JPS6455858A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6455858A JPS6455858A JP21360787A JP21360787A JPS6455858A JP S6455858 A JPS6455858 A JP S6455858A JP 21360787 A JP21360787 A JP 21360787A JP 21360787 A JP21360787 A JP 21360787A JP S6455858 A JPS6455858 A JP S6455858A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon film
- single crystal
- crystal silicon
- element area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To improve the dielectric strength by patterning an antioxidant/ antireflection film simultaneously with a single crystal silicon film to form an island-like element area, and generating a thick SiO2 film inside the element area by oxidizing the antioxidant/antireflection film as a mask. CONSTITUTION:On an SiO2 film 2 which is generated on a silicon substrate 1, a polycrystal silicon film 3 is adhered by the CVD method. An Si3N4 film is adhered thereupon having the SiO2 film therebetween. Then the polycrystal silicon film 3 is heated and melted by scanning a continuous argon laser beam from the top thereof to modify the polycrystal silicon film into a single crystal silicon film 3. Then a capped layer 20 and the single crystal silicon film 3 are patterned, while leaving the capped layer 20 as it is, by the photoprocess so that an island-like element area can be separated. Then an SiO2 film 9 is formed at the side surface of the single crystal silicon film 3 (island-like element area) by wet-oxidizing at 900 deg.C. According to the constitution, it is made possible to form a thick SiO2 film on the side surface of the single crystal silicon film, whereby the reduction of the gate dielectric strength can be prevented.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21360787A JPS6455858A (en) | 1987-08-26 | 1987-08-26 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21360787A JPS6455858A (en) | 1987-08-26 | 1987-08-26 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6455858A true JPS6455858A (en) | 1989-03-02 |
Family
ID=16641981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21360787A Pending JPS6455858A (en) | 1987-08-26 | 1987-08-26 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6455858A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5100174A (en) * | 1990-12-18 | 1992-03-31 | Trw, Inc. | Auto ignition package for an air bag inflator |
| JPH07193245A (en) * | 1993-12-27 | 1995-07-28 | Nec Corp | Manufacture of thin-film transistor |
| JP2006295097A (en) * | 2004-06-04 | 2006-10-26 | Advanced Lcd Technologies Development Center Co Ltd | Crystallizing method, thin-film transistor manufacturing method, crystallized substrate, thin-film transistor, and display device |
| US7943936B2 (en) | 2004-06-04 | 2011-05-17 | Advanced Lcd Technologies Development Center Co., Ltd. | Crystallizing method, thin-film transistor manufacturing method, thin-film transistor, and display device |
-
1987
- 1987-08-26 JP JP21360787A patent/JPS6455858A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5100174A (en) * | 1990-12-18 | 1992-03-31 | Trw, Inc. | Auto ignition package for an air bag inflator |
| JPH07193245A (en) * | 1993-12-27 | 1995-07-28 | Nec Corp | Manufacture of thin-film transistor |
| JP2006295097A (en) * | 2004-06-04 | 2006-10-26 | Advanced Lcd Technologies Development Center Co Ltd | Crystallizing method, thin-film transistor manufacturing method, crystallized substrate, thin-film transistor, and display device |
| US7943936B2 (en) | 2004-06-04 | 2011-05-17 | Advanced Lcd Technologies Development Center Co., Ltd. | Crystallizing method, thin-film transistor manufacturing method, thin-film transistor, and display device |
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