FR2585863B1 - Procede et structure pour dispositifs de visualisation a cristaux liquides adresses par matrice et transistors a couche mince. - Google Patents
Procede et structure pour dispositifs de visualisation a cristaux liquides adresses par matrice et transistors a couche mince.Info
- Publication number
- FR2585863B1 FR2585863B1 FR868611186A FR8611186A FR2585863B1 FR 2585863 B1 FR2585863 B1 FR 2585863B1 FR 868611186 A FR868611186 A FR 868611186A FR 8611186 A FR8611186 A FR 8611186A FR 2585863 B1 FR2585863 B1 FR 2585863B1
- Authority
- FR
- France
- Prior art keywords
- liquid crystal
- thin film
- crystal display
- display devices
- film transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004973 liquid crystal related substance Substances 0.000 title 1
- 239000011159 matrix material Substances 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/103—Materials and properties semiconductor a-Si
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/761,938 US4933296A (en) | 1985-08-02 | 1985-08-02 | N+ amorphous silicon thin film transistors for matrix addressed liquid crystal displays |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2585863A1 FR2585863A1 (fr) | 1987-02-06 |
FR2585863B1 true FR2585863B1 (fr) | 1991-10-25 |
Family
ID=25063665
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR868611186A Expired - Fee Related FR2585863B1 (fr) | 1985-08-02 | 1986-08-01 | Procede et structure pour dispositifs de visualisation a cristaux liquides adresses par matrice et transistors a couche mince. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4933296A (fr) |
EP (1) | EP0211401B1 (fr) |
JP (1) | JP2637079B2 (fr) |
DE (1) | DE3636221C2 (fr) |
FR (1) | FR2585863B1 (fr) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6319876A (ja) * | 1986-07-11 | 1988-01-27 | Fuji Xerox Co Ltd | 薄膜トランジスタ装置 |
US4774207A (en) * | 1987-04-20 | 1988-09-27 | General Electric Company | Method for producing high yield electrical contacts to N+ amorphous silicon |
US4778258A (en) * | 1987-10-05 | 1988-10-18 | General Electric Company | Protective tab structure for use in the fabrication of matrix addressed thin film transistor liquid crystal displays |
JP2655865B2 (ja) * | 1988-03-16 | 1997-09-24 | 株式会社日立製作所 | 液晶表示装置の製造方法 |
JP2771820B2 (ja) * | 1988-07-08 | 1998-07-02 | 株式会社日立製作所 | アクティブマトリクスパネル及びその製造方法 |
JPH0283536A (ja) * | 1988-09-20 | 1990-03-23 | Sanyo Electric Co Ltd | 液晶表示装置 |
US4990460A (en) * | 1989-01-27 | 1991-02-05 | Nec Corporation | Fabrication method for thin film field effect transistor array suitable for liquid crystal display |
US5157470A (en) * | 1989-02-27 | 1992-10-20 | Hitachi, Ltd. | Thin film transistor, manufacturing method thereof and matrix circuit board and image display device each using the same |
US5316960A (en) * | 1989-07-11 | 1994-05-31 | Ricoh Company, Ltd. | C-MOS thin film transistor device manufacturing method |
US5470769A (en) * | 1990-03-27 | 1995-11-28 | Goldstar Co., Ltd. | Process for the preparation of a thin film transistor |
JPH03278466A (ja) * | 1990-03-27 | 1991-12-10 | Toshiba Corp | 薄膜トランジスタおよびその製造方法 |
