083351A1 (enrdf_load_stackoverflow) |
GB (1) | GB1324045A (enrdf_load_stackoverflow) |
NL (1) | NL7103517A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2646289A1 (fr) * | 1989-04-21 | 1990-10-26 | Mikoshiba Nobuo | Circuit integre du type mosfet, en particulier inverseur logique |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2539911C3 (de) * | 1975-09-08 | 1982-06-03 | Siemens AG, 1000 Berlin und 8000 München | Schwellwertschalter in integrierter MOS-Technik |
EP0040436B1 (en) * | 1980-05-20 | 1986-04-30 | Kabushiki Kaisha Toshiba | Semiconductor device |
-
1970
- 1970-03-17 DE DE19702012712 patent/DE2012712B2/de active Pending
-
1971
- 1971-03-01 CH CH297271A patent/CH515583A/de not_active IP Right Cessation
- 1971-03-16 NL NL7103517A patent/NL7103517A/xx unknown
- 1971-03-17 FR FR7109272A patent/FR2083351A1/fr not_active Withdrawn
- 1971-04-19 GB GB2463371*A patent/GB1324045A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2646289A1 (fr) * | 1989-04-21 | 1990-10-26 | Mikoshiba Nobuo | Circuit integre du type mosfet, en particulier inverseur logique |
Also Published As
Publication number | Publication date |
---|---|
CH515583A (de) | 1971-11-15 |
GB1324045A (en) | 1973-07-18 |
DE2012712A1 (de) | 1971-10-14 |
DE2012712B2 (de) | 1972-11-02 |
NL7103517A (enrdf_load_stackoverflow) | 1971-09-21 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |