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Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed
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Abstract
A doping method for semiconductor with Si-B layer as expanding source includes the following steps: 1. preparing one material with Si-B; 2. preparing one substrate; 3. depositing the material with Si-B on the substrate to form one Si-B layer on the substrate as the expanding source of B.
TW83106700A1994-07-211994-07-21Doping method for semiconductor
TW237554B
(en)