DK178751B1 - A process for the production of high-purity silicon and an installation therefor - Google Patents

A process for the production of high-purity silicon and an installation therefor

Info

Publication number
DK178751B1
DK178751B1 DKPA201370207A DKPA201370207A DK178751B1 DK 178751 B1 DK178751 B1 DK 178751B1 DK PA201370207 A DKPA201370207 A DK PA201370207A DK PA201370207 A DKPA201370207 A DK PA201370207A DK 178751 B1 DK178751 B1 DK 178751B1
Authority
DK
Denmark
Prior art keywords
purity silicon
silicon
silane
metal silicide
source material
Prior art date
Application number
DKPA201370207A
Other languages
Danish (da)
Inventor
Olexii Iuriiyovich Tarasevych
Iurii Stephanovych Tarasevych
Iurii Anatalievich Palguiev
Peter Mietkiewich Stagetorn Kolos
Original Assignee
Danica Invest Aps
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Danica Invest Aps filed Critical Danica Invest Aps
Priority to DKPA201370207A priority Critical patent/DK178751B1/en
Priority to PCT/DK2014/050095 priority patent/WO2014166505A1/en
Publication of DK201370207A publication Critical patent/DK201370207A/en
Application granted granted Critical
Publication of DK178751B1 publication Critical patent/DK178751B1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C01B33/039—Purification by conversion of the silicon into a compound, optional purification of the compound, and reconversion into silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/04—Hydrides of silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/06—Metal silicides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

The present application discloses a process for the preparation of high-purity silicon, said process comprising the steps of: a) at least in one cycle treating a particulate silicon source material i) with a sub-stoichiometric amount of an active metal, suchas magnesium, and subsequently ii) with a hydrogen-containing material, such as an ammonium halogenide,thereby obtaining a pre-treated silicon source material; b) alloying said pre-treated silicon source material with i) an active metal, such as magnesium, so as to obtain a basic amount of metal silicide, and optionally purifying said metal silicide; c) reacting the basic amount of metal silicide with a hydrogen-containing material, such as an ammonium halogenide, and obtaining of a basic amount of silane (SiH4); d) purifying said silane (SiH4); and e) thermally decomposing said silane and optionally purifying the resulting silicon to obtain high-purity silicon. The application also discloses an installation intended for the high purity silicon production process in industrial scale.
DKPA201370207A 2013-04-11 2013-04-11 A process for the production of high-purity silicon and an installation therefor DK178751B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DKPA201370207A DK178751B1 (en) 2013-04-11 2013-04-11 A process for the production of high-purity silicon and an installation therefor
PCT/DK2014/050095 WO2014166505A1 (en) 2013-04-11 2014-04-11 A process for the production of high-purity silicon and an installation therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DKPA201370207A DK178751B1 (en) 2013-04-11 2013-04-11 A process for the production of high-purity silicon and an installation therefor

Publications (2)

Publication Number Publication Date
DK201370207A DK201370207A (en) 2014-06-06
DK178751B1 true DK178751B1 (en) 2017-01-02

Family

ID=50928306

Family Applications (1)

Application Number Title Priority Date Filing Date
DKPA201370207A DK178751B1 (en) 2013-04-11 2013-04-11 A process for the production of high-purity silicon and an installation therefor

Country Status (2)

Country Link
DK (1) DK178751B1 (en)
WO (1) WO2014166505A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117886326B (en) * 2024-03-14 2024-07-19 四川优赛思智能科技有限公司 Industrial silicon smelting system with automatic burning-through function

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE562147A (en) *
GB878763A (en) * 1956-11-05 1961-10-04 Plessey Co Ltd Improvements in and relating to a process and apparatus for the production of highly-pure silicon
US3006734A (en) * 1957-11-14 1961-10-31 Plessey Co Ltd Process for preparing pure silicon
GB946105A (en) * 1959-04-27 1964-01-08 Ishizuka Hiroshi Continuous process for the manufacture of pure monosilane and apparatus therefor
US4102764A (en) * 1976-12-29 1978-07-25 Westinghouse Electric Corp. High purity silicon production by arc heater reduction of silicon intermediates
US7972584B2 (en) * 2008-08-25 2011-07-05 Orion Laboratories, Llc Magnesiothermic methods of producing high-purity silicon

Also Published As

Publication number Publication date
DK201370207A (en) 2014-06-06
WO2014166505A1 (en) 2014-10-16

Similar Documents

Publication Publication Date Title
IN2012DN02313A (en)
TN2013000411A1 (en) Branched 3-phenylpropionic acid derivatives and the use thereof
IN2014DN03136A (en)
UA95083C2 (en) Azeotrope compositions comprising 1,2,3,3,3-pentafluoropropene and hydrogen fluoride and processes for the production and purification of 1,2,3,3,3-pentafluoropropene
WO2012087628A3 (en) Production of polycrystalline silicon by the thermal decomposition of dichlorosilane in a fluidized bed reactor
WO2010060630A3 (en) Method and device for the production of high-purity silicon
MX360806B (en) Carbamat-benzoxazinones.
MY156181A (en) Method and system for producing high-purity hydrogen chloride
MX2017009789A (en) Nickel-based catalyst for the decomposition of ammonia.
MY178759A (en) Method for preparing trichlorosilane
MY179882A (en) Method for producing trichlorosilane
MY170523A (en) Process for depositing polycrystalline silicon
MX2015011156A (en) Staged fluorination process and reactor system.
MX2015015064A (en) Galvanized steel sheet and production method therefor.
MY165744A (en) Process for the preparation of trisilylamine from monochlorosilane and ammonia
MY157133A (en) Silicon containing halogenide, method for producing the same, and use of the same
DK178751B1 (en) A process for the production of high-purity silicon and an installation therefor
WO2013004689A3 (en) Aluminium electrolysis plant for line-commutated operation
WO2012099796A3 (en) Reactor system and method of polycrystalline silicon production therewith
IN2013MU02726A (en)
WO2014102000A9 (en) An electro-conductive paste comprising an inorganic reaction system with a high glass transition temperature in the preparation of electrodes in mwt solar cells
UA103480C2 (en) Silicon-containing halogenide, method for its producing and use
WO2011057947A3 (en) Method for producing silicon
MX2015016433A (en) Formed ceramic substrate composition for catalyst integration.
WO2013001373A3 (en) Nanoparticles for a solar plant and a solar cell containing such nanoparticles

Legal Events

Date Code Title Description
PBP Patent lapsed

Effective date: 20180411