KR900007388A - 높이 조절이 용이한 목발 - Google Patents

높이 조절이 용이한 목발 Download PDF

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Publication number
KR900007388A
KR900007388A KR1019880014944A KR880014944A KR900007388A KR 900007388 A KR900007388 A KR 900007388A KR 1019880014944 A KR1019880014944 A KR 1019880014944A KR 880014944 A KR880014944 A KR 880014944A KR 900007388 A KR900007388 A KR 900007388A
Authority
KR
South Korea
Prior art keywords
support
rod
armrest
height adjustable
coupled
Prior art date
Application number
KR1019880014944A
Other languages
English (en)
Other versions
KR0135085B1 (ko
Inventor
전성용
Original Assignee
전성용
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 전성용 filed Critical 전성용
Publication of KR900007388A publication Critical patent/KR900007388A/ko
Application granted granted Critical
Publication of KR0135085B1 publication Critical patent/KR0135085B1/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
  • Rehabilitation Tools (AREA)

Abstract

내용 없음

Description

높이 조절이 용이한 목발
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 분해 사시도.
제2도는 본 발명의 일부 종단면도.
제3도는 본 발명의 팔걸이부 종단면도.

Claims (1)

  1. 상부지지체(A) 중간지지체(B), 하부지지체(C) 및 팔걸이부(D)가 서로 분해 결합이 가능하고, 상부지지체(A)는 겨드랑이지지부(1)와 여러개의 나사공이 천공된 삽지봉(2)으로 구성되고, 하부지지체(C)는 일체로 결합되어 있는 바닥 지지체(6)및 여러개의 나사공이 천공된 하부삽지봉(5)으로 구성되며, 팔걸이부(D)는 지지봉(8)과 이에 힌지 결합된 팔걸이봉(7)으로 형성되고, 중간지지체(B)는 상부지지체(A), 하부지지체(C), 팔걸이부(D) 및 손잡이부(4)등이 결합될수 있도록 나사공이 천공되어 있음을 특징으로 하는 분해 조립과 높이 조절이 용이한 목발.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880014994A 1987-11-17 1988-11-15 메모리장치 KR0135085B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP290408 1987-11-17
JP62290408A JPH01130385A (ja) 1987-11-17 1987-11-17 メモリ装置

Publications (2)

Publication Number Publication Date
KR900007388A true KR900007388A (ko) 1990-06-01
KR0135085B1 KR0135085B1 (ko) 1998-04-25

Family

ID=17755629

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1019880014994A KR0135085B1 (ko) 1987-11-17 1988-11-15 메모리장치
KR1019880014994A KR890008836A (ko) 1987-11-17 1988-11-15 메모리 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1019880014994A KR890008836A (ko) 1987-11-17 1988-11-15 메모리 장치

Country Status (6)

Country Link
US (1) US4949308A (ko)
JP (1) JPH01130385A (ko)
KR (2) KR0135085B1 (ko)
FR (1) FR2623321B1 (ko)
GB (1) GB2212683B (ko)
NL (1) NL194851C (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100520273B1 (ko) * 2003-04-02 2005-10-11 삼부크러치주식회사 목발
KR200454246Y1 (ko) * 2009-08-25 2011-06-23 전병숙 지팡이 겸용 목발
KR101502566B1 (ko) * 2013-10-10 2015-03-19 김진호 휴대가 간편한 목발

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5054000A (en) * 1988-02-19 1991-10-01 Sony Corporation Static random access memory device having a high speed read-out and flash-clear functions
JP3057693B2 (ja) * 1989-07-27 2000-07-04 日本電気アイシーマイコンシステム株式会社 半導体メモリ
KR100204721B1 (ko) * 1989-08-18 1999-06-15 가나이 쓰도무 메모리블럭으로 분활된 메모리셀 어레이를 갖는 전기적 소거 가능한 반도체 불휘발성 기억장치
JP2634916B2 (ja) * 1989-10-04 1997-07-30 日本電気アイシーマイコンシステム株式会社 半導体メモリ
JP2768383B2 (ja) * 1989-10-30 1998-06-25 川崎製鉄株式会社 半導体集積回路
DE69024921T2 (de) * 1989-11-24 1996-09-05 Nec Corp Halbleiterspeicheranordnung mit rückstellbaren Speicherzellen
US5519654A (en) * 1990-09-17 1996-05-21 Kabushiki Kaisha Toshiba Semiconductor memory device with external capacitor to charge pump in an EEPROM circuit
US5373466A (en) * 1992-03-25 1994-12-13 Harris Corporation Flash-clear of ram array using partial reset mechanism
US5537350A (en) * 1993-09-10 1996-07-16 Intel Corporation Method and apparatus for sequential programming of the bits in a word of a flash EEPROM memory array
US6004209A (en) * 1994-05-31 1999-12-21 Capcom Co., Ltd. Body-acoustic device, playing apparatus and its control method, light-beam utilizing playing apparatus, and acoustic apparatus
US5749090A (en) * 1994-08-22 1998-05-05 Motorola, Inc. Cache tag RAM having separate valid bit array with multiple step invalidation and method therefor
FR2760286B1 (fr) * 1997-02-28 1999-04-16 Sgs Thomson Microelectronics Procede d'effacement d'une memoire ram statique et memoire en circuit integre associe
JPH1186038A (ja) * 1997-03-03 1999-03-30 Sega Enterp Ltd 画像処理装置、画像処理方法及び媒体並びにゲーム機
US6144611A (en) * 1999-09-07 2000-11-07 Motorola Inc. Method for clearing memory contents and memory array capable of performing the same
EP1324340A1 (en) * 2001-12-28 2003-07-02 STMicroelectronics S.r.l. Static RAM with flash-clear function
US7701764B2 (en) 2006-05-17 2010-04-20 Micron Technology, Inc. Apparatus and method for reduced peak power consumption during common operation of multi-NAND flash memory devices
US7570532B1 (en) 2007-07-26 2009-08-04 Zilog, Inc. Overwriting memory cells using low instantaneous current
US9715909B2 (en) 2013-03-14 2017-07-25 Micron Technology, Inc. Apparatuses and methods for controlling data timing in a multi-memory system
US9804793B2 (en) * 2016-03-04 2017-10-31 Intel Corporation Techniques for a write zero operation

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5819793A (ja) * 1981-07-27 1983-02-04 Toshiba Corp 半導体メモリ装置
JPS5914195A (ja) * 1982-07-13 1984-01-25 Nec Corp 半導体装置
US4567578A (en) * 1982-09-08 1986-01-28 Harris Corporation Cache memory flush scheme
JPS5987695A (ja) * 1982-11-11 1984-05-21 Toshiba Corp 半導体記憶装置
US4587629A (en) * 1983-12-30 1986-05-06 International Business Machines Corporation Random address memory with fast clear
EP0189700A3 (en) * 1984-12-28 1988-04-27 Thomson Components-Mostek Corporation Static ram having a flash clear function
US4774691A (en) * 1985-11-13 1988-09-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device
US4789967A (en) * 1986-09-16 1988-12-06 Advanced Micro Devices, Inc. Random access memory device with block reset

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100520273B1 (ko) * 2003-04-02 2005-10-11 삼부크러치주식회사 목발
KR200454246Y1 (ko) * 2009-08-25 2011-06-23 전병숙 지팡이 겸용 목발
KR101502566B1 (ko) * 2013-10-10 2015-03-19 김진호 휴대가 간편한 목발

Also Published As

Publication number Publication date
GB2212683B (en) 1992-04-15
GB8826773D0 (en) 1988-12-21
KR0135085B1 (ko) 1998-04-25
FR2623321A1 (fr) 1989-05-19
NL194851C (nl) 2003-04-03
KR890008836A (ko) 1989-07-12
NL8802800A (nl) 1989-06-16
FR2623321B1 (fr) 1993-10-01
NL194851B (nl) 2002-12-02
JPH01130385A (ja) 1989-05-23
US4949308A (en) 1990-08-14
GB2212683A (en) 1989-07-26

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