DE3017016A1 - Verfahren und vorrichtung zur herstellung von monokristallinem silicium in bandform - Google Patents
Verfahren und vorrichtung zur herstellung von monokristallinem silicium in bandformInfo
- Publication number
- DE3017016A1 DE3017016A1 DE19803017016 DE3017016A DE3017016A1 DE 3017016 A1 DE3017016 A1 DE 3017016A1 DE 19803017016 DE19803017016 DE 19803017016 DE 3017016 A DE3017016 A DE 3017016A DE 3017016 A1 DE3017016 A1 DE 3017016A1
- Authority
- DE
- Germany
- Prior art keywords
- cylinder
- melting zone
- plane
- silicon
- devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims description 34
- 229910052710 silicon Inorganic materials 0.000 title claims description 20
- 239000010703 silicon Substances 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000002844 melting Methods 0.000 claims description 36
- 230000008018 melting Effects 0.000 claims description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 10
- 238000010894 electron beam technology Methods 0.000 claims description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 8
- 238000002425 crystallisation Methods 0.000 claims description 7
- 230000008025 crystallization Effects 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 6
- 230000007935 neutral effect Effects 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 4
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000005484 gravity Effects 0.000 claims description 2
- 238000010790 dilution Methods 0.000 claims 1
- 239000012895 dilution Substances 0.000 claims 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 230000005486 microgravity Effects 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
- C30B15/16—Heating of the melt or the crystallised materials by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/002—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/06—Non-vertical pulling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/903—Dendrite or web or cage technique
- Y10S117/904—Laser beam
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/905—Electron beam
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Recrystallisation Techniques (AREA)
- Silicon Compounds (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7911174A FR2455480A1 (fr) | 1979-05-03 | 1979-05-03 | Moyens pour la fabrication de silicium monocristallin sous la forme d'un ruban |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3017016A1 true DE3017016A1 (de) | 1980-11-20 |
Family
ID=9224973
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19803017016 Withdrawn DE3017016A1 (de) | 1979-05-03 | 1980-05-02 | Verfahren und vorrichtung zur herstellung von monokristallinem silicium in bandform |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4309239A (enExample) |
| JP (1) | JPS55149189A (enExample) |
| DE (1) | DE3017016A1 (enExample) |
| FR (1) | FR2455480A1 (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0040488A1 (en) * | 1980-05-15 | 1981-11-25 | International Business Machines Corporation | Method of fabricating a ribbon structure |
| EP0072565A3 (en) * | 1981-08-19 | 1985-05-08 | Heliotronic Forschungs- Und Entwicklungsgesellschaft Fur Solarzellen-Grundstoffe Mbh | Process for forming large to single crystal ribbons of semiconductor material |
| DE10311893B3 (de) * | 2003-03-18 | 2004-10-28 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zur grossflächigen Herstellung von Solarzellen |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4515650A (en) * | 1980-05-15 | 1985-05-07 | International Business Machines Corporation | Method for producing large grained semiconductor ribbons |
| US4383130A (en) * | 1981-05-04 | 1983-05-10 | Alpha Solarco Inc. | Solar energy cell and method of manufacture |
| US4468279A (en) * | 1982-08-16 | 1984-08-28 | Avco Everett Research Laboratory, Inc. | Method for laser melting of silicon |
| US4650541A (en) * | 1984-09-12 | 1987-03-17 | The United States Of America As Represented By The United States Department Of Energy | Apparatus and method for the horizontal, crucible-free growth of silicon sheet crystals |
| US5205997A (en) * | 1989-07-31 | 1993-04-27 | Grumman Aerospace Corporation | Ampoule for crystal growth |
| US5454879A (en) * | 1994-03-17 | 1995-10-03 | Bolger; Stephen R. | Helically grown monolithic high voltage photovoltaic devices and method therefor |
| US7976629B2 (en) * | 2008-01-01 | 2011-07-12 | Adam Alexander Brailove | Crystal film fabrication |
| US9404198B2 (en) * | 2012-07-30 | 2016-08-02 | Rayton Solar Inc. | Processes and apparatuses for manufacturing wafers |
| US9499921B2 (en) | 2012-07-30 | 2016-11-22 | Rayton Solar Inc. | Float zone silicon wafer manufacturing system and related process |
| JP7720080B2 (ja) * | 2021-08-11 | 2025-08-07 | 株式会社クリスタルシステム | 薄板状単結晶製造装置および薄板状単結晶製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2633961C2 (de) * | 1975-07-28 | 1986-01-02 | Mitsubishi Kinzoku K.K. | Verfahren zum Ziehen eines dünnen Halbleiter-Einkristallbandes |
| DE2649223C2 (de) * | 1976-10-28 | 1983-02-17 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen von einkristallinen Halbleitermaterialbändern durch senkrechtes Ziehen aus einem Schmelzfilm |
| US4102767A (en) * | 1977-04-14 | 1978-07-25 | Westinghouse Electric Corp. | Arc heater method for the production of single crystal silicon |
-
1979
- 1979-05-03 FR FR7911174A patent/FR2455480A1/fr active Granted
-
1980
- 1980-04-28 US US06/144,574 patent/US4309239A/en not_active Expired - Lifetime
- 1980-05-02 DE DE19803017016 patent/DE3017016A1/de not_active Withdrawn
- 1980-05-02 JP JP5800780A patent/JPS55149189A/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0040488A1 (en) * | 1980-05-15 | 1981-11-25 | International Business Machines Corporation | Method of fabricating a ribbon structure |
| EP0072565A3 (en) * | 1981-08-19 | 1985-05-08 | Heliotronic Forschungs- Und Entwicklungsgesellschaft Fur Solarzellen-Grundstoffe Mbh | Process for forming large to single crystal ribbons of semiconductor material |
| DE10311893B3 (de) * | 2003-03-18 | 2004-10-28 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zur grossflächigen Herstellung von Solarzellen |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2455480A1 (fr) | 1980-11-28 |
| JPS55149189A (en) | 1980-11-20 |
| FR2455480B1 (enExample) | 1985-03-29 |
| US4309239A (en) | 1982-01-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8139 | Disposal/non-payment of the annual fee |