JP2700277B2 (ja) | 1990-06-01 | 1998-01-19 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
US5100816A (en) * | 1990-07-20 | 1992-03-31 | Texas Instruments Incorporated | Method of forming a field effect transistor on the surface of a substrate |
US5930608A (en) | 1992-02-21 | 1999-07-27 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a thin film transistor in which the channel region of the transistor consists of two portions of differing crystallinity |
JP2923700B2 (ja) | 1991-03-27 | 1999-07-26 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
JP3255942B2 (ja) | 1991-06-19 | 2002-02-12 | 株式会社半導体エネルギー研究所 | 逆スタガ薄膜トランジスタの作製方法 |
US5633175A (en) * | 1991-12-19 | 1997-05-27 | Hitachi, Ltd. | Process for stripping photoresist while producing liquid crystal display device |
JP3200639B2 (ja) * | 1992-05-19 | 2001-08-20 | カシオ計算機株式会社 | 薄膜トランジスタパネルの製造方法 |
DE4310640C1 (de) * | 1993-03-31 | 1994-05-11 | Lueder Ernst | Verfahren zur Herstellung einer Matrix aus a-Si:H-Dünnschichttransistoren |
US5346833A (en) * | 1993-04-05 | 1994-09-13 | Industrial Technology Research Institute | Simplified method of making active matrix liquid crystal display |
JPH0766420A (ja) * | 1993-08-31 | 1995-03-10 | Matsushita Electric Ind Co Ltd | 薄膜の加工方法 |
DE4339721C1 (de) * | 1993-11-22 | 1995-02-02 | Lueder Ernst | Verfahren zur Herstellung einer Matrix aus Dünnschichttransistoren |
DE69424759T2 (de) * | 1993-12-28 | 2001-02-08 | Applied Materials Inc | Gasphasenabscheidungsverfahren in einer einzigen Kammer für Dünnfilmtransistoren |
FR2718885B1 (fr) * | 1994-04-15 | 1996-07-05 | Thomson Lcd | Procédé de fabrication d'un TFT étagé inverse. |
JP3421882B2 (ja) * | 1994-10-19 | 2003-06-30 | ソニー株式会社 | 多結晶半導体薄膜の作成方法 |
JPH08184853A (ja) * | 1994-12-27 | 1996-07-16 | Sharp Corp | アクティブマトリクス基板の製造方法およびアクティブマトリクス基板 |
JP3444053B2 (ja) * | 1995-10-13 | 2003-09-08 | ソニー株式会社 | 薄膜半導体装置 |
KR100195269B1 (ko) * | 1995-12-22 | 1999-06-15 | 윤종용 | 액정표시장치의 제조방법 |
KR100232677B1 (ko) * | 1996-04-09 | 1999-12-01 | 구본준 | 박막 트랜지스터의 제조방법 및 그 방법에 의해 제조되는 박막 트랜지스터의 구조 |
KR100223158B1 (ko) * | 1996-06-07 | 1999-10-15 | 구자홍 | 액티브매트릭스기판 및 그 제조방법 |
US20020184970A1 (en) | 2001-12-13 | 2002-12-12 | Wickersham Charles E. | Sptutter targets and methods of manufacturing same to reduce particulate emission during sputtering |
KR100783304B1 (ko) | 2000-05-11 | 2007-12-10 | 토소우 에스엠디, 인크 | 음파 위상 변화 검출을 이용하여 스퍼터 타겟들에서 비파괴 청결도를 평가하는 방법 및 장치 |
US7087142B2 (en) | 2001-04-04 | 2006-08-08 | Tosoh Smd, Inc. | Method for determining a critical size of an inclusion in aluminum or aluminum alloy sputtering target |
US6623653B2 (en) * | 2001-06-12 | 2003-09-23 | Sharp Laboratories Of America, Inc. | System and method for etching adjoining layers of silicon and indium tin oxide |
JP4349904B2 (ja) | 2001-08-09 | 2009-10-21 | トーソー エスエムディー,インク. | 寸法と位置によって分類された欠陥の種類による、非破壊的なターゲット清浄度特性決定のための方法と装置 |
KR100669688B1 (ko) * | 2003-03-12 | 2007-01-18 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 이를 구비한 평판표시소자 |
JP4038485B2 (ja) * | 2003-03-12 | 2008-01-23 | 三星エスディアイ株式会社 | 薄膜トランジスタを備えた平板表示素子 |
