AR003731A1 - Un proceso para la preparacion de una pelicula semiconductora delgada - Google Patents
Un proceso para la preparacion de una pelicula semiconductora delgadaInfo
- Publication number
- AR003731A1 AR003731A1 ARP960104520A ARP960104520A AR003731A1 AR 003731 A1 AR003731 A1 AR 003731A1 AR P960104520 A ARP960104520 A AR P960104520A AR P960104520 A ARP960104520 A AR P960104520A AR 003731 A1 AR003731 A1 AR 003731A1
- Authority
- AR
- Argentina
- Prior art keywords
- preparation
- nanoparticles
- semiconductive film
- thin semiconductive
- fuse
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B17/00—Sulfur; Compounds thereof
- C01B17/20—Methods for preparing sulfides or polysulfides, in general
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/007—Tellurides or selenides of metals
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B5/00—Single-crystal growth from gels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02562—Tellurides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02601—Nanoparticles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/01—Crystal-structural characteristics depicted by a TEM-image
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/02—Amorphous compounds
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/22—Rheological behaviour as dispersion, e.g. viscosity, sedimentation stability
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/28—Other inorganic materials
- C03C2217/287—Chalcogenides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/11—Deposition methods from solutions or suspensions
- C03C2218/113—Deposition methods from solutions or suspensions by sol-gel processes
Abstract
Un proceso para la preparación de una película semiconductora. El proceso consiste en depositar nanopartículas de un material semiconductor sobre unsustrato cuya temperatura de superficie durante la sedimentación de las nanopartículas essu ficiente para causar la fusión sustancialmente simultáneade las nanopartículas, fundirlas entre sí y lograr el crecimiento de la película.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/536,348 US5711803A (en) | 1995-09-29 | 1995-09-29 | Preparation of a semiconductor thin film |
Publications (1)
Publication Number | Publication Date |
---|---|
AR003731A1 true AR003731A1 (es) | 1998-09-09 |
Family
ID=24138149
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ARP960104520A AR003731A1 (es) | 1995-09-29 | 1996-09-26 | Un proceso para la preparacion de una pelicula semiconductora delgada |
Country Status (6)
Country | Link |
---|---|
US (1) | US5711803A (es) |
AR (1) | AR003731A1 (es) |
AU (1) | AU7369896A (es) |
IN (1) | IN189239B (es) |
WO (1) | WO1997012082A1 (es) |
ZA (1) | ZA968080B (es) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6126740A (en) * | 1995-09-29 | 2000-10-03 | Midwest Research Institute | Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films |
US6607829B1 (en) | 1997-11-13 | 2003-08-19 | Massachusetts Institute Of Technology | Tellurium-containing nanocrystalline materials |
US6207392B1 (en) | 1997-11-25 | 2001-03-27 | The Regents Of The University Of California | Semiconductor nanocrystal probes for biological applications and process for making and using such probes |
US5986206A (en) * | 1997-12-10 | 1999-11-16 | Nanogram Corporation | Solar cell |
US6294401B1 (en) | 1998-08-19 | 2001-09-25 | Massachusetts Institute Of Technology | Nanoparticle-based electrical, chemical, and mechanical structures and methods of making same |
US6139626A (en) * | 1998-09-04 | 2000-10-31 | Nec Research Institute, Inc. | Three-dimensionally patterned materials and methods for manufacturing same using nanocrystals |
JP5165824B2 (ja) * | 1999-07-26 | 2013-03-21 | マサチューセッツ インスティテュート オブ テクノロジー | テルル含有結晶性材料 |
AU777998B2 (en) * | 1999-10-05 | 2004-11-11 | Commonwealth Scientific And Industrial Research Organisation | Three dimensional array films |
AUPQ326499A0 (en) * | 1999-10-05 | 1999-10-28 | Commonwealth Scientific And Industrial Research Organisation | Nanoparticle films |
US20010029752A1 (en) * | 1999-12-03 | 2001-10-18 | Natan Michael J. | Thermal immobilization of colloidal metal nanoparticles |
GB0026382D0 (en) * | 2000-10-27 | 2000-12-13 | Nanox Ltd | Production of metal chalcogenide nanoparticles |
US20020110180A1 (en) * | 2001-02-09 | 2002-08-15 | Barney Alfred A. | Temperature-sensing composition |
US20030066998A1 (en) * | 2001-08-02 | 2003-04-10 | Lee Howard Wing Hoon | Quantum dots of Group IV semiconductor materials |
US6794265B2 (en) * | 2001-08-02 | 2004-09-21 | Ultradots, Inc. | Methods of forming quantum dots of Group IV semiconductor materials |
