FR2543980A1 - PROCESS FOR PRODUCING SEMICONDUCTOR MATERIALS AND PROCESSING FURNACE FOR CARRYING OUT SAID METHOD - Google Patents

Abstract

THE INVENTION CONCERNS A PROCESS FOR MANUFACTURING SEMICONDUCTOR MATERIALS AND A PROCESSING OVEN FOR IMPLEMENTING THIS PROCESS. THIS PROCESS IS CARRIED OUT IN AN OVEN INCLUDING A BELL 1, A CHUCK 7 NOW AN INGOT OF SEMICONDUCTOR MATERIAL 5 BY MEANS OF ITS SPIRM 5A, AND A RADIANT HEAT SOURCE 6 SURROUNDING THE OUTER CIRCUMFERENCE OF THE BELL 5, SUSPENDED INSIDE THE BELL BY CHUCK 7 AND BEING HEATED BY HEAT SOURCE 6, THEN COOLING AT A PREDETERMINED SPEED AND TEMPERATURE. APPLICATION IN PARTICULAR TO THE MANUFACTURE OF HIGH DENSITY OF INTEGRATION MICROPLATELETS.

Description

The present invention relates to a

  semiconductor manufacturing, and more specifically

  firstly the technique of manufacturing a material se-

  conductor with few microscopic defects.

  In the art, the Czochralski method (abbreviated as the

  CZ method) and the floating zone method, as a method

  silicon monocrystal growth dice, which provides

  the main material of a semiconductor device.

  Currently we get most chips or pastil-

  to be used in silicone devices

  such as devices with a high density of

  gration, using the CZ process indicated below.

  Polycrystalline silicon is melted in a crucible

  Quartz set One pulls up a germ immersed in the molten silicon, while driving it in rotation

  relative to the crucible so as to make the crys-

tal.

  Monocrystal ingots obtained by growth

  The growth states and the numbers of the microscopic defects or their nuclei are different in different parts of the body.

  The result is that the inside of chips or micro-

  platelets or pellets, which are prepared by cutting

  in slices of the ingot obtained by means of the CZ process,

  vary in quality These problems are caused

  by the very nature of the CZ process and are inevitable.

  The nuclei of microscopic defects are

  based on impurities such as carbon or metals

  heavy levels (eg gold, iron or copper) or stress concentration centers, which arise as a result of differences in the distribution

  of the temperature in the ingot They are generated in the

  The ingots obtained using the CZ process contain oxygen atoms present in a density of about 1018 atoms / cm 3 This value exceeds the solid solution limit, for example

  3 x 1017 atoms / cm 3 at 1000 ° C Oxygen in excess relative to

  port at the boundary of the solid solution concentrates in the nuclei of microscopic defects thereby producing such microscopic defects in the present

  description, the term microscopic defects applies

  to crystalline defects of a size of several microns or less and includes oxide precipitates, stacking defects, small dislocation loops, etc. The portion of the ingot, which has just been obtained

  by growth, has a remarkably high temperature.

  As a result, oxygen is concentrated at the level of

  nuclei of microscopic defects by provoking

  with a size of 1 to 5 nanometers during growth

this of the crystal.

  The numbers of microscopic defects and their nuclei are larger on the side of the seed (or the upper side) of the ingot than on the opposite side (or

  This is due to the concentration of oxygen

  ne and the concentration of impurities in the ingot, which are due to the segregation factor On the other hand, the

  numbers of microscopic defects and their different nuclei

  during the history of the thermal treatment of the ingot, in a draft furnace, as a result of fluctuations

  temperature at the interface between the

  its liquid and solid during the drawing operation.

  Microscopic defects cause

  Dislocations Microscopic defects and dislocations

  alter the electrical characteristics of the

  positive and lead to a reduction in the productivity of

  In recent years, progress has been made in

  noteworthy in the field of high integration and device performance and the problem of controlling crystal defects caused by microscopic defects

  is one of the most interesting in the field of

  of the process In a device for shooting or

  solid state image recording, for example, the pre-condition

  the presence of crystalline defects leads to the formation of

  white in the image and is the main cause of the

performance.

  In short, a major problem lies in

  in the manufacture of semiconductor devices is that there are many nuclei of microscopic defects in the CZ grown ingot and that there is a large dispersion in the

  nuclei distribution of microscopic defects.

  An object of the present invention is to provide

  a semiconductor manufacturing technique that allows

  to reduce the nuclei of microscopic defects in a

semiconductor material.

  Another object of the present invention is to provide a semiconductor manufacturing technique which

  prevents the formation of cracks in crystals of a

semiconductor material.

  Another object of the present invention is to provide a semiconductor manufacturing technique,

  which makes it possible to distribute the nuclei of the microscopic defects

  spikes uniformly in a semiconductor material.

  Another object of the present invention is to provide a semiconductor manufacturing apparatus which enables the nuclei of microscopic defects to be uniformly reduced and distributed in a material.

semiconductor.

  This problem is solved using a method of manufacturing a semiconductor material, according to the present invention, with the use of a device

  with a bell, a mandrel fixed on the part of the-

  said bell and a heat source disposed around said bell, said method being characterized in that it comprises the operating phases of: a) placing said semiconductor material in said bell by fixing it by clamping in said mandrel, said material semiconductor being an ingot

  monocrystal which is tight at one of these extremes

  and held suspended by said mandrel; b) heating said single crystal ingot by said radiation-type heat source such that the single crystal ingot is heated by the radiant energy emanating from said single crystal ingot; radiant heat source, and

  c) cooling said single crystal ingot.

  An apparatus usable by the implementation of this method is a heat treatment furnace of the type

  vertical section used to anneal a semi-

  conductor and characterized in that it comprises a bell

  intended to receive inside said semi-material

  driver and yes is constituted by a vertical cylinder

  which may have at its upper end

  a lid to seal tightly

  said cylinder, a mandrel for holding said machine

  semiconductor material and mounted on said cover

  re maintaining said semiconductor material suspended within said bell, and a heat source

  radiating around the outer circumference

re of said bell.

  We can say abbreviated to the following with reference to the means indicated above to solve

the problem posed by the invention.

  It is possible to prevent the production of nuclei of microscopic defects (that is, the nuclei of precipitates formed by oxyaene) and cracks in a

  ingot of a semiconductor material by heating this

  got with radiant energy, cooling fast-

  the heated linoleum to bring it to a pre-

  determined and keeping the cooled ingot at a

  predetermined temperature and for a predetermined time interval. Other features and benefits of the

  present invention will emerge from the description given

  hereinafter taken Reference to the attached drawings, on-

  What :. Figure 1 is a flowchart illustrating the conventional operating phases for annealing an ingot; Figure 2 is a graph illustrating the

  relationship between the deformation of a tablet or microplate

  quette and density of microscopic defects;

  Figure 3 is a graph showing the

  between the deformation of a pellet under the effect of a thermal treatment affixed and the density of the microscopic defects;

  Figure 4 is a graph showing the

  between the density of microscopic defects and the

  deformation of a pellet under the effect of another treatment

  forced thermal insulation; Figure 5 is a flowchart illustrating the annealing operating phases of an ingot according to the present invention;

  FIG. 6 is a diagrammatic section illustrating

  an embodiment of a manufacturing apparatus

  semiconductor circuit according to the present invention; and Figure 7 is a diagram illustrating the

  temperature programs for the operational phase of

  cooked and for the rapid cooling

  according to the present invention.

  We will describe below the forms of realization

preferred embodiment of the invention.

  The authors of the present invention carried out the following two experiments concerning the

microscopic defects.

  In the first experiment, we examined how the nuclei of microscopic defects are

  modified by the traditional treatment of annealing of the linoots.

  This ingot annealing treatment is carried out in order to reduce resistivity dispersions in the direction of growth and in the section of the

  ingot which corresponds to a lozenge, thanks to an elimination

  Oxyhene donors in the ingot The donors

  of oxygen appear at 450 ° C and disappear at 600 ° C.

  This is why the traditional treatment of annealing

  gots is carried out in a temperature range between 600 and 6500 C. The conventional annealing of the ingots follows the procedure illustrated in Figure 1 is placed in a nacelle an ingot separated from a seed is then subjected to annealing the ingot in a non-oxidizing atmosphere at

  inside a horizontal type heat treatment furnace

zontal.

  Comparisons were made for temperatures

  annealing annealing at 600 ° C, 6500 ° C and 7000 ° C. It has been found that the density of the defects of the pellet is greater for

  a higher annealing temperature was also found

  that the conventional treatment of annealing ingots favors

  make the production of nuclei of microscopic defects.

  In addition, it has been found that

  ingot annealing is not desirable when

  that the ingot has a diameter of 125 mm or more

  This is due to the fact that the ingot is so massive that it appears

  high internal stresses and that it is necessary to

  The annealing ingot should be cooled rapidly in the air at a rate of 50 to 80 OC / min in order to reduce the rate of change. of resistivity However, we can not

  adopt this fast cooling treatment being given

  born that cracks appear in the ingot.

  The relationship between the deformation of the

  and the density of microscopic defects was studied.

  during the second experiment.

  Figure 2 shows the relationship between defor-

  100 mm diameter pellets and the density of the microscopic defects These pellets are in fact formed of complementary MOSFET transistors by means of

  The process says at 5 gm In Figure 2, we see that the de-

  formation of the pellet increases when the density of

microscopic defects increases.

  The deformation of the pellets was measured after the source and drain regions of the MOSFET transistors

  have been formed Measurements of deformation have been made

  made using the laser interference method.

  On the other hand, we measured the density of

  microscopic defects using the conventional method

  The pellets are oxidized at 1000.degree. C. for 16 hours, polished to a depth of 40 microns causing them to be microscopic in the core of the pellet.

  polished, and subjected to a chemical attack.

  that using Wright's corrosive liquid for minutes counts the number of defects in predetermined positions and convert that number to

  obtain apparent densities (number / cm 3) -

  If the deformation exceeds 70 microns, the transfer accuracy of the mask to the tablet model

  during the operative phase of photolithography is re-

  same process for the name process, so that

  the formation of the elements is correspondingly reduced.

  The density of the microscopic defects must be equal to or less than 5 x 10 cm 3 Even if the density of the microscopic defects is increased in order to obtain the intrinsic getter effect, densities higher than 5 x 109 cm 3 increase the harmful effect of reducing performance, and this until the effect of getter

be lost.

  From now on it is necessary to reduce the de-

  training as one realizes degrees of

more important.

  Figures 3 and 4 illustrate the relationship between

  the deformation of the pellets and the density of the defects

  microscopic The pellets used are not

  with any device Measuring processes

  deformations of the pellets according to the di-

  metric and microscopic defects densities are the

  same as those used in Figure 2.

  In the case of the experiments considered, the initial deformations of the pellets are subtracted from

  those obtained after the respective heat treatments.

  Initial deformations are produced when the lineage

  Got cut and have a maximum size of about 25 microns It follows that the deformationsindicate the net values that are due to an elastic deformation

  appearing during heat treatment.

  In the examples shown in the figures

  3 and 4, the pellets forming part of the first

  The pre-heating is carried out at 800 ° C. in a dry O 2 atmosphere for 2 hours and then at 1000 ° C.

  in an oxidizing atmosphere for 16 hours.

  temperature increase to 8000 C increases the probability of produc-

  of nuclei of microscopic defects The last treat-

  heat at 1000 ° C tends to produce deformations

  miscropics and promotes the production of microscopic defects.

  in the same way as is the case in the current process for forming the devices. The pellets of the second group are only subjected to

  10000 C The pellets of the third group are not

  no heat treatment, but are presented

for comparison purposes.

  In the example shown in FIG.

  we submit the pellets that are part of the first and se-

  cond groups to a first forced heat treatment or

  imposed in such a way as to make possible an assessment of the

  In a specific way, pellets are available

  vertically in a nacelle while being at a distance of

  5 mm The pod equipped with pellets is placed in the quartz tube of the horizontal type heat treatment furnace. The quartz tube has an internal diameter of 150 mm and its internal temperature is 1000 ° C.

  leave the pellets in the quartz tube during a

  20 minutes, then removed. The nacelle is inserted into the quartz tube and removed at a

  cm / min, using an automatic loading device

  than. In the example shown in FIG. 4, the pellets of the first and of the second groups are subjected to a first forced or imposed heat treatment with a view to

  to allow the evaluation of the deformations, then to a

  This forced second heat treatment is identical to the first, except that the speed of the nacelle is 35 cm / min The stresses appearing in the pellets are higher in the

  case of the second forced heat treatment.

  The dashed lines in Figures 3 and 4 show the results that were obtained with the comparison and sampling pellets.

  ingot in different growth conditions.

  Considering Figures 3 and 4 the following effect has been established: The deformations are proportional to

  the density of the microscopic defects

  reasons for the pellets of the first and second groups and

  comparisons of Figures 3 and 4, it has been found that the densi-

  microscopic defects increase and that deformities

  These are more likely to occur in the case where the number of thermal treatments in the process is different.

  where a higher thermal stress is applied to them.

  These trends, whether charged or not, can be found in

what a pellet.

  The density of the microscopic defects varies according to the temperature of the heat treatment of the semiconductor material This variation is caused

  by altering the oxygen content in the crys-

  The microscopic defects cause dislocations.

  These dislocations increase when the density of the microscopic defects increases.

  critical, from which offsets or

  formed in the surface of the tablet by the concentration

  multiple dislocations, is reduced

  with a higher density of microscopic defects

  These peaks are subject to shifts and deformations during heat treatments during the LSI high density manufacturing process. This reduces the accuracy of model transfer from the masks to the pellets during the photolithographic operating phase. This implies that the formation of the nucleus and the growth of the mieroscopic defects and the probability of the appearing offsets are different if the

oxygen in the crystal.

  The deformations produced by a thermal stress strongly depend on the quality of the single crystal,

  and in particular the precipitation of oxygen (i.e.

  say the density of microscopic defects).

  In order to reduce the thermal stress

  as for the deformations, the so-called Ramping process is used during the heat treatment carried out during the treatment of the element. According to the experiments made by the author of the present invention, if the method of Ramping is used in at a temperature between 800 and 900 QC, the nuclei of the oxygen precipitates are

  to be produced and the microscopic defects are -

  likely to grow so that the mechanical resistance

  that crystal is reduced.

  As a result, it is required to use such a uniform crystal so that the oxygen is not precipitated even under the effect of the heat treatment, and that a small number of nuclei of microscopic defects are produced. 5 is a flowchart illustrating

  procedures implemented by a manufacturing process

  According to the present invention, the ingot of silicon monocrystal, which has been

  prepared according to the CZ process, is placed in an oven of

  cooked, as shown in Figure 6, without it having been

  separated from its germ The handling of the ingot is effected

  killed in a state in which all parts of the seed are kept tight in suspended positions by means of a mandrel The ingot is annealed in the oven of

  annealed in accordance with the temperatureprogrammes

see Figure 7.

  FIG. 6 is a schematic view showing an embodiment of the apparatus for manufacturing

  semiconductors according to the present invention.

  The annealing heat treatment furnace

* follows a vertical structure, which is formed by a clo

  transparent quartz 1 This bell 1 is closed at its upper part by means of a lid 2

  a vertical type oven to prevent the body from

  Got come into contact with the device.

  We fill the quartz bell 1 from

  of an admission of gas 3 with a gas forming an atmosphere

  non-oxidizing, i.e. an inert gas such as azo

  te or argon Before introducing the gas, empty the clo-

  1 to form a high vacuum by means of a vacuum pump 11 The bell is shaped so as to have a contour similar to that of a linolina 5.

  that the gas be uniformly distributed.

  The ingot 5, consisting of a mono-

  Silicon crystal, in the quartz bell 1 The ingot 5 is fixed by clamping above the quartz bell 1 by means of a mandrel 7 so that it can rotate

  a speed between 0 and 30 rpm

  a seed 5a above the ingot 5 Therefore the seed 5a is not separated by cutting the ingot which undergoes

  the phenomenon of growth, and this is one of the characteristics

  of the present embodiment the mandrel 7

maintain the seed germ 5 a.

  The body of the ingot, that is to say the part of

  be put in the form of pellets is maintained at

  away from any contact with the appliance The pol-

  existing luminaires on the inner wall of the bell 1 are kept away from the ingot.

  small crack on the surface of the ingot, even under the ef-

  of mechanical contact stress.

  a change in the temperature of the ingot under the effect of the heat transfer from the contact parts in

  direction of the apparatus That is why the outer face

  the ingot does not take part in the production of microscopic defects, cracks and pollutants in

  the body of the ingot One can control the microsomal defects

  picks by simply ordering the annealing temperature.

  The mandrel 7 is connected to a pulley 9 which

  in turn is coupled to a motor 10 by means of a

  non-reference channel The ingot is rotated to keep the temperature uniform and

25.43980

  its variation in the respective parts located in

the ingot.

  In the apparatus according to the present invention, a radiant heat source is used as a source of annealing heat. This radiant heat source is constituted by infrared radiation lamps 6.

  infrared radiation lamps 6 are arranged on the outside.

  More specifically, the infrared lamps 6 are arranged not only in the portions shown in FIG. 6, but also throughout the space surrounding the outside of the quartz bell.

  Bell 1, at identical distances.

  infrared lamps 6 are covered by

  Reflecting mirrors 4, so that the infrared rays emitted by the infrared radiation lamps 6

  can completely reach the inside of the bell 1.

  The infrared lamps 6 and the mirrors

  4 are mounted on a support plate 8.

  The infrared radiation lamps 6 are connected to a

  power supply source 12 A temperature sensor

  it is arranged in the bell 1 being interposed between the ingot 5 and the infrared radiation lamps 6 The control unit 13 constituted by a microprocessor,

  controls the power source 12 as a function of

  of the information delivered by the temperature sensor.

  Under the effect of this power supply command

  energy 12, the ingot 5 can be heated and cooled down

  quickly at the desired temperatures. The source of food

  12 is constituted by a thyristor

  seems radiation formed by infrared rays can

  be controlled by a disconnection either complete or

  of the power supply source 12, either by limiting the current sent to the power source in

energy 12.

  Thanks to the heat treatment carried out by

  radiation, it is possible to heat the ingot without

  The result is that none of the pollutants

  mechanical stresses and temperature imbalances, which have been indicated above and, if not, can be caused by contact with the apparatus, do not appear.

  allows to control the temperature of the ingot more convenient

  This is due in part to the fact that the heat transfer is carried out by the radiation and partly because the outgoing calories (from the radii

  infrared sensors can be precisely controlled and

  pide. We will describe below the case where the ingot of

  silicon monocrystal must be annealed.

  The ingot 5, which is supported in the non-contact state in the quartz bell 1, as shown in FIG. 6, is rotated. In this state, the ingot 5 is heated to a temperature between 1200 and 1350 ° C. for example and is maintained for 1 to 16

  hours in the infrared rays delivered by the

  It is desirable to have a higher heating temperature in order to improve

  the annealing effect If the melting point of the semi-

  conductor is desired by T, the annealing temperature de-

  Si is between 0.85 T and 0.95 T In the case of silicon, the annealing temperature must be higher than

  12000 C and should be equal, ideally at 1300 'C + 50' C.

  FIG. 7 shows the example of the case where the ingot is fired at 12000.degree. C. and at 1350.degree. C. The ingot is heated to 1200.degree.

  for 1 to 8 hours or at 1350 ° C for 0.5 to 3 hours.

  Most of the causes of formation of microscopic defects nuclei in the ingot are suppressed by means of this annealing treatment. The precipitates of 1 to nanometers, which are formed by the growth of the ingot,

  are eliminated The center of the concentration of con-

  in the ingot as a result of the difference in

  temperature distribution is also removed.

  As a result, the distributions of impurities such as

  that the carbon or heavy metals, nuclei of microscopic defects remaining in the ingot even after the annealing treatment, and de-oxygen are

  made uniform inside the ingot.

  If the ingot is subjected to annealing at 1300 ° C for about 16 hours, the oxygen content in the ingot can be reduced from 1018 atoms / cm 3 to

  8 x 1017 atoms / cm 3 by diffusion of oxygen to the ex-

* inner ingot.

  After the annealing treatments carried out at these temperatures during the predetermined periods,

  the outgoing heat delivered by the radiation lamps

  infrared 6 & -decreased by producing a cooling

  Fast ingot of the ingot The temperature programs

  for this rapid cooling treatment are illus-

very much in figure 7.

  First, the ingot is cooled to approximately

  1100 ° C from annealing temperatures to one

  10 to 15 OC / min Then, the ingot of

  then about 1100 ° C to about 300 ° C at a speed

  25 to 100 ° C / min The rate of temperature decrease

  per minute can be precisely controlled by controlling the total radiation provided by

  infrared ravons, as described above

  The temperatures shown here are the values that are detected by the temperature sensor 14, i.e. the temperatures present in the bell.

  The actual temperatures of the ingot 5 are lightly

  The ingot temperature varies with the temperature present in the bell 1 A small number of nuclei of microscopic defects are produced at temperatures exceeding

  10000 C The lincot is cooled slowly so that

  miter side effects such as cracks provocated

  by the cooling operation.

  The production of nuclei of microscopic defects is favored by temperatures below 11000 C. In order to suppress this production of nuclei of

  microscopic defects quickly cool the lincot.

  If the ingot is rapidly cooled from 11000 C to 65000 C, a new appearance of the nuclei can be prevented.

  microscopic defects Oxygen donors are pro-

  In order to suppress this production of nuclei of microscopic defects, the ingot is also rapidly cooled in this temperature range. This makes it possible to prepare an ingot having a few defect nuclei.

  microscopic and some oxygen donors.

  The temporary maintenance phase at

  3000 C is implemented in order to prevent the

  had the effect of cracking under the effect of the thermal stress

  that during the rapid cooling phase. This can be done at any temperature below about 3800 C. In the present embodiment, the

  ingot is maintained at 300 ° C in order to guarantee the

  pressure of a new production of oxygen donors

  born. At temperatures below 300 ° C, the ingot can be further rapidly cooled down

  predetermined interval of time.

  coldness in this case may be different than

  fast two-phase cooling, mentioned previously

cédemment.

  In accordance with the present form of

  In this case, the silicon monocrystal ingot 5 can be annealed at elevated temperatures in a non-contact state. This melts the nuclei of the microscopic defects (i.e., the nuclei of the precipitates).

  of oxygen), which are produced during the growth of the

  nocrystal and during the course of: heat treatment in the oven, without fear of pollution. Thanks to the radiant heating system using infrared lamps 6, it is also possible to cool the crystal faster than in the resistance heating system.

  that it is possible to delete during the operational phase

  cooling, the excess oxygen that produces

  the appearance of nuclei of microscopic defects.

  The pellets, which are separated by

  of the single crystal ingot 5 and subjected to polishing.

  ge providing a brilliant polish, hardly capture oxygen precipitates even after the manufacturing process

  high density of interest This remarkably reduces

  the production of small defects of dislocation and

  lack of stacking under the effect of oxidation.

  While an ordinary crystal has a concentration of microscopic defects of between 107

  and 108 atoms / cm 3, the pellets manufactured according to the

  according to the present invention have a den-

  microscopic flaws of up to 105 atoms /

  cm 3 During the time interval where the temperature of the pro-

  given high density manufacturing integration falls to

  a lower level and during which the crystal is used

  under more difficult conditions, the present form

  of achievement is remarkably useful.

  After the annealing phase, illus-

  shown in Figure 7, we can again make a re-

  baked ingot at 6000 C This annealing phase

  additional measure is implemented with a view to

  Persistence of resistance in different parts of the ingot This is related to the fact that, although the oxygen donors are largely eliminated by means of the

  present embodiment, some oxygen donors

  are still produced as a result of the heat treatment

  than at a temperature of between 400 ° C and 600 ° C.

  An annealed ingot according to the present invention has remarkably few nuclei of microscopic defects (i.e., the nuclei of the oxygen precipitates), so that one can manufacture

  a semiconductor element having excellent characteristics

  characteristics and at a high efficiency.

  Cracking can be prevented in the

  ingot by means of a rapid cooling of this

  deny at a predetermined temperature after the operational phase

  annealing process, and by holding the ingot at a predetermined temperature for a period of

predetermined time.

  Although the present invention has been

  specifically written in relation to the forms of

  made by the author, it is not

  to the previously mentioned embodiments

  but can be naturally modified from different

  without departing from the scope of protection of the invention. For example, you can change the speed of

  In particular, it is possible to modify

  Prove the speed from 10 'C to 15' C / min

  as shown in Figure 7 This can be modified

  the speed of 25 to 100 'C / min unless there is a risk of defection of the ingot, or we can cool the

  ingot at a relatively slow speed of 5 to 100 C / min.

  The annealing treatment illustrated in the

  Figure 7 may be applied not only to the ingot, but

  also to sliced pellets In this

  Alternatively, the pellets may not be preserved.

  in a state where they do not contact the apparatus, so that this variant is less advantageous for the purpose of suppressing the production of microscopic defects and pollution, than the case in which the ingot itself

I am required.

  In addition, hydrogen and oxygen can be used as atmospheric gases for

of the annealing treatment.

  In addition to infrared radiation lamps, high frequency coils or electromagnetic waves may be used as the radiant heat source.

