JPS64720A - Manufacture of single crystal thin-film - Google Patents

Manufacture of single crystal thin-film

Info

Publication number
JPS64720A
JPS64720A JP15446187A JP15446187A JPS64720A JP S64720 A JPS64720 A JP S64720A JP 15446187 A JP15446187 A JP 15446187A JP 15446187 A JP15446187 A JP 15446187A JP S64720 A JPS64720 A JP S64720A
Authority
JP
Japan
Prior art keywords
single crystal
film
section
crystal silicon
crystal thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15446187A
Other languages
Japanese (ja)
Other versions
JPH0795525B2 (en
JPH01720A (en
Inventor
Toshiaki Miyajima
Masayoshi Koba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP62154461A priority Critical patent/JPH0795525B2/en
Publication of JPS64720A publication Critical patent/JPS64720A/en
Publication of JPH01720A publication Critical patent/JPH01720A/en
Publication of JPH0795525B2 publication Critical patent/JPH0795525B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

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  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE: To obtain a single crystal thin-film, a crystal orientation of which coincides with that of a single crystal substrate, by leaving a region, in which the single crystal thin film as species is brought into contact directly with a single crystal thin-film in the lower layer of the single crystal thin-film or the single crystal substrate, when the single crystal thin-film as species is patterned.
CONSTITUTION: An SiO2 film 7 is formed onto a single crystal silicon film 61 through a normal CVD method, and only a section from which the single crystal silicon film 61 must be exposed is patterned through a normal photolithographic method, thus shaping an opening section 6a. A polycrystalline silicon film 8 and an SiO2 film 9 are formed onto the opening section 6a, a region in which the upper section of the single crystal silicon film 61 is brought into contact directly with an exposed section 1a in a single crystal silicon substrate 1 is scanned with argon laser beams 10 up to other regions, and a melting section 11 is solidified in the direction of the arrow 13. That is, the polycrystalline silicon film 8 is changed into a single crystal, and a single crystal silicon film 12, a crystal orientation of which coincides with the single crystal silicon substrate 1, is acquired. Regions up to the region of the single crystal silicon substrate 1a are melted at that time.
COPYRIGHT: (C)1989,JPO&Japio
JP62154461A 1987-06-23 1987-06-23 Method for manufacturing single crystal thin film Expired - Lifetime JPH0795525B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62154461A JPH0795525B2 (en) 1987-06-23 1987-06-23 Method for manufacturing single crystal thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62154461A JPH0795525B2 (en) 1987-06-23 1987-06-23 Method for manufacturing single crystal thin film

Publications (3)

Publication Number Publication Date
JPS64720A true JPS64720A (en) 1989-01-05
JPH01720A JPH01720A (en) 1989-01-05
JPH0795525B2 JPH0795525B2 (en) 1995-10-11

Family

ID=15584747

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62154461A Expired - Lifetime JPH0795525B2 (en) 1987-06-23 1987-06-23 Method for manufacturing single crystal thin film

Country Status (1)

Country Link
JP (1) JPH0795525B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007120601A (en) * 2005-10-27 2007-05-17 Honda Motor Co Ltd Centrifugal clutch

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5853821A (en) * 1981-09-25 1983-03-30 Toshiba Corp Preparation of laminated semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5853821A (en) * 1981-09-25 1983-03-30 Toshiba Corp Preparation of laminated semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007120601A (en) * 2005-10-27 2007-05-17 Honda Motor Co Ltd Centrifugal clutch

Also Published As

Publication number Publication date
JPH0795525B2 (en) 1995-10-11

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term