FR2376072A1 - Production de silicium de haute purete par reduction des intermediaires du silicium dans un element de chauffage a arc - Google Patents
Production de silicium de haute purete par reduction des intermediaires du silicium dans un element de chauffage a arcInfo
- Publication number
- FR2376072A1 FR2376072A1 FR7739499A FR7739499A FR2376072A1 FR 2376072 A1 FR2376072 A1 FR 2376072A1 FR 7739499 A FR7739499 A FR 7739499A FR 7739499 A FR7739499 A FR 7739499A FR 2376072 A1 FR2376072 A1 FR 2376072A1
- Authority
- FR
- France
- Prior art keywords
- silicon
- heating element
- arc heating
- intermediaries
- reduction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J10/00—Chemical processes in general for reacting liquid with gaseous media other than in the presence of solid particles, or apparatus specially adapted therefor
- B01J10/005—Chemical processes in general for reacting liquid with gaseous media other than in the presence of solid particles, or apparatus specially adapted therefor carried out at high temperatures in the presence of a molten material
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B7/00—Heating by electric discharge
- H05B7/18—Heating by arc discharge
- H05B7/20—Direct heating by arc discharge, i.e. where at least one end of the arc directly acts on the material to be heated, including additional resistance heating by arc current flowing through the material to be heated
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Silicon Compounds (AREA)
Abstract
L'invention concerne la production de silicium de haute pureté par réduction, dans un élément de chauffage à arc, de composés intermédiaires du silicium. Selon l'invention, on réduit un matériau comprenant du silicium à l'aide d'un réducteur comme le carbone. On fait réagir le silicium de qualité métallurgique ainsi obtenu avec un halogénure d'hydrogène pour obtenir des composés des impuretés et des composés intermédiaires du silicium et l'on sépare ces derniers des impuretés. On établit un arc entre les électrodes d'un élément de chauffage à arc et l'on fait réagir dans cet arc de l'hydrogène et le composé du silicium pour obtenir du silicium liquide. Application aux cellules solaires au silicium.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/755,383 US4102764A (en) | 1976-12-29 | 1976-12-29 | High purity silicon production by arc heater reduction of silicon intermediates |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2376072A1 true FR2376072A1 (fr) | 1978-07-28 |
Family
ID=25038895
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7739499A Withdrawn FR2376072A1 (fr) | 1976-12-29 | 1977-12-28 | Production de silicium de haute purete par reduction des intermediaires du silicium dans un element de chauffage a arc |
Country Status (5)
Country | Link |
---|---|
US (1) | US4102764A (fr) |
JP (1) | JPS5384814A (fr) |
CA (1) | CA1087377A (fr) |
DE (1) | DE2756467A1 (fr) |
FR (1) | FR2376072A1 (fr) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4102985A (en) * | 1977-01-06 | 1978-07-25 | Westinghouse Electric Corp. | Arc heater production of silicon involving a hydrogen reduction |
US4188368A (en) * | 1978-03-29 | 1980-02-12 | Nasa | Method of producing silicon |
US4265859A (en) * | 1978-05-31 | 1981-05-05 | Energy Materials Corporation | Apparatus for producing semiconductor grade silicon and replenishing the melt of a crystal growth system |
IT1100218B (it) * | 1978-11-09 | 1985-09-28 | Montedison Spa | Procedimento per la purificazione di silicio |
US4239740A (en) * | 1979-05-25 | 1980-12-16 | Westinghouse Electric Corp. | Production of high purity silicon by a heterogeneous arc heater reduction |
DE3016807A1 (de) * | 1980-05-02 | 1981-11-05 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zur herstellung von silizium |
US4292342A (en) * | 1980-05-09 | 1981-09-29 | Motorola, Inc. | High pressure plasma deposition of silicon |
US4457902A (en) * | 1980-10-24 | 1984-07-03 | Watson Keith R | High efficiency hydrocarbon reduction of silica |
US4487162A (en) * | 1980-11-25 | 1984-12-11 | Cann Gordon L | Magnetoplasmadynamic apparatus for the separation and deposition of materials |
US4471003A (en) * | 1980-11-25 | 1984-09-11 | Cann Gordon L | Magnetoplasmadynamic apparatus and process for the separation and deposition of materials |
US4529576A (en) * | 1982-12-27 | 1985-07-16 | Sri International | Process and apparatus for obtaining silicon from fluosilicic acid |
US4584181A (en) * | 1982-12-27 | 1986-04-22 | Sri International | Process and apparatus for obtaining silicon from fluosilicic acid |
US4559219A (en) * | 1984-04-02 | 1985-12-17 | General Electric Company | Reducing powder formation in the production of high-purity silicon |
US5165965A (en) * | 1990-12-28 | 1992-11-24 | Reynolds Metals Company | Method for providing predistored images on shrinkable film |
NO20033207D0 (no) * | 2002-07-31 | 2003-07-15 | Per Kristian Egeberg | Fremgangsmåte og reaktor for fremstilling av höyrent silisium, samt anvendelse av fremgangsmåten og reaktoren ved fremstilling av höyrentsilisium fra uraffinert silisium |
DE102004010055A1 (de) * | 2004-03-02 | 2005-09-22 | Degussa Ag | Verfahren zur Herstellung von Silicium |
DE102005024041A1 (de) | 2005-05-25 | 2006-11-30 | City Solar Ag | Verfahren zur Herstellung von Silicium aus Halogensilanen |
US20080023070A1 (en) * | 2006-07-28 | 2008-01-31 | Sanjai Sinha | Methods and systems for manufacturing polycrystalline silicon and silicon-germanium solar cells |
DE102006043929B4 (de) * | 2006-09-14 | 2016-10-06 | Spawnt Private S.À.R.L. | Verfahren zur Herstellung von festen Polysilanmischungen |
ITRM20060521A1 (it) * | 2006-10-02 | 2008-04-03 | Solaria Tecnologie S R L | Procedimento ed apparecchiatura per la produzione di silicio ad alta purezza impiegando precursori multipli |
US7972584B2 (en) * | 2008-08-25 | 2011-07-05 | Orion Laboratories, Llc | Magnesiothermic methods of producing high-purity silicon |
WO2010025163A1 (fr) * | 2008-08-27 | 2010-03-04 | Bp Corporation North America Inc. | Appareil et procédé de fusion électrique directe d'une matière première |
DE102008059408A1 (de) | 2008-11-27 | 2010-06-02 | Schmid Silicon Technology Gmbh | Verfahren und Vorrichtungen zur Herstellung von Reinstsilizium |
DK178751B1 (en) * | 2013-04-11 | 2017-01-02 | Danica Invest Aps | A process for the production of high-purity silicon and an installation therefor |
DE102013207444A1 (de) * | 2013-04-24 | 2014-10-30 | Evonik Degussa Gmbh | Verfahren und Vorrichtung zur Herstellung von Polychlorsilanen |
US9938153B2 (en) * | 2016-04-06 | 2018-04-10 | Indian Institute Of Technology Bombay | Method of preparing silicon from sand |
CN109626378B (zh) * | 2019-02-28 | 2024-02-20 | 厦门佰事兴新材料科技有限公司 | 一种多晶硅还原炉电极 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR332583A (fr) * | 1902-03-12 | 1903-10-31 | Christian Harrebow Homan | Procédé de fabrication du silicium au moyen des silicates |
FR1131422A (fr) * | 1954-06-13 | 1957-02-21 | Siemens Ag | Procédé pour la préparation de matériaux cristallisés particulièrement purs, dispositif pour sa mise en oeuvre et produits obtenus |
DE1041483B (de) * | 1953-07-28 | 1958-10-23 | Siemens Ag | Verfahren zur Herstellung reinsten Siliciums |
FR1207765A (fr) * | 1958-07-10 | 1960-02-18 | Préparation de silicium pur par réduction | |
FR76571E (fr) * | 1959-10-19 | 1961-11-10 | Int Standard Electric Corp | Méthode de production du silicium à haute pureté |
FR2027085A1 (fr) * | 1968-12-24 | 1970-09-25 | Lonza Ag | |
FR2341389A1 (fr) * | 1976-02-17 | 1977-09-16 | Montedison Spa | Procede de production de poudres de produits ceramiques, metalliques ou similaires par arc au plasma |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA651374A (en) * | 1962-10-30 | Schering Hans | Recovery of unused materials in the production of silicon | |
US732410A (en) * | 1902-10-13 | 1903-06-30 | Christian Harrebow Homan | Manufacture of silicon and aluminium from silicates of alumina. |
BE554836A (fr) * | 1956-02-11 | |||
US2955024A (en) * | 1956-03-26 | 1960-10-04 | Owens Illinois Glass Co | Process for making purified silicon from silicon-containing substances |
US2904404A (en) * | 1957-01-09 | 1959-09-15 | Raytheon Co | Preparation of silicon |
US2955966A (en) * | 1957-07-03 | 1960-10-11 | Int Standard Electric Corp | Manufacture of semiconductor material |
DE1123301B (de) * | 1960-06-21 | 1962-02-08 | Siemens Ag | Verfahren zum Herstellen der halbleitenden Elemente Silicium und Germanium |
DE1129145B (de) * | 1960-07-07 | 1962-05-10 | Knapsack Ag | Verfahren zur Herstellung von hochreinem Silicium |
US3325314A (en) * | 1961-10-27 | 1967-06-13 | Siemens Ag | Semi-conductor product and method for making same |
DE1290712B (de) * | 1966-01-15 | 1969-03-13 | Hoechst Ag | Gegen den Abbau durch Licht und Waerme stabilisierte Formmassen |
US3704094A (en) * | 1969-11-19 | 1972-11-28 | Union Carbide Corp | Process for the production of elemental silicon |
US3963838A (en) * | 1974-05-24 | 1976-06-15 | Texas Instruments Incorporated | Method of operating a quartz fluidized bed reactor for the production of silicon |
-
1976
- 1976-12-29 US US05/755,383 patent/US4102764A/en not_active Expired - Lifetime
-
1977
- 1977-11-29 CA CA292,023A patent/CA1087377A/fr not_active Expired
- 1977-12-17 DE DE19772756467 patent/DE2756467A1/de active Granted
- 1977-12-27 JP JP15661377A patent/JPS5384814A/ja active Pending
- 1977-12-28 FR FR7739499A patent/FR2376072A1/fr not_active Withdrawn
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR332583A (fr) * | 1902-03-12 | 1903-10-31 | Christian Harrebow Homan | Procédé de fabrication du silicium au moyen des silicates |
DE1041483B (de) * | 1953-07-28 | 1958-10-23 | Siemens Ag | Verfahren zur Herstellung reinsten Siliciums |
FR1131422A (fr) * | 1954-06-13 | 1957-02-21 | Siemens Ag | Procédé pour la préparation de matériaux cristallisés particulièrement purs, dispositif pour sa mise en oeuvre et produits obtenus |
FR1207765A (fr) * | 1958-07-10 | 1960-02-18 | Préparation de silicium pur par réduction | |
FR76571E (fr) * | 1959-10-19 | 1961-11-10 | Int Standard Electric Corp | Méthode de production du silicium à haute pureté |
FR2027085A1 (fr) * | 1968-12-24 | 1970-09-25 | Lonza Ag | |
FR2027608A1 (fr) * | 1968-12-24 | 1970-10-02 | Lonza Ag | |
FR2341389A1 (fr) * | 1976-02-17 | 1977-09-16 | Montedison Spa | Procede de production de poudres de produits ceramiques, metalliques ou similaires par arc au plasma |
Non-Patent Citations (5)
Title |
---|
CA1963 * |
EXBK/61 * |
EXBK/68 * |
EXBK/69 * |
EXBK/71 * |
Also Published As
Publication number | Publication date |
---|---|
DE2756467A1 (de) | 1978-07-13 |
DE2756467C2 (fr) | 1987-06-11 |
JPS5384814A (en) | 1978-07-26 |
US4102764A (en) | 1978-07-25 |
CA1087377A (fr) | 1980-10-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2376072A1 (fr) | Production de silicium de haute purete par reduction des intermediaires du silicium dans un element de chauffage a arc | |
FR2453827A1 (fr) | Procede de fabrication de silicium de la qualite pour cellules solaires | |
FR2376821A1 (fr) | Procede de fabrication de silicium tres pur | |
FR2407169A1 (fr) | Procede de preparation d'une reserve d'hydrogene et applications de ce procede. | |
NO874105L (no) | Nikkel-basert legering, samt anvendelse av en slik. | |
FR2381112A1 (fr) | Procede pour produire de l'hypochlorite de sodium | |
BE901114A (fr) | Procede pour fabriquer du silicium a partir de quartz sous forme de materiaux brut dans un bas fourneau electrique. | |
EP0001942B1 (fr) | Procédé de fabrication de silicium pour la conversion photovoltaique | |
FR2428676A1 (fr) | Alliage d'aluminium a haute conductivite electrique et procede pour le travailler | |
AU8989582A (en) | Alloying of calcium and aluminium into lead | |
ES439721A1 (es) | Procedimiento para la obtencion de un material de adicion para soldadura. | |
KR840000321A (ko) | 가스시일드 아아크 용접용 저 퓨움 와이어(low-fume wire) | |
JPH0512316B2 (fr) | ||
GB1079306A (en) | Improvements in or relating to the manufacture of filiform single crystals | |
DE3564134D1 (en) | Steel alloys, particularly for tubes for bicycle frames | |
JPS5619867A (en) | Battery | |
JPS5665968A (en) | Manufacture of electrically conductive aluminum alloy with high heat resistance | |
JPS5523025A (en) | Production of polycrystal silicon | |
Nasyrov et al. | Working Properties of Tungsten Monocrystals Grown by Zonal Recrystallization at High Rates | |
JPS52147600A (en) | Production of titanium nitride | |
NO793516L (no) | Anvendelse av et mn-ni-finkornbygningsstaal. | |
SU525516A1 (ru) | Состав сварочной проволоки | |
Polyakova et al. | Recrystallization of a Palladium--Ruthenium Alloy | |
JPS52126609A (en) | Aluminium alloy for casting | |
SU526478A1 (ru) | Способ получени олов нно-свинцового припо |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse | ||
AR | Application made for restoration | ||
DI | Inadmissibility of an action of restoration |