  1 O other than infrared radiation.

  The end portion of the ingot 5 on the side of the seed 5a can be clamped and held by means of

  of a quartz frame This variant of the

  yielded when the seed 5a is broken and separated from the ingot 5.

  Nevertheless, with regard to the treatment phase of

  This process is less advantageous than the case where the annealing of the ingot 5 is carried out taking

ingot 5 a.

  The description, which has just been made, con-

  the case where the present invention is applied to the annealing phase of a monocrystal ingot of

  silicon and provides the background of the field of applica-

  of the present invention, however, the present invention

  tion is not intended to be limited to this case, but

  be applied to any semiconductor of

  III-V of the periodic table of elements,

  such as gallium-arsenic (Ga-As) or gallium-phospho-

  re (Ga-P) or a semiconductor of groups II-V The time

  desired annealing temperature in this case is between

  0.85 Tk and 0.95 Tk (Tk designating the melting point).

Claims (11)

CLAIMS I A method for producing a semiconductor material by use of an apparatus comprising a bell (1), a mandrel (7) attached to a portion of said bell and a heat source (6) disposed around the circumference exterior of said shell (1) 9 characterized in that it comprises the operating steps of (a) placing said semiconductor material (5) in said bell (1) by clamping it in said mandrel (7) 9 said semiconductor material ( 5) being a single crystal ingot having one end clamped and held in suspension by said mandrel (7) 9 (b) heating said single crystal ingot (5) by said heat source (6) 9 which is of the radiation type, such that said single crystal ingot is heated by the radiant energy emanating from said radiant heat source 9 and (c) cooling said monocrystalline ingot   2 Process for manufacturing a semiconducting material   A reactor according to claim 1 characterized in that said single crystal ingot (5) is cooled by means of a control of said radiant heat source (6) or said operating phase (c) o   3 Process for manufacturing semiconductor material   A nozzle according to claim 29, characterized in that said end of said monocrystal ingot (5) is located on the side of the seed (Sa) 0   4 Process for producing a semicon-   A conductor according to claim 39, characterized in that said single crystal ingot (5) is joined to a seed crystal (5a) and clamped to said seed crystal by said mandrel (7). semiconductor material according to claim 2, characterized in that said radiant heat source (6) comprises a   plurality of infrared radiation lamps.   6 Process for manufacturing a semiconducting material   A reactor according to claim 5, characterized in that said single-crystal ingot (5) is cooled during said operating phase (c) by controlling the electric currents flowing in said infrared lamps (6).   7 Process for manufacturing a semiconducting material   A reactor according to claim 2, characterized in that said bell (1) is filled with a non-oxidizing atmosphere.   8 Process for producing a semiconducting material   according to claim 2, characterized in that   said single crystal ingot (5) consists of silicone cium.   9 Process for manufacturing a semiconducting material   according to claim 8, characterized in that said single crystal ingot (5) has a diameter of 125 mm or more.   For heat treatment of the vertical type,   to anneal a semiconductor material   conductor, characterized in that it comprises: a bell (1) serving to house said semiconductor material (5) in its interior, said bell being formed by a hollow vertical cylinder which may comprise, at its upper part, a cover (2 ) which hermetically seals said cylinder, a mandrel (7) for holding said semiconductor material in said bell, said mandrel being mounted   on said lid (2) so as to maintain said material   semiconductor material suspended within said bell (1), and a radiant heat source (6) disposed around   the outer circumference of said bell. 2,54398 O   11 vertical type heat treatment furnace according to claim 10, characterized in that said radiating heat source (6) comprises a plurality of infrared radiation lamps and said bell (1) is constituted by transparent quartz. Vertical-type heat treatment furnace according to claim 1, characterized in that said infrared radiation lamps (6) are arranged around the outer circumference of said bell (1) and at   a predetermined spacing from each other.   Vertical-type heat treatment furnace according to Claim 12, characterized in that the said infrared radiation lamps (6) comprise, on their rear face, reflecting mirrors (4) so that the majority of the infrared rays emitted by said infrared radiation lamps can be directed to said bell (1).   14 vertical type heat treatment furnace according to claim 10, characterized in that said bell (1) has a contour similar to that of a   ingot (5) of said semiconductor material.   Vertical type heat treatment furnace according to claim 10, characterized in that said mandrel (7) is rotatable.