FR2623321B1 - Memoire vive statique comportant une fonction de remise a zero instantanee - Google Patents

Memoire vive statique comportant une fonction de remise a zero instantanee

Info

Publication number
FR2623321B1
FR2623321B1 FR8814959A FR8814959A FR2623321B1 FR 2623321 B1 FR2623321 B1 FR 2623321B1 FR 8814959 A FR8814959 A FR 8814959A FR 8814959 A FR8814959 A FR 8814959A FR 2623321 B1 FR2623321 B1 FR 2623321B1
Authority
FR
France
Prior art keywords
vive
static
memory
instant reset
instant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR8814959A
Other languages
English (en)
Other versions
FR2623321A1 (fr
Inventor
Araki Shigeo
Taniguchi Hitoshi
Suzuki Hiroyuki
Komatsu Takaaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2623321A1 publication Critical patent/FR2623321A1/fr
Application granted granted Critical
Publication of FR2623321B1 publication Critical patent/FR2623321B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
  • Rehabilitation Tools (AREA)
FR8814959A 1987-11-17 1988-11-17 Memoire vive statique comportant une fonction de remise a zero instantanee Expired - Fee Related FR2623321B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62290408A JPH01130385A (ja) 1987-11-17 1987-11-17 メモリ装置

Publications (2)

Publication Number Publication Date
FR2623321A1 FR2623321A1 (fr) 1989-05-19
FR2623321B1 true FR2623321B1 (fr) 1993-10-01

Family

ID=17755629

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8814959A Expired - Fee Related FR2623321B1 (fr) 1987-11-17 1988-11-17 Memoire vive statique comportant une fonction de remise a zero instantanee

Country Status (6)

Country Link
US (1) US4949308A (fr)
JP (1) JPH01130385A (fr)
KR (2) KR0135085B1 (fr)
FR (1) FR2623321B1 (fr)
GB (1) GB2212683B (fr)
NL (1) NL194851C (fr)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5054000A (en) * 1988-02-19 1991-10-01 Sony Corporation Static random access memory device having a high speed read-out and flash-clear functions
JP3057693B2 (ja) * 1989-07-27 2000-07-04 日本電気アイシーマイコンシステム株式会社 半導体メモリ
KR100204721B1 (ko) * 1989-08-18 1999-06-15 가나이 쓰도무 메모리블럭으로 분활된 메모리셀 어레이를 갖는 전기적 소거 가능한 반도체 불휘발성 기억장치
JP2634916B2 (ja) * 1989-10-04 1997-07-30 日本電気アイシーマイコンシステム株式会社 半導体メモリ
JP2768383B2 (ja) * 1989-10-30 1998-06-25 川崎製鉄株式会社 半導体集積回路
DE69024921T2 (de) * 1989-11-24 1996-09-05 Nec Corp Halbleiterspeicheranordnung mit rückstellbaren Speicherzellen
US5519654A (en) * 1990-09-17 1996-05-21 Kabushiki Kaisha Toshiba Semiconductor memory device with external capacitor to charge pump in an EEPROM circuit
US5373466A (en) * 1992-03-25 1994-12-13 Harris Corporation Flash-clear of ram array using partial reset mechanism
US5537350A (en) * 1993-09-10 1996-07-16 Intel Corporation Method and apparatus for sequential programming of the bits in a word of a flash EEPROM memory array
US6004209A (en) * 1994-05-31 1999-12-21 Capcom Co., Ltd. Body-acoustic device, playing apparatus and its control method, light-beam utilizing playing apparatus, and acoustic apparatus
US5749090A (en) * 1994-08-22 1998-05-05 Motorola, Inc. Cache tag RAM having separate valid bit array with multiple step invalidation and method therefor
FR2760286B1 (fr) * 1997-02-28 1999-04-16 Sgs Thomson Microelectronics Procede d'effacement d'une memoire ram statique et memoire en circuit integre associe
JPH1186038A (ja) * 1997-03-03 1999-03-30 Sega Enterp Ltd 画像処理装置、画像処理方法及び媒体並びにゲーム機
US6144611A (en) * 1999-09-07 2000-11-07 Motorola Inc. Method for clearing memory contents and memory array capable of performing the same
EP1324340A1 (fr) * 2001-12-28 2003-07-02 STMicroelectronics S.r.l. Mémoire RAM statique avec fonction d'effacement de type flash
KR100520273B1 (ko) * 2003-04-02 2005-10-11 삼부크러치주식회사 목발
US7701764B2 (en) 2006-05-17 2010-04-20 Micron Technology, Inc. Apparatus and method for reduced peak power consumption during common operation of multi-NAND flash memory devices
US7570532B1 (en) 2007-07-26 2009-08-04 Zilog, Inc. Overwriting memory cells using low instantaneous current
KR200454246Y1 (ko) * 2009-08-25 2011-06-23 전병숙 지팡이 겸용 목발
US9715909B2 (en) 2013-03-14 2017-07-25 Micron Technology, Inc. Apparatuses and methods for controlling data timing in a multi-memory system
KR101502566B1 (ko) * 2013-10-10 2015-03-19 김진호 휴대가 간편한 목발
US9804793B2 (en) * 2016-03-04 2017-10-31 Intel Corporation Techniques for a write zero operation

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5819793A (ja) * 1981-07-27 1983-02-04 Toshiba Corp 半導体メモリ装置
JPS5914195A (ja) * 1982-07-13 1984-01-25 Nec Corp 半導体装置
US4567578A (en) * 1982-09-08 1986-01-28 Harris Corporation Cache memory flush scheme
JPS5987695A (ja) * 1982-11-11 1984-05-21 Toshiba Corp 半導体記憶装置
US4587629A (en) * 1983-12-30 1986-05-06 International Business Machines Corporation Random address memory with fast clear
EP0189700A3 (fr) * 1984-12-28 1988-04-27 Thomson Components-Mostek Corporation Mémoire statique avec fonction de remise à zéro rapide
US4774691A (en) * 1985-11-13 1988-09-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device
US4789967A (en) * 1986-09-16 1988-12-06 Advanced Micro Devices, Inc. Random access memory device with block reset

Also Published As

Publication number Publication date
GB2212683B (en) 1992-04-15
KR900007388A (ko) 1990-06-01
GB8826773D0 (en) 1988-12-21
KR0135085B1 (ko) 1998-04-25
FR2623321A1 (fr) 1989-05-19
NL194851C (nl) 2003-04-03
KR890008836A (ko) 1989-07-12
NL8802800A (nl) 1989-06-16
NL194851B (nl) 2002-12-02
JPH01130385A (ja) 1989-05-23
US4949308A (en) 1990-08-14
GB2212683A (en) 1989-07-26

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Legal Events

Date Code Title Description
ST Notification of lapse