JPS5687387A - Manufacture of josephson element - Google Patents
Manufacture of josephson elementInfo
- Publication number
- JPS5687387A JPS5687387A JP16444879A JP16444879A JPS5687387A JP S5687387 A JPS5687387 A JP S5687387A JP 16444879 A JP16444879 A JP 16444879A JP 16444879 A JP16444879 A JP 16444879A JP S5687387 A JPS5687387 A JP S5687387A
- Authority
- JP
- Japan
- Prior art keywords
- film
- evaporation
- section
- thickness
- lift
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0912—Manufacture or treatment of Josephson-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
PURPOSE:To permit the control of the thickness of a junction section with good accuracy by thickening only conductive films after thinly forming and controlling the thickness of two superconductive films comstituting electrode sections and that of the junction section between the films by a vertical evaporation method. CONSTITUTION:A film 5 for lift off is formed on a substrate 4 and a resist film 6 is applied on the film 5 to form an opening section 61 after painting a desired Josephson element pattern. And a superconductor such as Nb or the like is evaporated on the opposite part of the opening section 51 at the bottom of a concave section 41 in a nearly vertical direction to the main surface of the substrate 4 and the first evaporation 7 is formed so that a part 71 becoming a junction section 3 may become desired thickness. Next, a superconductor having the same quality (heterogeneity) as the first evaporation film 7 is evaporated in a slant direction to the main surface of the substrate 4 to form an evaporation film 7a of about 1,000Angstrom in thickness uniting with the first evaporation film 7 except the section 71. Finally, the removal of etching is applied to the film 5 for lift off and the characteristics with stability will be obtained by lifting off the film 5 for lift off and the second evaporation film 7a on the film 5.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16444879A JPS5687387A (en) | 1979-12-17 | 1979-12-17 | Manufacture of josephson element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16444879A JPS5687387A (en) | 1979-12-17 | 1979-12-17 | Manufacture of josephson element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5687387A true JPS5687387A (en) | 1981-07-15 |
JPS6156876B2 JPS6156876B2 (en) | 1986-12-04 |
Family
ID=15793353
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16444879A Granted JPS5687387A (en) | 1979-12-17 | 1979-12-17 | Manufacture of josephson element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5687387A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5313074A (en) * | 1990-05-31 | 1994-05-17 | Osaka Gas Company Limited | Josephson device formed over a recess step with protective layer |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55146987A (en) * | 1979-05-07 | 1980-11-15 | Fujitsu Ltd | Manufacture of tunnel junction type josephson element |
-
1979
- 1979-12-17 JP JP16444879A patent/JPS5687387A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55146987A (en) * | 1979-05-07 | 1980-11-15 | Fujitsu Ltd | Manufacture of tunnel junction type josephson element |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5313074A (en) * | 1990-05-31 | 1994-05-17 | Osaka Gas Company Limited | Josephson device formed over a recess step with protective layer |
US5401530A (en) * | 1990-05-31 | 1995-03-28 | Osaka Gas Company, Ltd. | Process for fabricating a Josephson device |
Also Published As
Publication number | Publication date |
---|---|
JPS6156876B2 (en) | 1986-12-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA2034481A1 (en) | Self-aligned gate process for fabricating field emitter arrays | |
JPS6441282A (en) | Method of depositing superconducting oxide material thin layer | |
JPS5687387A (en) | Manufacture of josephson element | |
JPS6421905A (en) | Manufacture of small-sized superconducting solenoid | |
JPS5742151A (en) | Formation of pattern | |
US4264916A (en) | Semiconductor barrier Josephson junction | |
JPS5688384A (en) | Manufacture of josephson junction element | |
JPS5683087A (en) | Manufacture of josephson element | |
JPS5772333A (en) | Manufacture of semiconductor device | |
JPS57143826A (en) | Formation of resist pattern on gapped semiconductor substrate | |
JPS5568655A (en) | Manufacturing method of wiring | |
EP0332218A3 (en) | Process of forming superconducting film | |
JPS57126185A (en) | Manufacture of josephson element | |
JPS5667979A (en) | Preparation method of josephson element | |
JPS56114388A (en) | Manufacture of josephson element | |
JPS5661175A (en) | Thin-film solar cell | |
JPS6430228A (en) | Manufacture of semiconductor device | |
JPS5497546A (en) | Etching method of permalloy thin layer | |
JPS64721A (en) | Manufacture of single crystal thin-film | |
JPS6411380A (en) | Manufacture of josephson element | |
JPS5613733A (en) | Forming method for electrode | |
JPS642372A (en) | Manufacture of mes fet | |
JPS6464380A (en) | Superconducting transistor | |
DE4302769C2 (en) | Process for the production of Josephson and tunnel contacts from high-temperature superconductors | |
JPS5495186A (en) | Production of compound semiconductor device |