FR2543980A1 - Procede de fabrication de materiaux semiconducteurs et four de traitement pour la mise en oeuvre de ce procede - Google Patents
Procede de fabrication de materiaux semiconducteurs et four de traitement pour la mise en oeuvre de ce procede Download PDFInfo
- Publication number
- FR2543980A1 FR2543980A1 FR8401838A FR8401838A FR2543980A1 FR 2543980 A1 FR2543980 A1 FR 2543980A1 FR 8401838 A FR8401838 A FR 8401838A FR 8401838 A FR8401838 A FR 8401838A FR 2543980 A1 FR2543980 A1 FR 2543980A1
- Authority
- FR
- France
- Prior art keywords
- bell
- ingot
- semiconductor material
- mandrel
- heat source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 41
- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 239000000463 material Substances 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 claims abstract description 33
- 238000010438 heat treatment Methods 0.000 claims description 31
- 239000013078 crystal Substances 0.000 claims description 26
- 230000005855 radiation Effects 0.000 claims description 18
- 239000010453 quartz Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 238000001816 cooling Methods 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 229920001296 polysiloxane Polymers 0.000 claims description 2
- 239000000725 suspension Substances 0.000 claims 1
- 230000010354 integration Effects 0.000 abstract description 3
- 230000007547 defect Effects 0.000 description 66
- 238000000137 annealing Methods 0.000 description 32
- 239000008188 pellet Substances 0.000 description 32
- 239000001301 oxygen Substances 0.000 description 22
- 229910052760 oxygen Inorganic materials 0.000 description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 21
- 238000011282 treatment Methods 0.000 description 14
- 230000000694 effects Effects 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000002244 precipitate Substances 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 230000035882 stress Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 239000003826 tablet Substances 0.000 description 3
- 238000007669 thermal treatment Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007937 lozenge Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003228 microsomal effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002688 persistence Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012549 training Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58060757A JPS59190300A (ja) | 1983-04-08 | 1983-04-08 | 半導体製造方法および装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2543980A1 true FR2543980A1 (fr) | 1984-10-12 |
Family
ID=13151461
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8401838A Withdrawn FR2543980A1 (fr) | 1983-04-08 | 1984-02-07 | Procede de fabrication de materiaux semiconducteurs et four de traitement pour la mise en oeuvre de ce procede |
FR8408514A Withdrawn FR2543981A1 (fr) | 1983-04-08 | 1984-05-30 | Procede de fabrication de materiaux semi-conducteurs et four de traitement pour la mise en oeuvre de ce procede |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8408514A Withdrawn FR2543981A1 (fr) | 1983-04-08 | 1984-05-30 | Procede de fabrication de materiaux semi-conducteurs et four de traitement pour la mise en oeuvre de ce procede |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS59190300A (ja) |
KR (1) | KR840008533A (ja) |
DE (1) | DE3413082A1 (ja) |
FR (2) | FR2543980A1 (ja) |
GB (1) | GB2137524A (ja) |
IT (1) | IT1175968B (ja) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61219795A (ja) * | 1985-03-25 | 1986-09-30 | Mitsubishi Metal Corp | 析出核の形成速度が速いシリコン単結晶ウエハおよびその製造法 |
JPS61222999A (ja) * | 1985-03-27 | 1986-10-03 | Dowa Mining Co Ltd | 3−v族化合物半導体単結晶の電気的特性改良方法 |
JPH0787187B2 (ja) * | 1987-08-13 | 1995-09-20 | 古河電気工業株式会社 | GaAs化合物半導体基板の製造方法 |
JPS6472999A (en) * | 1987-09-14 | 1989-03-17 | Nippon Mining Co | Heat treatment of compound semiconductor single crystal |
JPS6472997A (en) * | 1987-09-14 | 1989-03-17 | Nippon Mining Co | Heat treatment of compound semiconductor single crystal |
US5219632A (en) * | 1988-02-24 | 1993-06-15 | Haruhito Shimakura | Compound semiconductor single crystals and the method for making the crystals, and semiconductor devices employing the crystals |
US5209811A (en) * | 1988-03-25 | 1993-05-11 | Shin-Etsu Handotai Company Limited Of Japan | Method for heat-treating gallium arsenide monocrystals |
US5228927A (en) * | 1988-03-25 | 1993-07-20 | Shin-Etsu Handotai Company Limited | Method for heat-treating gallium arsenide monocrystals |
JPH0653639B2 (ja) * | 1988-10-31 | 1994-07-20 | 株式会社ジャパンエナジー | 化合物半導体単結晶の製造方法 |
JPH02263792A (ja) * | 1989-03-31 | 1990-10-26 | Shin Etsu Handotai Co Ltd | シリコンの熱処理方法 |
JPH0633236B2 (ja) * | 1989-09-04 | 1994-05-02 | 新日本製鐵株式会社 | シリコン単結晶の熱処理方法および装置ならびに製造装置 |
JPH04215439A (ja) * | 1990-12-14 | 1992-08-06 | Nikko Kyodo Co Ltd | GaAs単結晶基板の製造方法 |
MY127594A (en) | 1997-04-09 | 2006-12-29 | Memc Electronic Materials | Low defect density, vacancy dominated silicon |
DE69841714D1 (de) | 1997-04-09 | 2010-07-22 | Memc Electronic Materials | Silicium mit niedriger Fehlerdichte und idealem Sauerstoffniederschlag |
EP1090166B1 (en) | 1998-06-26 | 2002-03-27 | MEMC Electronic Materials, Inc. | Process for growth of defect free silicon crystals of arbitrarily large diameters |
CN1313651C (zh) | 1998-10-14 | 2007-05-02 | Memc电子材料有限公司 | 基本无生长缺陷的外延硅片 |
EP1125008B1 (en) | 1998-10-14 | 2003-06-18 | MEMC Electronic Materials, Inc. | Thermally annealed, low defect density single crystal silicon |
US6312516B2 (en) | 1998-10-14 | 2001-11-06 | Memc Electronic Materials, Inc. | Process for preparing defect free silicon crystals which allows for variability in process conditions |
US6858307B2 (en) | 2000-11-03 | 2005-02-22 | Memc Electronic Materials, Inc. | Method for the production of low defect density silicon |
US7105050B2 (en) | 2000-11-03 | 2006-09-12 | Memc Electronic Materials, Inc. | Method for the production of low defect density silicon |
US6689209B2 (en) * | 2000-11-03 | 2004-02-10 | Memc Electronic Materials, Inc. | Process for preparing low defect density silicon using high growth rates |
KR100805518B1 (ko) | 2001-01-26 | 2008-02-20 | 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 | 산화 유도된 적층 결함을 실질적으로 포함하지 않는베이컨시 지배 코어를 갖는 낮은 결함 밀도의 실리콘 |
WO2004003265A1 (ja) * | 2002-07-01 | 2004-01-08 | Sumitomo Titanium Corporation | シリコン単結晶材料とその製造方法 |
MY157902A (en) | 2006-05-19 | 2016-08-15 | Memc Electronic Materials | Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during cz growth |
CN101660209B (zh) * | 2009-06-25 | 2012-05-30 | 南安市三晶阳光电力有限公司 | 一种减少多晶硅铸锭应力的方法和装置 |
CN102094248B (zh) * | 2010-12-31 | 2012-07-11 | 东莞市中镓半导体科技有限公司 | 一种退火装置和方法 |
JP6287462B2 (ja) * | 2014-03-27 | 2018-03-07 | 三菱マテリアル株式会社 | プラズマ処理装置用電極板及びその製造方法 |
US11739437B2 (en) * | 2018-12-27 | 2023-08-29 | Globalwafers Co., Ltd. | Resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1719021B1 (de) * | 1963-07-13 | 1969-09-11 | Siemens Ag | Verfahren zum Verkleinern des Querschnittes eines lotrecht angeordneten Stabes aus Halbleitermaterial |
CH458566A (de) * | 1967-08-14 | 1968-06-30 | Balzers Patent Beteilig Ag | Verfahren und Vorrichtung zum Zonenschmelzen im Vakuum mit Elektronenstrahlbeschuss |
GB1186127A (en) * | 1968-01-05 | 1970-04-02 | Dow Corning | Method and Apparatus for Doping Semiconductors. |
DE1769405B2 (de) * | 1968-05-18 | 1972-08-03 | Battelle-Entwicklungs-Gesellschaft mbH, 6000 Frankfurt | Verfahren zur herstellung von einkristallen aus schmelzbaren stoffen |
JPS5029405B1 (ja) * | 1971-02-06 | 1975-09-23 | ||
US3737282A (en) * | 1971-10-01 | 1973-06-05 | Ibm | Method for reducing crystallographic defects in semiconductor structures |
DE2436490C3 (de) * | 1974-07-29 | 1978-12-07 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zur Phosphor-Dotierung von schwach n-leitenden Siliciumkör- |
GB2080780B (en) * | 1980-07-18 | 1983-06-29 | Secr Defence | Heat treatment of silicon slices |
JPS5750427A (en) * | 1980-09-12 | 1982-03-24 | Ushio Inc | Annealing device and annealing method |
GB2116871B (en) * | 1982-03-16 | 1985-11-13 | Vnii Monokristallov | Apparatus for growing single crystals from a melt using the czochralski method |
-
1983
- 1983-04-08 JP JP58060757A patent/JPS59190300A/ja active Granted
-
1984
- 1984-02-07 FR FR8401838A patent/FR2543980A1/fr not_active Withdrawn
- 1984-02-16 GB GB08404092A patent/GB2137524A/en not_active Withdrawn
- 1984-04-02 KR KR1019840001721A patent/KR840008533A/ko not_active IP Right Cessation
- 1984-04-05 IT IT20408/84A patent/IT1175968B/it active
- 1984-04-06 DE DE19843413082 patent/DE3413082A1/de not_active Withdrawn
- 1984-05-30 FR FR8408514A patent/FR2543981A1/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
IT1175968B (it) | 1987-08-12 |
FR2543981A1 (fr) | 1984-10-12 |
DE3413082A1 (de) | 1984-10-11 |
JPH0453840B2 (ja) | 1992-08-27 |
GB8404092D0 (en) | 1984-03-21 |
KR840008533A (ko) | 1984-12-15 |
JPS59190300A (ja) | 1984-10-29 |
IT8420408A0 (it) | 1984-04-05 |
GB2137524A (en) | 1984-10-10 |
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Legal Events
Date | Code | Title | Description |
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ST | Notification of lapse |