TW200625421A (en) * | 2004-09-29 | 2006-07-16 | Koninkl Philips Electronics Nv | Reduction of sheet resistance of phosphorus implanted polysilicon |
KR101041139B1 (ko) | 2008-11-04 | 2011-06-13 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법 및 그를 포함하는 유기전계발광표시장치 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3967981A (en) * | 1971-01-14 | 1976-07-06 | Shumpei Yamazaki | Method for manufacturing a semiconductor field effort transistor |
US3806365A (en) * | 1971-08-20 | 1974-04-23 | Lee Corp | Process for use in the manufacture of semiconductive devices |
US4149307A (en) * | 1977-12-28 | 1979-04-17 | Hughes Aircraft Company | Process for fabricating insulated-gate field-effect transistors with self-aligned contacts |
JPS559060A (en) * | 1978-07-07 | 1980-01-22 | Yoshitomi Pharmaceut Ind Ltd | Thia(oxa)zolidinecarboxylic acid derivative and its prepatation |
JPS55141767A (en) * | 1979-04-24 | 1980-11-05 | Fuji Xerox Co Ltd | One-dimensional image sensor |
JPS56122130A (en) * | 1980-02-28 | 1981-09-25 | Sharp Corp | Method for forming pattern of thin film transistor |
JPS5793542A (en) * | 1980-12-03 | 1982-06-10 | Hitachi Ltd | Semiconductor integrated circuit device |
JPS57128382A (en) * | 1981-02-02 | 1982-08-09 | Canon Kk | Electrooptical display device |
US4558340A (en) * | 1983-06-29 | 1985-12-10 | Stauffer Chemical Company | Thin film field effect transistors utilizing a polypnictide semiconductor |
JPS58190061A (ja) * | 1982-04-28 | 1983-11-05 | Toshiba Corp | アモルファスシリコン半導体装置 |
JPS59136971A (ja) * | 1983-01-26 | 1984-08-06 | Toshiba Corp | 薄膜電界効果トランジスタの製造方法 |
JPS59165088A (ja) * | 1983-03-11 | 1984-09-18 | 株式会社リコー | 薄膜トランジスタのマトリクス・アレイ |
US4736229A (en) * | 1983-05-11 | 1988-04-05 | Alphasil Incorporated | Method of manufacturing flat panel backplanes, display transistors and displays made thereby |
JPH0682839B2 (ja) * | 1984-08-21 | 1994-10-19 | セイコー電子工業株式会社 | 表示用パネルの製造方法 |
JPH0752776B2 (ja) * | 1985-01-24 | 1995-06-05 | シャープ株式会社 | 薄膜トランジスタおよびその製造法 |
EP0196915B1 (fr) * | 1985-03-29 | 1991-08-14 | Matsushita Electric Industrial Co., Ltd. | Réseau de transistors à couches minces et son procédé de fabrication |
EP0211402B1 (fr) * | 1985-08-02 | 1991-05-08 | General Electric Company | Procédé et structure pour une matrice à transistors à film mince adressant des dispositifs d'affichage à cristaux liquides |
-
1985
- 1985-08-02 US US06/761,938 patent/US4933296A/en not_active Expired - Lifetime
-
1986
- 1986-07-30 EP EP86110555A patent/EP0211401B1/fr not_active Expired
- 1986-08-01 JP JP61180274A patent/JP2637079B2/ja not_active Expired - Lifetime
- 1986-08-01 FR FR868611186A patent/FR2585863B1/fr not_active Expired - Fee Related
- 1986-10-24 DE DE3636221A patent/DE3636221C2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE3636221A1 (de) | 1988-04-28 |
EP0211401A2 (fr) | 1987-02-25 |
FR2585863A1 (fr) | 1987-02-06 |
DE3636221C2 (de) | 1999-12-16 |
JPS6272168A (ja) | 1987-04-02 |
EP0211401B1 (fr) | 1992-05-06 |
US4933296A (en) | 1990-06-12 |
JP2637079B2 (ja) | 1997-08-06 |
EP0211401A3 (en) | 1988-05-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |