FR2455480A1 - Moyens pour la fabrication de silicium monocristallin sous la forme d'un ruban - Google Patents

Moyens pour la fabrication de silicium monocristallin sous la forme d'un ruban

Info

Publication number
FR2455480A1
FR2455480A1 FR7911174A FR7911174A FR2455480A1 FR 2455480 A1 FR2455480 A1 FR 2455480A1 FR 7911174 A FR7911174 A FR 7911174A FR 7911174 A FR7911174 A FR 7911174A FR 2455480 A1 FR2455480 A1 FR 2455480A1
Authority
FR
France
Prior art keywords
tape
manufacture
crystal silicon
silicon
melted zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7911174A
Other languages
English (en)
French (fr)
Other versions
FR2455480B1 (enExample
Inventor
Huguette Rodot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bpifrance Financement SA
Original Assignee
Agence National de Valorisation de la Recherche ANVAR
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agence National de Valorisation de la Recherche ANVAR filed Critical Agence National de Valorisation de la Recherche ANVAR
Priority to FR7911174A priority Critical patent/FR2455480A1/fr
Priority to US06/144,574 priority patent/US4309239A/en
Priority to JP5800780A priority patent/JPS55149189A/ja
Priority to DE19803017016 priority patent/DE3017016A1/de
Publication of FR2455480A1 publication Critical patent/FR2455480A1/fr
Application granted granted Critical
Publication of FR2455480B1 publication Critical patent/FR2455480B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C30B15/16—Heating of the melt or the crystallised materials by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/06—Non-vertical pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique
    • Y10S117/904—Laser beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/905—Electron beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)
  • Silicon Compounds (AREA)
  • Photovoltaic Devices (AREA)
FR7911174A 1979-05-03 1979-05-03 Moyens pour la fabrication de silicium monocristallin sous la forme d'un ruban Granted FR2455480A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR7911174A FR2455480A1 (fr) 1979-05-03 1979-05-03 Moyens pour la fabrication de silicium monocristallin sous la forme d'un ruban
US06/144,574 US4309239A (en) 1979-05-03 1980-04-28 Method and means for manufacturing mono-crystalline silicon in tape form
JP5800780A JPS55149189A (en) 1979-05-03 1980-05-02 Tape shape silicon single crystal manufacturing method and device
DE19803017016 DE3017016A1 (de) 1979-05-03 1980-05-02 Verfahren und vorrichtung zur herstellung von monokristallinem silicium in bandform

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7911174A FR2455480A1 (fr) 1979-05-03 1979-05-03 Moyens pour la fabrication de silicium monocristallin sous la forme d'un ruban

Publications (2)

Publication Number Publication Date
FR2455480A1 true FR2455480A1 (fr) 1980-11-28
FR2455480B1 FR2455480B1 (enExample) 1985-03-29

Family

ID=9224973

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7911174A Granted FR2455480A1 (fr) 1979-05-03 1979-05-03 Moyens pour la fabrication de silicium monocristallin sous la forme d'un ruban

Country Status (4)

Country Link
US (1) US4309239A (enExample)
JP (1) JPS55149189A (enExample)
DE (1) DE3017016A1 (enExample)
FR (1) FR2455480A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2570088A1 (fr) * 1984-09-12 1986-03-14 Us Energy Appareil et procede pour faire croitre horizontalement, sans creuset, des cristaux de silicium en feuille

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0040488A1 (en) * 1980-05-15 1981-11-25 International Business Machines Corporation Method of fabricating a ribbon structure
US4515650A (en) * 1980-05-15 1985-05-07 International Business Machines Corporation Method for producing large grained semiconductor ribbons
US4383130A (en) * 1981-05-04 1983-05-10 Alpha Solarco Inc. Solar energy cell and method of manufacture
DE3132776A1 (de) * 1981-08-19 1983-03-03 Heliotronic Gmbh Verfahren zur herstellung grob- bis einkristalliner folien aus halbleitermaterial
US4468279A (en) * 1982-08-16 1984-08-28 Avco Everett Research Laboratory, Inc. Method for laser melting of silicon
US5205997A (en) * 1989-07-31 1993-04-27 Grumman Aerospace Corporation Ampoule for crystal growth
US5454879A (en) * 1994-03-17 1995-10-03 Bolger; Stephen R. Helically grown monolithic high voltage photovoltaic devices and method therefor
DE10311893B3 (de) * 2003-03-18 2004-10-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zur grossflächigen Herstellung von Solarzellen
US7976629B2 (en) * 2008-01-01 2011-07-12 Adam Alexander Brailove Crystal film fabrication
US9404198B2 (en) * 2012-07-30 2016-08-02 Rayton Solar Inc. Processes and apparatuses for manufacturing wafers
US9499921B2 (en) 2012-07-30 2016-11-22 Rayton Solar Inc. Float zone silicon wafer manufacturing system and related process
JP7720080B2 (ja) * 2021-08-11 2025-08-07 株式会社クリスタルシステム 薄板状単結晶製造装置および薄板状単結晶製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2633961A1 (de) * 1975-07-28 1977-02-17 Mitsubishi Metal Corp Verfahren zum zuechten eines duennen kristallbands
FR2387080A1 (fr) * 1977-04-14 1978-11-10 Westinghouse Electric Corp Procede de production de monocristal de silicium avec un element de chauffage a arc

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2649223C2 (de) * 1976-10-28 1983-02-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von einkristallinen Halbleitermaterialbändern durch senkrechtes Ziehen aus einem Schmelzfilm

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2633961A1 (de) * 1975-07-28 1977-02-17 Mitsubishi Metal Corp Verfahren zum zuechten eines duennen kristallbands
FR2387080A1 (fr) * 1977-04-14 1978-11-10 Westinghouse Electric Corp Procede de production de monocristal de silicium avec un element de chauffage a arc

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2570088A1 (fr) * 1984-09-12 1986-03-14 Us Energy Appareil et procede pour faire croitre horizontalement, sans creuset, des cristaux de silicium en feuille

Also Published As

Publication number Publication date
JPS55149189A (en) 1980-11-20
DE3017016A1 (de) 1980-11-20
FR2455480B1 (enExample) 1985-03-29
US4309239A (en) 1982-01-05

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Legal Events

Date Code Title Description
ST Notification of lapse