GB1324045A - Integrated circuit storage elements incorporating field effect transistors - Google Patents

Integrated circuit storage elements incorporating field effect transistors

Info

Publication number
GB1324045A
GB1324045A GB2463371*A GB2463371A GB1324045A GB 1324045 A GB1324045 A GB 1324045A GB 2463371 A GB2463371 A GB 2463371A GB 1324045 A GB1324045 A GB 1324045A
Authority
GB
United Kingdom
Prior art keywords
integrated circuit
field effect
storage elements
effect transistors
circuit storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2463371*A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1324045A publication Critical patent/GB1324045A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/84—Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
GB2463371*A 1970-03-17 1971-04-19 Integrated circuit storage elements incorporating field effect transistors Expired GB1324045A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702012712 DE2012712B2 (de) 1970-03-17 1970-03-17 Integrierte bistabile kippschaltung mit feldeffekttransistoren

Publications (1)

Publication Number Publication Date
GB1324045A true GB1324045A (en) 1973-07-18

Family

ID=5765365

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2463371*A Expired GB1324045A (en) 1970-03-17 1971-04-19 Integrated circuit storage elements incorporating field effect transistors

Country Status (5)

Country Link
CH (1) CH515583A (enrdf_load_stackoverflow)
DE (1) DE2012712B2 (enrdf_load_stackoverflow)
FR (1) FR2083351A1 (enrdf_load_stackoverflow)
GB (1) GB1324045A (enrdf_load_stackoverflow)
NL (1) NL7103517A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2539911C3 (de) * 1975-09-08 1982-06-03 Siemens AG, 1000 Berlin und 8000 München Schwellwertschalter in integrierter MOS-Technik
EP0040436B1 (en) * 1980-05-20 1986-04-30 Kabushiki Kaisha Toshiba Semiconductor device
CA2014296C (en) * 1989-04-21 2000-08-01 Nobuo Mikoshiba Integrated circuit

Also Published As

Publication number Publication date
CH515583A (de) 1971-11-15
DE2012712A1 (de) 1971-10-14
FR2083351A1 (enrdf_load_stackoverflow) 1971-12-17
DE2012712B2 (de) 1972-11-02
NL7103517A (enrdf_load_stackoverflow) 1971-09-21

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees