FR2543980A1 - Procede de fabrication de materiaux semiconducteurs et four de traitement pour la mise en oeuvre de ce procede - Google Patents

Procede de fabrication de materiaux semiconducteurs et four de traitement pour la mise en oeuvre de ce procede Download PDF

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Publication number
FR2543980A1
FR2543980A1 FR8401838A FR8401838A FR2543980A1 FR 2543980 A1 FR2543980 A1 FR 2543980A1 FR 8401838 A FR8401838 A FR 8401838A FR 8401838 A FR8401838 A FR 8401838A FR 2543980 A1 FR2543980 A1 FR 2543980A1
Authority
FR
France
Prior art keywords
bell
ingot
semiconductor material
mandrel
heat source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR8401838A
Other languages
English (en)
French (fr)
Inventor
Hirofumi Shimizu
Masato Fujita
Kazuya Suzuki
Fumiaki Hanagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2543980A1 publication Critical patent/FR2543980A1/fr
Withdrawn legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14Heating of the melt or the crystallised materials
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR8401838A 1983-04-08 1984-02-07 Procede de fabrication de materiaux semiconducteurs et four de traitement pour la mise en oeuvre de ce procede Withdrawn FR2543980A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58060757A JPS59190300A (ja) 1983-04-08 1983-04-08 半導体製造方法および装置

Publications (1)

Publication Number Publication Date
FR2543980A1 true FR2543980A1 (fr) 1984-10-12

Family

ID=13151461

Family Applications (2)

Application Number Title Priority Date Filing Date
FR8401838A Withdrawn FR2543980A1 (fr) 1983-04-08 1984-02-07 Procede de fabrication de materiaux semiconducteurs et four de traitement pour la mise en oeuvre de ce procede
FR8408514A Withdrawn FR2543981A1 (fr) 1983-04-08 1984-05-30 Procede de fabrication de materiaux semi-conducteurs et four de traitement pour la mise en oeuvre de ce procede

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR8408514A Withdrawn FR2543981A1 (fr) 1983-04-08 1984-05-30 Procede de fabrication de materiaux semi-conducteurs et four de traitement pour la mise en oeuvre de ce procede

Country Status (6)

Country Link
JP (1) JPS59190300A (ja)
KR (1) KR840008533A (ja)
DE (1) DE3413082A1 (ja)
FR (2) FR2543980A1 (ja)
GB (1) GB2137524A (ja)
IT (1) IT1175968B (ja)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61219795A (ja) * 1985-03-25 1986-09-30 Mitsubishi Metal Corp 析出核の形成速度が速いシリコン単結晶ウエハおよびその製造法
JPS61222999A (ja) * 1985-03-27 1986-10-03 Dowa Mining Co Ltd 3−v族化合物半導体単結晶の電気的特性改良方法
JPH0787187B2 (ja) * 1987-08-13 1995-09-20 古河電気工業株式会社 GaAs化合物半導体基板の製造方法
JPS6472999A (en) * 1987-09-14 1989-03-17 Nippon Mining Co Heat treatment of compound semiconductor single crystal
JPS6472997A (en) * 1987-09-14 1989-03-17 Nippon Mining Co Heat treatment of compound semiconductor single crystal
US5219632A (en) * 1988-02-24 1993-06-15 Haruhito Shimakura Compound semiconductor single crystals and the method for making the crystals, and semiconductor devices employing the crystals
US5209811A (en) * 1988-03-25 1993-05-11 Shin-Etsu Handotai Company Limited Of Japan Method for heat-treating gallium arsenide monocrystals
US5228927A (en) * 1988-03-25 1993-07-20 Shin-Etsu Handotai Company Limited Method for heat-treating gallium arsenide monocrystals
JPH0653639B2 (ja) * 1988-10-31 1994-07-20 株式会社ジャパンエナジー 化合物半導体単結晶の製造方法
JPH02263792A (ja) * 1989-03-31 1990-10-26 Shin Etsu Handotai Co Ltd シリコンの熱処理方法
JPH0633236B2 (ja) * 1989-09-04 1994-05-02 新日本製鐵株式会社 シリコン単結晶の熱処理方法および装置ならびに製造装置
JPH04215439A (ja) * 1990-12-14 1992-08-06 Nikko Kyodo Co Ltd GaAs単結晶基板の製造方法
MY127594A (en) 1997-04-09 2006-12-29 Memc Electronic Materials Low defect density, vacancy dominated silicon
DE69841714D1 (de) 1997-04-09 2010-07-22 Memc Electronic Materials Silicium mit niedriger Fehlerdichte und idealem Sauerstoffniederschlag
EP1090166B1 (en) 1998-06-26 2002-03-27 MEMC Electronic Materials, Inc. Process for growth of defect free silicon crystals of arbitrarily large diameters
CN1313651C (zh) 1998-10-14 2007-05-02 Memc电子材料有限公司 基本无生长缺陷的外延硅片
EP1125008B1 (en) 1998-10-14 2003-06-18 MEMC Electronic Materials, Inc. Thermally annealed, low defect density single crystal silicon
US6312516B2 (en) 1998-10-14 2001-11-06 Memc Electronic Materials, Inc. Process for preparing defect free silicon crystals which allows for variability in process conditions
US6858307B2 (en) 2000-11-03 2005-02-22 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US7105050B2 (en) 2000-11-03 2006-09-12 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US6689209B2 (en) * 2000-11-03 2004-02-10 Memc Electronic Materials, Inc. Process for preparing low defect density silicon using high growth rates
KR100805518B1 (ko) 2001-01-26 2008-02-20 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 산화 유도된 적층 결함을 실질적으로 포함하지 않는베이컨시 지배 코어를 갖는 낮은 결함 밀도의 실리콘
WO2004003265A1 (ja) * 2002-07-01 2004-01-08 Sumitomo Titanium Corporation シリコン単結晶材料とその製造方法
MY157902A (en) 2006-05-19 2016-08-15 Memc Electronic Materials Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during cz growth
CN101660209B (zh) * 2009-06-25 2012-05-30 南安市三晶阳光电力有限公司 一种减少多晶硅铸锭应力的方法和装置
CN102094248B (zh) * 2010-12-31 2012-07-11 东莞市中镓半导体科技有限公司 一种退火装置和方法
JP6287462B2 (ja) * 2014-03-27 2018-03-07 三菱マテリアル株式会社 プラズマ処理装置用電極板及びその製造方法
US11739437B2 (en) * 2018-12-27 2023-08-29 Globalwafers Co., Ltd. Resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1719021B1 (de) * 1963-07-13 1969-09-11 Siemens Ag Verfahren zum Verkleinern des Querschnittes eines lotrecht angeordneten Stabes aus Halbleitermaterial
CH458566A (de) * 1967-08-14 1968-06-30 Balzers Patent Beteilig Ag Verfahren und Vorrichtung zum Zonenschmelzen im Vakuum mit Elektronenstrahlbeschuss
GB1186127A (en) * 1968-01-05 1970-04-02 Dow Corning Method and Apparatus for Doping Semiconductors.
DE1769405B2 (de) * 1968-05-18 1972-08-03 Battelle-Entwicklungs-Gesellschaft mbH, 6000 Frankfurt Verfahren zur herstellung von einkristallen aus schmelzbaren stoffen
JPS5029405B1 (ja) * 1971-02-06 1975-09-23
US3737282A (en) * 1971-10-01 1973-06-05 Ibm Method for reducing crystallographic defects in semiconductor structures
DE2436490C3 (de) * 1974-07-29 1978-12-07 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur Phosphor-Dotierung von schwach n-leitenden Siliciumkör-
GB2080780B (en) * 1980-07-18 1983-06-29 Secr Defence Heat treatment of silicon slices
JPS5750427A (en) * 1980-09-12 1982-03-24 Ushio Inc Annealing device and annealing method
GB2116871B (en) * 1982-03-16 1985-11-13 Vnii Monokristallov Apparatus for growing single crystals from a melt using the czochralski method

Also Published As

Publication number Publication date
IT1175968B (it) 1987-08-12
FR2543981A1 (fr) 1984-10-12
DE3413082A1 (de) 1984-10-11
JPH0453840B2 (ja) 1992-08-27
GB8404092D0 (en) 1984-03-21
KR840008533A (ko) 1984-12-15
JPS59190300A (ja) 1984-10-29
IT8420408A0 (it) 1984-04-05
GB2137524A (en) 1984-10-10

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