JPS6450410A - Manufacture of semiconductor single crystal layer - Google Patents
Manufacture of semiconductor single crystal layerInfo
- Publication number
- JPS6450410A JPS6450410A JP20626887A JP20626887A JPS6450410A JP S6450410 A JPS6450410 A JP S6450410A JP 20626887 A JP20626887 A JP 20626887A JP 20626887 A JP20626887 A JP 20626887A JP S6450410 A JPS6450410 A JP S6450410A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon
- single crystal
- layer
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To make it possible to form a silicon single crystal layer on an insulating film without thermal damage to a silicon substrate, by forming a metal film, whose heat conductivity is larger than that of a protective film, on the protective film formed on a silicon film to be formed into a single crystal, and discharging heat from fused silicon into the metal film when a silicon layer is fused. CONSTITUTION:An SiO2 film 11 is deposited on a single crystal Si substrate 10. A polycrystalline Si film 13, and an SiO2 film are further deposited. A metal material, whose heat conductivity is larger than that of the SiO2 film 14, e.g., an Al film 15, is deposited. An SiO2 film 16 is deposted thereon. When an electron beam 20 is projected on the film 16 and scenned, the beat from the fused Si layer flows out in the lateral direction through the Al film 15. Therefore, the decrease in solidifying speed of the fuzed Si layer can be prevented. The beam scanning speed can be made to agree with the solidifying speed of the silicon layer. Thus, a single crystal silicon layer can be formed in an insulating film without damage on the silicon substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62206268A JPH0834176B2 (en) | 1987-08-21 | 1987-08-21 | Method for manufacturing semiconductor single crystal layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62206268A JPH0834176B2 (en) | 1987-08-21 | 1987-08-21 | Method for manufacturing semiconductor single crystal layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6450410A true JPS6450410A (en) | 1989-02-27 |
| JPH0834176B2 JPH0834176B2 (en) | 1996-03-29 |
Family
ID=16520514
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62206268A Expired - Lifetime JPH0834176B2 (en) | 1987-08-21 | 1987-08-21 | Method for manufacturing semiconductor single crystal layer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0834176B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102538146B1 (en) * | 2021-09-07 | 2023-05-30 | (주)알엔알랩 | Method of forming epitaxial semiconductor layer and method of manufacturing semiconductor device using the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61113229A (en) * | 1984-11-08 | 1986-05-31 | Agency Of Ind Science & Technol | Manufacture of semiconductor thin film crystal layer |
| JPS61160924A (en) * | 1985-01-09 | 1986-07-21 | Agency Of Ind Science & Technol | Manufacture of semiconductor thin film crystal layer |
-
1987
- 1987-08-21 JP JP62206268A patent/JPH0834176B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61113229A (en) * | 1984-11-08 | 1986-05-31 | Agency Of Ind Science & Technol | Manufacture of semiconductor thin film crystal layer |
| JPS61160924A (en) * | 1985-01-09 | 1986-07-21 | Agency Of Ind Science & Technol | Manufacture of semiconductor thin film crystal layer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0834176B2 (en) | 1996-03-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |