JPS64721A - Manufacture of single crystal thin-film - Google Patents

Manufacture of single crystal thin-film

Info

Publication number
JPS64721A
JPS64721A JP15446287A JP15446287A JPS64721A JP S64721 A JPS64721 A JP S64721A JP 15446287 A JP15446287 A JP 15446287A JP 15446287 A JP15446287 A JP 15446287A JP S64721 A JPS64721 A JP S64721A
Authority
JP
Japan
Prior art keywords
film
single crystal
substrate
sio
species
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15446287A
Other languages
Japanese (ja)
Other versions
JPH0795526B2 (en
JPH01721A (en
Inventor
Toshiaki Miyajima
Masayoshi Koba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP62154462A priority Critical patent/JPH0795526B2/en
Publication of JPH01721A publication Critical patent/JPH01721A/en
Publication of JPS64721A publication Critical patent/JPS64721A/en
Publication of JPH0795526B2 publication Critical patent/JPH0795526B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE: To leave a region, a crystal orientation of which coincides with a substrate, and to form single crystal thin films, crystal orientations of which agree with the single crystal substrate, stably even in two layers or more, using the region section as species by composing a melting region in the single crystal thin-films as species so as to be made smaller than the pattern of the thin-films.
CONSTITUTION: An SiO2 film 2 is formed onto a single crystal silicon substrate 1 in 2μm, and an exposed section in the substrate 1 is patterned, thus shaping an opening section 1a 2μm square. A polycrystalline silicon film 3 in 0.5μm and an SiO2 film in 0.26μm are formed, sections from the exposed section 1a are scanned with beams 5 in melting width of 60μm, the silicon film 3 is changed into a single crystal, and a single crystal silicon film 6, a crystal orientation of which coincides with the substrate 1, is acquired. The film 4 is etched, the film 6 is patterned, and a single crystal silicon film 7 50μm square as species is acquired. An SiO2 film 8, an opening section 7a, a polycrystalline silicon film 9 and an SiO2 film 10 are shaped in the same manner as mentioned above, sections from an exposed section in the film 7 are scanned, the film 9 is turned into a single crystal, employing the film 7 as species, and a single crystal silicon film 13, a crystal orientation of which agrees with the substrate 1, is obtained.
COPYRIGHT: (C)1989,JPO&Japio
JP62154462A 1987-06-23 1987-06-23 Method for manufacturing single crystal thin film Expired - Lifetime JPH0795526B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62154462A JPH0795526B2 (en) 1987-06-23 1987-06-23 Method for manufacturing single crystal thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62154462A JPH0795526B2 (en) 1987-06-23 1987-06-23 Method for manufacturing single crystal thin film

Publications (3)

Publication Number Publication Date
JPH01721A JPH01721A (en) 1989-01-05
JPS64721A true JPS64721A (en) 1989-01-05
JPH0795526B2 JPH0795526B2 (en) 1995-10-11

Family

ID=15584770

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62154462A Expired - Lifetime JPH0795526B2 (en) 1987-06-23 1987-06-23 Method for manufacturing single crystal thin film

Country Status (1)

Country Link
JP (1) JPH0795526B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009081433A (en) * 2007-09-26 2009-04-16 Sharp Corp Crystallization method and active semiconductor film structure

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5853821A (en) * 1981-09-25 1983-03-30 Toshiba Corp Preparation of laminated semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5853821A (en) * 1981-09-25 1983-03-30 Toshiba Corp Preparation of laminated semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009081433A (en) * 2007-09-26 2009-04-16 Sharp Corp Crystallization method and active semiconductor film structure

Also Published As

Publication number Publication date
JPH0795526B2 (en) 1995-10-11

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term