FR2387080A1 - Procede de production de monocristal de silicium avec un element de chauffage a arc - Google Patents

Procede de production de monocristal de silicium avec un element de chauffage a arc

Info

Publication number
FR2387080A1
FR2387080A1 FR7810635A FR7810635A FR2387080A1 FR 2387080 A1 FR2387080 A1 FR 2387080A1 FR 7810635 A FR7810635 A FR 7810635A FR 7810635 A FR7810635 A FR 7810635A FR 2387080 A1 FR2387080 A1 FR 2387080A1
Authority
FR
France
Prior art keywords
silicon
single crystal
heating element
arc heating
monocristal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7810635A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of FR2387080A1 publication Critical patent/FR2387080A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/033—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by reduction of silicon halides or halosilanes with a metal or a metallic alloy as the only reducing agents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/06—Non-vertical pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B7/00—Heating by electric discharge
    • H05B7/18—Heating by arc discharge
    • H05B7/185—Heating gases for arc discharge
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique
    • Y10S117/904—Laser beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/905—Electron beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91—Downward pulling

Abstract

L'invention concerne un procédé de production de monocristal de silicium. Dans un élément de chauffage à arc, on introduit un halogénure de silicium purifié et de l'hydrogène ou un métal réducteur comme du sodium. Les produits de réaction comprennent un sel gazeux du réducteur et du silicium liquide qui se dépose sur une surface inclinée, on fixe un germe de monocristal de silicium au silicium liquide et l'on tire ce germe pour former un grand monocristal. Application à la préparation en grande quantité de monocristal de silicium.
FR7810635A 1977-04-14 1978-04-11 Procede de production de monocristal de silicium avec un element de chauffage a arc Withdrawn FR2387080A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/787,635 US4102767A (en) 1977-04-14 1977-04-14 Arc heater method for the production of single crystal silicon

Publications (1)

Publication Number Publication Date
FR2387080A1 true FR2387080A1 (fr) 1978-11-10

Family

ID=25142102

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7810635A Withdrawn FR2387080A1 (fr) 1977-04-14 1978-04-11 Procede de production de monocristal de silicium avec un element de chauffage a arc

Country Status (6)

Country Link
US (1) US4102767A (fr)
JP (1) JPS53129179A (fr)
CA (1) CA1102886A (fr)
DE (1) DE2814751A1 (fr)
FR (1) FR2387080A1 (fr)
GB (1) GB1601073A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2455480A1 (fr) * 1979-05-03 1980-11-28 Anvar Moyens pour la fabrication de silicium monocristallin sous la forme d'un ruban

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2407892A1 (fr) * 1977-11-04 1979-06-01 Rhone Poulenc Ind Procede de fabrication de silicium pour la conversion photovoltaique
US4265859A (en) * 1978-05-31 1981-05-05 Energy Materials Corporation Apparatus for producing semiconductor grade silicon and replenishing the melt of a crystal growth system
US4239740A (en) * 1979-05-25 1980-12-16 Westinghouse Electric Corp. Production of high purity silicon by a heterogeneous arc heater reduction
DE3016807A1 (de) * 1980-05-02 1981-11-05 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur herstellung von silizium
CA1198581A (fr) * 1980-10-20 1985-12-31 Robert K. Gould Methode et dispositif de production de silicone extra- pur et partir des flammes de sodium et de tetrachlorure de silicium
US4487162A (en) * 1980-11-25 1984-12-11 Cann Gordon L Magnetoplasmadynamic apparatus for the separation and deposition of materials
US4471003A (en) * 1980-11-25 1984-09-11 Cann Gordon L Magnetoplasmadynamic apparatus and process for the separation and deposition of materials
US4374163A (en) * 1981-09-29 1983-02-15 Westinghouse Electric Corp. Method of vapor deposition
US4529576A (en) * 1982-12-27 1985-07-16 Sri International Process and apparatus for obtaining silicon from fluosilicic acid
US4584181A (en) * 1982-12-27 1986-04-22 Sri International Process and apparatus for obtaining silicon from fluosilicic acid
US4590043A (en) * 1982-12-27 1986-05-20 Sri International Apparatus for obtaining silicon from fluosilicic acid
US5800611A (en) * 1997-09-08 1998-09-01 Christensen; Howard Method for making large area single crystal silicon sheets
JP4772670B2 (ja) * 2004-06-22 2011-09-14 株式会社トクヤマ カーボン製筒状容器およびシリコン製造方法
US7780938B2 (en) * 2006-04-13 2010-08-24 Cabot Corporation Production of silicon through a closed-loop process
BRPI0814309A2 (pt) * 2007-08-01 2015-02-03 Boston Silicon Materials Llc Processo para a produção de silíco elementar de pureza elevada
DE102008059408A1 (de) * 2008-11-27 2010-06-02 Schmid Silicon Technology Gmbh Verfahren und Vorrichtungen zur Herstellung von Reinstsilizium
CN101439859B (zh) * 2008-12-02 2011-08-03 浙江大学 一种绿色荧光纳米硅晶体
WO2010107850A1 (fr) * 2009-03-20 2010-09-23 Boston Silicon Materials Llc Procédé de fabrication de silicium métallique de qualité photovoltaïque
DE102010021004A1 (de) * 2010-05-14 2011-11-17 Schmid Silicon Technology Gmbh Herstellung von monokristallinen Halbleiterwerkstoffen
DE102010015354A1 (de) * 2010-04-13 2011-10-13 Schmid Silicon Technology Gmbh Herstellung eines kristallinen Halbleiterwerkstoffs
WO2011128292A1 (fr) * 2010-04-13 2011-10-20 Schmid Silicon Technology Gmbh Fabrication de matériaux semi-conducteurs monocristallins
CN201864770U (zh) * 2010-11-22 2011-06-15 江苏淘镜有限公司 电子枪蒸发用坩埚

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH355220A (de) * 1954-06-13 1961-06-30 Siemens Ag Verfahren zur Herstellung eines kristallisierten Halbleiterstoffes
FR2262554A1 (fr) * 1974-03-01 1975-09-26 Labo Electronique Physique
FR2376821A1 (fr) * 1977-01-06 1978-08-04 Westinghouse Electric Corp Procede de fabrication de silicium tres pur

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA651374A (en) * 1962-10-30 Schering Hans Recovery of unused materials in the production of silicon
US524173A (en) * 1894-08-07 Variable-resistance medium for telephones
US732410A (en) * 1902-10-13 1903-06-30 Christian Harrebow Homan Manufacture of silicon and aluminium from silicates of alumina.
DE1041483B (de) * 1953-07-28 1958-10-23 Siemens Ag Verfahren zur Herstellung reinsten Siliciums
DE1054436B (de) * 1956-02-11 1959-04-09 Pechiney Prod Chimiques Sa Verfahren zur Herstellung von kompaktem Silicium hohen Reinheitsgrades
US2904404A (en) * 1957-01-09 1959-09-15 Raytheon Co Preparation of silicon
US2955966A (en) * 1957-07-03 1960-10-11 Int Standard Electric Corp Manufacture of semiconductor material
DE1129145B (de) * 1960-07-07 1962-05-10 Knapsack Ag Verfahren zur Herstellung von hochreinem Silicium
US3325314A (en) * 1961-10-27 1967-06-13 Siemens Ag Semi-conductor product and method for making same
DE1290712B (de) * 1966-01-15 1969-03-13 Hoechst Ag Gegen den Abbau durch Licht und Waerme stabilisierte Formmassen
CH525705A (de) * 1968-12-24 1972-07-31 Lonza Ag Verwendung von vortex-stabilisierten Plasmabrennern zur Durchführung von chemischen Reaktionen
US3963838A (en) * 1974-05-24 1976-06-15 Texas Instruments Incorporated Method of operating a quartz fluidized bed reactor for the production of silicon

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH355220A (de) * 1954-06-13 1961-06-30 Siemens Ag Verfahren zur Herstellung eines kristallisierten Halbleiterstoffes
FR2262554A1 (fr) * 1974-03-01 1975-09-26 Labo Electronique Physique
FR2376821A1 (fr) * 1977-01-06 1978-08-04 Westinghouse Electric Corp Procede de fabrication de silicium tres pur

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/79 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2455480A1 (fr) * 1979-05-03 1980-11-28 Anvar Moyens pour la fabrication de silicium monocristallin sous la forme d'un ruban
US4309239A (en) * 1979-05-03 1982-01-05 Agence Nationale De Valorisation De La Recherche Method and means for manufacturing mono-crystalline silicon in tape form

Also Published As

Publication number Publication date
US4102767A (en) 1978-07-25
JPS53129179A (en) 1978-11-10
CA1102886A (fr) 1981-06-09
DE2814751A1 (de) 1978-10-19
GB1601073A (en) 1981-10-21

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Legal Events

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ST Notification of lapse
AR Application made for restoration
BR Restoration of rights
ST Notification of lapse