JPS5384814A - Method of making high purity silicon by reduction of silicon intermediate using electric arc heating - Google Patents

Method of making high purity silicon by reduction of silicon intermediate using electric arc heating

Info

Publication number
JPS5384814A
JPS5384814A JP15661377A JP15661377A JPS5384814A JP S5384814 A JPS5384814 A JP S5384814A JP 15661377 A JP15661377 A JP 15661377A JP 15661377 A JP15661377 A JP 15661377A JP S5384814 A JPS5384814 A JP S5384814A
Authority
JP
Japan
Prior art keywords
silicon
reduction
high purity
electric arc
making high
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15661377A
Other languages
English (en)
Inventor
Jiyozefu Haabei Jiy Furanshisu
Jieraado Fuei Moorisu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of JPS5384814A publication Critical patent/JPS5384814A/ja
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J10/00—Chemical processes in general for reacting liquid with gaseous media other than in the presence of solid particles, or apparatus specially adapted therefor
    • B01J10/005—Chemical processes in general for reacting liquid with gaseous media other than in the presence of solid particles, or apparatus specially adapted therefor carried out at high temperatures in the presence of a molten material
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B7/00—Heating by electric discharge
    • H05B7/18—Heating by arc discharge
    • H05B7/20—Direct heating by arc discharge, i.e. where at least one end of the arc directly acts on the material to be heated, including additional resistance heating by arc current flowing through the material to be heated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
JP15661377A 1976-12-29 1977-12-27 Method of making high purity silicon by reduction of silicon intermediate using electric arc heating Pending JPS5384814A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/755,383 US4102764A (en) 1976-12-29 1976-12-29 High purity silicon production by arc heater reduction of silicon intermediates

Publications (1)

Publication Number Publication Date
JPS5384814A true JPS5384814A (en) 1978-07-26

Family

ID=25038895

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15661377A Pending JPS5384814A (en) 1976-12-29 1977-12-27 Method of making high purity silicon by reduction of silicon intermediate using electric arc heating

Country Status (5)

Country Link
US (1) US4102764A (ja)
JP (1) JPS5384814A (ja)
CA (1) CA1087377A (ja)
DE (1) DE2756467A1 (ja)
FR (1) FR2376072A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010505721A (ja) * 2006-10-02 2010-02-25 ソラリア・テクノロジェ・ソシエタ・ア・レスポンサビリタ・リミタータ 複数の前駆体を用いた高純度シリコンの製造方法および製造装置
JP2016516665A (ja) * 2013-04-24 2016-06-09 エボニック デグサ ゲーエムベーハーＥｖｏｎｉｋ Ｄｅｇｕｓｓａ ＧｍｂＨ ポリクロロシランの製造方法および製造装置

Families Citing this family (25)

* Cited by examiner, † Cited by third party
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US4102985A (en) * 1977-01-06 1978-07-25 Westinghouse Electric Corp. Arc heater production of silicon involving a hydrogen reduction
US4188368A (en) * 1978-03-29 1980-02-12 Nasa Method of producing silicon
US4265859A (en) * 1978-05-31 1981-05-05 Energy Materials Corporation Apparatus for producing semiconductor grade silicon and replenishing the melt of a crystal growth system
IT1100218B (it) * 1978-11-09 1985-09-28 Montedison Spa Procedimento per la purificazione di silicio
US4239740A (en) * 1979-05-25 1980-12-16 Westinghouse Electric Corp. Production of high purity silicon by a heterogeneous arc heater reduction
DE3016807A1 (de) * 1980-05-02 1981-11-05 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur herstellung von silizium
US4292342A (en) * 1980-05-09 1981-09-29 Motorola, Inc. High pressure plasma deposition of silicon
US4457902A (en) * 1980-10-24 1984-07-03 Watson Keith R High efficiency hydrocarbon reduction of silica
US4487162A (en) * 1980-11-25 1984-12-11 Cann Gordon L Magnetoplasmadynamic apparatus for the separation and deposition of materials
US4471003A (en) * 1980-11-25 1984-09-11 Cann Gordon L Magnetoplasmadynamic apparatus and process for the separation and deposition of materials
US4584181A (en) * 1982-12-27 1986-04-22 Sri International Process and apparatus for obtaining silicon from fluosilicic acid
US4529576A (en) * 1982-12-27 1985-07-16 Sri International Process and apparatus for obtaining silicon from fluosilicic acid
US4559219A (en) * 1984-04-02 1985-12-17 General Electric Company Reducing powder formation in the production of high-purity silicon
US5165965A (en) * 1990-12-28 1992-11-24 Reynolds Metals Company Method for providing predistored images on shrinkable film
NO20033207D0 (no) * 2002-07-31 2003-07-15 Per Kristian Egeberg Fremgangsmåte og reaktor for fremstilling av höyrent silisium, samt anvendelse av fremgangsmåten og reaktoren ved fremstilling av höyrentsilisium fra uraffinert silisium
DE102004010055A1 (de) * 2004-03-02 2005-09-22 Degussa Ag Verfahren zur Herstellung von Silicium
DE102005024041A1 (de) 2005-05-25 2006-11-30 City Solar Ag Verfahren zur Herstellung von Silicium aus Halogensilanen
US20080023070A1 (en) * 2006-07-28 2008-01-31 Sanjai Sinha Methods and systems for manufacturing polycrystalline silicon and silicon-germanium solar cells
DE102006043929B4 (de) * 2006-09-14 2016-10-06 Spawnt Private S.À.R.L. Verfahren zur Herstellung von festen Polysilanmischungen
US7972584B2 (en) * 2008-08-25 2011-07-05 Orion Laboratories, Llc Magnesiothermic methods of producing high-purity silicon
US20100050932A1 (en) * 2008-08-27 2010-03-04 Bp Corporation North America Inc. Apparatus and Method of Direct Electric Melting a Feedstock
DE102008059408A1 (de) * 2008-11-27 2010-06-02 Schmid Silicon Technology Gmbh Verfahren und Vorrichtungen zur Herstellung von Reinstsilizium
DK178751B1 (en) * 2013-04-11 2017-01-02 Danica Invest Aps A process for the production of high-purity silicon and an installation therefor
US9938153B2 (en) * 2016-04-06 2018-04-10 Indian Institute Of Technology Bombay Method of preparing silicon from sand
CN109626378B (zh) * 2019-02-28 2024-02-20 厦门佰事兴新材料科技有限公司 一种多晶硅还原炉电极

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CA651374A (en) * 1962-10-30 Schering Hans Recovery of unused materials in the production of silicon
FR332583A (fr) * 1902-03-12 1903-10-31 Christian Harrebow Homan Procédé de fabrication du silicium au moyen des silicates
US732410A (en) * 1902-10-13 1903-06-30 Christian Harrebow Homan Manufacture of silicon and aluminium from silicates of alumina.
DE1041483B (de) * 1953-07-28 1958-10-23 Siemens Ag Verfahren zur Herstellung reinsten Siliciums
DE1017795B (de) * 1954-05-25 1957-10-17 Siemens Ag Verfahren zur Herstellung reinster kristalliner Substanzen, vorzugsweise Halbleitersubstanzen
DE1054436B (de) * 1956-02-11 1959-04-09 Pechiney Prod Chimiques Sa Verfahren zur Herstellung von kompaktem Silicium hohen Reinheitsgrades
US2955024A (en) * 1956-03-26 1960-10-04 Owens Illinois Glass Co Process for making purified silicon from silicon-containing substances
US2904404A (en) * 1957-01-09 1959-09-15 Raytheon Co Preparation of silicon
US2955966A (en) * 1957-07-03 1960-10-11 Int Standard Electric Corp Manufacture of semiconductor material
FR1207765A (fr) * 1958-07-10 1960-02-18 Préparation de silicium pur par réduction
FR76571E (fr) * 1959-10-19 1961-11-10 Int Standard Electric Corp Méthode de production du silicium à haute pureté
DE1123301B (de) * 1960-06-21 1962-02-08 Siemens Ag Verfahren zum Herstellen der halbleitenden Elemente Silicium und Germanium
DE1129145B (de) * 1960-07-07 1962-05-10 Knapsack Ag Verfahren zur Herstellung von hochreinem Silicium
US3325314A (en) * 1961-10-27 1967-06-13 Siemens Ag Semi-conductor product and method for making same
DE1290712B (de) * 1966-01-15 1969-03-13 Hoechst Ag Gegen den Abbau durch Licht und Waerme stabilisierte Formmassen
CH525705A (de) * 1968-12-24 1972-07-31 Lonza Ag Verwendung von vortex-stabilisierten Plasmabrennern zur Durchführung von chemischen Reaktionen
US3704094A (en) * 1969-11-19 1972-11-28 Union Carbide Corp Process for the production of elemental silicon
US3963838A (en) * 1974-05-24 1976-06-15 Texas Instruments Incorporated Method of operating a quartz fluidized bed reactor for the production of silicon
IT1055884B (it) * 1976-02-17 1982-01-11 Montedison Spa Procedimento ad arco plasma di prodotti ceramici metallici e simili

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010505721A (ja) * 2006-10-02 2010-02-25 ソラリア・テクノロジェ・ソシエタ・ア・レスポンサビリタ・リミタータ 複数の前駆体を用いた高純度シリコンの製造方法および製造装置
JP2016516665A (ja) * 2013-04-24 2016-06-09 エボニック デグサ ゲーエムベーハーＥｖｏｎｉｋ Ｄｅｇｕｓｓａ ＧｍｂＨ ポリクロロシランの製造方法および製造装置

Also Published As

Publication number Publication date
DE2756467A1 (de) 1978-07-13
CA1087377A (en) 1980-10-14
US4102764A (en) 1978-07-25
FR2376072A1 (fr) 1978-07-28
DE2756467C2 (ja) 1987-06-11

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