FR2083351A1 - - Google Patents

Info

Publication number
FR2083351A1
FR2083351A1 FR7109272A FR7109272A FR2083351A1 FR 2083351 A1 FR2083351 A1 FR 2083351A1 FR 7109272 A FR7109272 A FR 7109272A FR 7109272 A FR7109272 A FR 7109272A FR 2083351 A1 FR2083351 A1 FR 2083351A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7109272A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2083351A1 publication Critical patent/FR2083351A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/84Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FR7109272A 1970-03-17 1971-03-17 Withdrawn FR2083351A1 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702012712 DE2012712B2 (de) 1970-03-17 1970-03-17 Integrierte bistabile kippschaltung mit feldeffekttransistoren

Publications (1)

Publication Number Publication Date
FR2083351A1 true FR2083351A1 (enrdf_load_stackoverflow) 1971-12-17

Family

ID=5765365

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7109272A Withdrawn FR2083351A1 (enrdf_load_stackoverflow) 1970-03-17 1971-03-17

Country Status (5)

Country Link
CH (1) CH515583A (enrdf_load_stackoverflow)
DE (1) DE2012712B2 (enrdf_load_stackoverflow)
FR (1) FR2083351A1 (enrdf_load_stackoverflow)
GB (1) GB1324045A (enrdf_load_stackoverflow)
NL (1) NL7103517A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2646289A1 (fr) * 1989-04-21 1990-10-26 Mikoshiba Nobuo Circuit integre du type mosfet, en particulier inverseur logique

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2539911C3 (de) * 1975-09-08 1982-06-03 Siemens AG, 1000 Berlin und 8000 München Schwellwertschalter in integrierter MOS-Technik
EP0040436B1 (en) * 1980-05-20 1986-04-30 Kabushiki Kaisha Toshiba Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2646289A1 (fr) * 1989-04-21 1990-10-26 Mikoshiba Nobuo Circuit integre du type mosfet, en particulier inverseur logique

Also Published As

Publication number Publication date
CH515583A (de) 1971-11-15
GB1324045A (en) 1973-07-18
DE2012712A1 (de) 1971-10-14
DE2012712B2 (de) 1972-11-02
NL7103517A (enrdf_load_stackoverflow) 1971-09-21

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Legal Events

Date Code Title Description
ST Notification of lapse