GB2212683B - Static random access memories - Google Patents

Static random access memories

Info

Publication number
GB2212683B
GB2212683B GB8826773A GB8826773A GB2212683B GB 2212683 B GB2212683 B GB 2212683B GB 8826773 A GB8826773 A GB 8826773A GB 8826773 A GB8826773 A GB 8826773A GB 2212683 B GB2212683 B GB 2212683B
Authority
GB
United Kingdom
Prior art keywords
random access
static random
access memories
memories
static
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB8826773A
Other versions
GB2212683A (en
GB8826773D0 (en
Inventor
Shigeo Araki
Hitoshi Taniguchi
Hiroyuki Suzuki
Takaaki Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB8826773D0 publication Critical patent/GB8826773D0/en
Publication of GB2212683A publication Critical patent/GB2212683A/en
Application granted granted Critical
Publication of GB2212683B publication Critical patent/GB2212683B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
GB8826773A 1987-11-17 1988-11-16 Static random access memories Expired - Lifetime GB2212683B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62290408A JPH01130385A (en) 1987-11-17 1987-11-17 Memory device

Publications (3)

Publication Number Publication Date
GB8826773D0 GB8826773D0 (en) 1988-12-21
GB2212683A GB2212683A (en) 1989-07-26
GB2212683B true GB2212683B (en) 1992-04-15

Family

ID=17755629

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8826773A Expired - Lifetime GB2212683B (en) 1987-11-17 1988-11-16 Static random access memories

Country Status (6)

Country Link
US (1) US4949308A (en)
JP (1) JPH01130385A (en)
KR (2) KR890008836A (en)
FR (1) FR2623321B1 (en)
GB (1) GB2212683B (en)
NL (1) NL194851C (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5054000A (en) * 1988-02-19 1991-10-01 Sony Corporation Static random access memory device having a high speed read-out and flash-clear functions
JP3057693B2 (en) * 1989-07-27 2000-07-04 日本電気アイシーマイコンシステム株式会社 Semiconductor memory
KR100204721B1 (en) * 1989-08-18 1999-06-15 가나이 쓰도무 Electrically erasable semiconductor memory device with divided memory cell array
JP2634916B2 (en) * 1989-10-04 1997-07-30 日本電気アイシーマイコンシステム株式会社 Semiconductor memory
JP2768383B2 (en) * 1989-10-30 1998-06-25 川崎製鉄株式会社 Semiconductor integrated circuit
DE69024921T2 (en) * 1989-11-24 1996-09-05 Nec Corp Semiconductor memory arrangement with resettable memory cells
US5519654A (en) * 1990-09-17 1996-05-21 Kabushiki Kaisha Toshiba Semiconductor memory device with external capacitor to charge pump in an EEPROM circuit
US5373466A (en) * 1992-03-25 1994-12-13 Harris Corporation Flash-clear of ram array using partial reset mechanism
US5537350A (en) * 1993-09-10 1996-07-16 Intel Corporation Method and apparatus for sequential programming of the bits in a word of a flash EEPROM memory array
KR970703691A (en) * 1994-05-31 1997-07-03 쯔지모또 겐조오 Sound system, play device and control method, play device using light and sound device
US5749090A (en) * 1994-08-22 1998-05-05 Motorola, Inc. Cache tag RAM having separate valid bit array with multiple step invalidation and method therefor
FR2760286B1 (en) * 1997-02-28 1999-04-16 Sgs Thomson Microelectronics METHOD FOR DELETING A STATIC RAM MEMORY AND RELATED INTEGRATED CIRCUIT MEMORY
JPH1186038A (en) * 1997-03-03 1999-03-30 Sega Enterp Ltd Image processor, image processing method, medium and game machine
US6144611A (en) * 1999-09-07 2000-11-07 Motorola Inc. Method for clearing memory contents and memory array capable of performing the same
EP1324340A1 (en) * 2001-12-28 2003-07-02 STMicroelectronics S.r.l. Static RAM with flash-clear function
KR100520273B1 (en) * 2003-04-02 2005-10-11 삼부크러치주식회사 Crutches
US7701764B2 (en) * 2006-05-17 2010-04-20 Micron Technology, Inc. Apparatus and method for reduced peak power consumption during common operation of multi-NAND flash memory devices
US7570532B1 (en) 2007-07-26 2009-08-04 Zilog, Inc. Overwriting memory cells using low instantaneous current
KR200454246Y1 (en) * 2009-08-25 2011-06-23 전병숙 Crutch usable as stick
US9715909B2 (en) 2013-03-14 2017-07-25 Micron Technology, Inc. Apparatuses and methods for controlling data timing in a multi-memory system
KR101502566B1 (en) * 2013-10-10 2015-03-19 김진호 crutches easy to portable
US9804793B2 (en) * 2016-03-04 2017-10-31 Intel Corporation Techniques for a write zero operation

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0149043A2 (en) * 1983-12-30 1985-07-24 International Business Machines Corporation Random access memory
EP0189700A2 (en) * 1984-12-28 1986-08-06 Thomson Components-Mostek Corporation Static RAM having a flash clear function

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5819793A (en) * 1981-07-27 1983-02-04 Toshiba Corp Semiconductor memory device
JPS5914195A (en) * 1982-07-13 1984-01-25 Nec Corp Semiconductor device
US4567578A (en) * 1982-09-08 1986-01-28 Harris Corporation Cache memory flush scheme
JPS5987695A (en) * 1982-11-11 1984-05-21 Toshiba Corp Semiconductor memory device
US4774691A (en) * 1985-11-13 1988-09-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device
US4789967A (en) * 1986-09-16 1988-12-06 Advanced Micro Devices, Inc. Random access memory device with block reset

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0149043A2 (en) * 1983-12-30 1985-07-24 International Business Machines Corporation Random access memory
EP0189700A2 (en) * 1984-12-28 1986-08-06 Thomson Components-Mostek Corporation Static RAM having a flash clear function

Also Published As

Publication number Publication date
NL194851C (en) 2003-04-03
FR2623321A1 (en) 1989-05-19
US4949308A (en) 1990-08-14
NL8802800A (en) 1989-06-16
KR900007388A (en) 1990-06-01
JPH01130385A (en) 1989-05-23
NL194851B (en) 2002-12-02
KR0135085B1 (en) 1998-04-25
GB2212683A (en) 1989-07-26
FR2623321B1 (en) 1993-10-01
GB8826773D0 (en) 1988-12-21
KR890008836A (en) 1989-07-12

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Legal Events

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PCNP Patent ceased through non-payment of renewal fee