US6819845B2 (en) * | 2001-08-02 | 2004-11-16 | Ultradots, Inc. | Optical devices with engineered nonlinear nanocomposite materials |
US6710366B1 (en) | 2001-08-02 | 2004-03-23 | Ultradots, Inc. | Nanocomposite materials with engineered properties |
US7005669B1 (en) | 2001-08-02 | 2006-02-28 | Ultradots, Inc. | Quantum dots, nanocomposite materials with quantum dots, devices with quantum dots, and related fabrication methods |
WO2003025539A2 (en) * | 2001-09-17 | 2003-03-27 | Massachusetts Institute Of Technology | Semiconductor nanocrystal composite |
US7723311B2 (en) * | 2003-06-18 | 2010-05-25 | Nanobiomagnetics, Inc. | Delivery of bioactive substances to target cells |
US7344491B1 (en) | 2003-11-26 | 2008-03-18 | Nanobiomagnetics, Inc. | Method and apparatus for improving hearing |
US8651113B2 (en) * | 2003-06-18 | 2014-02-18 | Swr&D Inc. | Magnetically responsive nanoparticle therapeutic constructs and methods of making and using |
US7879696B2 (en) * | 2003-07-08 | 2011-02-01 | Kovio, Inc. | Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom |
US7229497B2 (en) * | 2003-08-26 | 2007-06-12 | Massachusetts Institute Of Technology | Method of preparing nanocrystals |
US7663057B2 (en) * | 2004-02-19 | 2010-02-16 | Nanosolar, Inc. | Solution-based fabrication of photovoltaic cell |
US7229690B2 (en) | 2004-07-26 | 2007-06-12 | Massachusetts Institute Of Technology | Microspheres including nanoparticles |
US7316967B2 (en) * | 2004-09-24 | 2008-01-08 | Massachusetts Institute Of Technology | Flow method and reactor for manufacturing noncrystals |
DE102004060737B4 (de) * | 2004-12-15 | 2007-03-08 | Degussa Ag | Verfahren zur Herstellung von halbleitenden oder photovoltaisch aktiven Filmen |
US8134175B2 (en) | 2005-01-11 | 2012-03-13 | Massachusetts Institute Of Technology | Nanocrystals including III-V semiconductors |
US20080003364A1 (en) | 2006-06-28 | 2008-01-03 | Ginley David S | Metal Inks |
US8759144B2 (en) * | 2007-11-02 | 2014-06-24 | Alliance For Sustainable Energy, Llc | Fabrication of contacts for silicon solar cells including printing burn through layers |
US20120132272A1 (en) | 2010-11-19 | 2012-05-31 | Alliance For Sustainable Energy, Llc. | Solution processed metal oxide thin film hole transport layers for high performance organic solar cells |
CN102249549B (zh) * | 2011-04-01 | 2013-05-22 | 中南大学 | 一种太阳能电池用铜铟硒光伏薄膜、粉体、涂料及制备方法 |
EP2965366A4 (en) | 2013-03-07 | 2016-12-07 | Alliance Sustainable Energy | METHODS FOR PRODUCTION OF LOAD SELECTION TRANSPORT LAYERS AND THIN FILM |
US10514228B2 (en) | 2017-01-05 | 2019-12-24 | Daniel A. Summers | Bow accessory mounting system and method |
USD962377S1 (en) | 2018-11-13 | 2022-08-30 | Qtm, Llc | Arrow support for archery arrow rest devices |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4133621A1 (de) * | 1991-10-10 | 1993-04-22 | Inst Neue Mat Gemein Gmbh | Nanoskalige teilchen enthaltende kompositmaterialien, verfahren zu deren herstellung und deren verwendung fuer optische elemente |
US5262357A (en) * | 1991-11-22 | 1993-11-16 | The Regents Of The University Of California | Low temperature thin films formed from nanocrystal precursors |
US5363798A (en) * | 1993-09-29 | 1994-11-15 | The United States Of America As Represented By The Secretary Of The Navy | Large area semiconductor wafers |
US5559057A (en) * | 1994-03-24 | 1996-09-24 | Starfire Electgronic Development & Marketing Ltd. | Method for depositing and patterning thin films formed by fusing nanocrystalline precursors |
US5576248A (en) * | 1994-03-24 | 1996-11-19 | Starfire Electronic Development & Marketing, Ltd. | Group IV semiconductor thin films formed at low temperature using nanocrystal precursors |
US5491114A (en) * | 1994-03-24 | 1996-02-13 | Starfire Electronic Development & Marketing, Ltd. | Method of making large-area semiconductor thin films formed at low temperature using nanocrystal presursors |
US5537000A (en) * | 1994-04-29 | 1996-07-16 | The Regents, University Of California | Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices |
-
1995
- 1995-09-29 US US08/536,348 patent/US5711803A/en not_active Expired - Lifetime
-
1996
- 1996-09-24 AU AU73698/96A patent/AU7369896A/en not_active Abandoned
- 1996-09-24 IN IN1694CA1996 patent/IN189239B/en unknown
- 1996-09-24 WO PCT/US1996/015267 patent/WO1997012082A1/en active Application Filing
- 1996-09-26 ZA ZA968080A patent/ZA968080B/xx unknown
- 1996-09-26 AR ARP960104520A patent/AR003731A1/es unknown
Also Published As
Publication number | Publication date |
---|---|
WO1997012082A1 (en) | 1997-04-03 |
ZA968080B (en) | 1997-04-21 |
AU7369896A (en) | 1997-04-17 |
IN189239B (es) | 2003-01-11 |
US5711803A (en) | 1998-01-27 |
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