FR2404280A1 - Memoire non-volatile effacable par mots, realisee suivant la technique a porte flottante - Google Patents

Memoire non-volatile effacable par mots, realisee suivant la technique a porte flottante

Info

Publication number
FR2404280A1
FR2404280A1 FR7827511A FR7827511A FR2404280A1 FR 2404280 A1 FR2404280 A1 FR 2404280A1 FR 7827511 A FR7827511 A FR 7827511A FR 7827511 A FR7827511 A FR 7827511A FR 2404280 A1 FR2404280 A1 FR 2404280A1
Authority
FR
France
Prior art keywords
volatile memory
gate
floating
word
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7827511A
Other languages
English (en)
Other versions
FR2404280B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2404280A1 publication Critical patent/FR2404280A1/fr
Application granted granted Critical
Publication of FR2404280B1 publication Critical patent/FR2404280B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling

Abstract

L'invention concerne une mémoire non-volatile effaçable par mots, réalisée suivant la technique à porte flottante. Dans cette mémoire comportant des cellules 1 à au moins un transistor à effet de champ, possédant sur un substrat 2 une porte flottante de mémorisation 13 enserrée par des couches isolantes 10, 17 et une porte de commande 12 isolée, la programmation du transistor à effet de champ, c'est-à-dire la charge de la porte flottante, est réalisée avec le même mécanisme physique que l'effacement ou extinction du transistor à effet de champ, c'est-à-dire la décharge de la porte flottante, à l'aide d'une tension élevée possédant une polarité appropriée et appliquée entre la porte de mémorisation et le substrat. Application notamment aux mémoires de programmes en téléphonie et en télévision.
FR7827511A 1977-09-27 1978-09-26 Memoire non-volatile effacable par mots, realisee suivant la technique a porte flottante Granted FR2404280A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19772743422 DE2743422A1 (de) 1977-09-27 1977-09-27 Wortweise loeschbarer, nicht fluechtiger speicher in floating-gate-technik

Publications (2)

Publication Number Publication Date
FR2404280A1 true FR2404280A1 (fr) 1979-04-20
FR2404280B1 FR2404280B1 (fr) 1984-10-26

Family

ID=6020009

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7827511A Granted FR2404280A1 (fr) 1977-09-27 1978-09-26 Memoire non-volatile effacable par mots, realisee suivant la technique a porte flottante

Country Status (5)

Country Link
US (1) US4209849A (fr)
JP (1) JPS5457972A (fr)
DE (1) DE2743422A1 (fr)
FR (1) FR2404280A1 (fr)
GB (1) GB2005915B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2455333A1 (fr) * 1979-04-26 1980-11-21 Itt Cellule de memoire a semi-conducteur programmable

Families Citing this family (34)

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US4282540A (en) * 1977-12-23 1981-08-04 International Business Machines Corporation FET Containing stacked gates
DE2828855C2 (de) * 1978-06-30 1982-11-18 Siemens AG, 1000 Berlin und 8000 München Wortweise elektrisch umprogrammierbarer, nichtflüchtiger Speicher sowie Verfahren zum Löschen bzw. Einschreiben eines bzw. in einen solchen Speicher(s)
US4300212A (en) * 1979-01-24 1981-11-10 Xicor, Inc. Nonvolatile static random access memory devices
DE3031748A1 (de) * 1979-08-24 1982-03-04 Centre Electronique Horloger S.A., Neuchâtel Elektrisch loeschbares und wiederholt programmierbares speicherelement zum dauerhaften speichern
JPS5649570A (en) * 1979-09-28 1981-05-06 Hitachi Ltd Semiconductor memory and its manufacturing process
JPS56120166A (en) * 1980-02-27 1981-09-21 Hitachi Ltd Semiconductor ic device and manufacture thereof
DE3136517C2 (de) * 1980-09-26 1985-02-07 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Nichtflüchtige Halbleiter-Speichervorrichtung
EP0053075B1 (fr) * 1980-11-26 1988-04-20 Fujitsu Limited Mémoire non volatile
US4495427A (en) * 1980-12-05 1985-01-22 Rca Corporation Programmable logic gates and networks
JPS57157573A (en) * 1981-03-25 1982-09-29 Fujitsu Ltd Semiconductor non-volatile memory cell
DE3123654A1 (de) * 1981-06-15 1983-01-20 Vdo Adolf Schindling Ag, 6000 Frankfurt Schaltungsanordnung zur speicherung eines mehrstelligen dekadischen zaehlwerts einer von einem fahrzeug zurueckgelegten wegstrecke
JPS5857750A (ja) * 1981-10-01 1983-04-06 Seiko Instr & Electronics Ltd 不揮発性半導体メモリ
JPS58130571A (ja) * 1982-01-29 1983-08-04 Hitachi Ltd 半導体装置
JPS58157170A (ja) * 1982-03-15 1983-09-19 Toshiba Corp 不揮発性半導体メモリ装置
US4608585A (en) * 1982-07-30 1986-08-26 Signetics Corporation Electrically erasable PROM cell
USRE34535E (en) * 1983-02-23 1994-02-08 Texas Instruments Incorporated Floating gate memory with improved dielectric
DE3482847D1 (de) * 1983-04-18 1990-09-06 Toshiba Kawasaki Kk Halbleiterspeichervorrichtung mit einem schwebenden gate.
US4590503A (en) * 1983-07-21 1986-05-20 Honeywell Inc. Electrically erasable programmable read only memory
US4599707A (en) * 1984-03-01 1986-07-08 Signetics Corporation Byte wide EEPROM with individual write circuits and write prevention means
JPS61274368A (ja) * 1985-02-28 1986-12-04 テキサス　インスツルメンツ　インコ−ポレイテツド 電気的に消去可能なプログラム可能な固定メモリ・セル
US4683554A (en) * 1985-09-13 1987-07-28 Ncr Corporation Direct write nonvolatile memory cells
JPS6273653A (ja) * 1985-09-26 1987-04-04 Mitsubishi Electric Corp 容量回路構造
US4835741A (en) * 1986-06-02 1989-05-30 Texas Instruments Incorporated Frasable electrically programmable read only memory cell using a three dimensional trench floating gate
US4796228A (en) * 1986-06-02 1989-01-03 Texas Instruments Incorporated Erasable electrically programmable read only memory cell using trench edge tunnelling
IT1198108B (it) * 1986-11-18 1988-12-21 Sgs Microelettronica Spa Cella di memori aeeprom a due livelli di polisilicio con zona di ossiso di tunnel
US4924437A (en) * 1987-12-09 1990-05-08 Texas Instruments Incorporated Erasable programmable memory including buried diffusion source/drain lines and erase lines
US4839705A (en) * 1987-12-16 1989-06-13 Texas Instruments Incorporated X-cell EEPROM array
KR920001402B1 (ko) * 1988-11-29 1992-02-13 삼성전자 주식회사 불휘발성 반도체 기억소자
US5122985A (en) * 1990-04-16 1992-06-16 Giovani Santin Circuit and method for erasing eeprom memory arrays to prevent over-erased cells
US5753525A (en) * 1995-12-19 1998-05-19 International Business Machines Corporation Method of making EEPROM cell with improved coupling ratio
US5790455A (en) * 1997-01-02 1998-08-04 John Caywood Low voltage single supply CMOS electrically erasable read-only memory
US5986931A (en) 1997-01-02 1999-11-16 Caywood; John M. Low voltage single CMOS electrically erasable read-only memory
US6201732B1 (en) 1997-01-02 2001-03-13 John M. Caywood Low voltage single CMOS electrically erasable read-only memory
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3500142A (en) * 1967-06-05 1970-03-10 Bell Telephone Labor Inc Field effect semiconductor apparatus with memory involving entrapment of charge carriers
US3836992A (en) * 1973-03-16 1974-09-17 Ibm Electrically erasable floating gate fet memory cell
DE2548903A1 (de) * 1974-11-01 1976-05-06 Hitachi Ltd Langfristig stabiler halbleiterspeicher und verfahren zu seiner herstellung
US4099196A (en) * 1977-06-29 1978-07-04 Intel Corporation Triple layer polysilicon cell

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3651490A (en) * 1969-06-12 1972-03-21 Nippon Electric Co Three dimensional memory utilizing semiconductor memory devices
US4087795A (en) * 1974-09-20 1978-05-02 Siemens Aktiengesellschaft Memory field effect storage device
US3996657A (en) * 1974-12-30 1976-12-14 Intel Corporation Double polycrystalline silicon gate memory device
US4112509A (en) * 1976-12-27 1978-09-05 Texas Instruments Incorporated Electrically alterable floating gate semiconductor memory device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3500142A (en) * 1967-06-05 1970-03-10 Bell Telephone Labor Inc Field effect semiconductor apparatus with memory involving entrapment of charge carriers
US3836992A (en) * 1973-03-16 1974-09-17 Ibm Electrically erasable floating gate fet memory cell
DE2548903A1 (de) * 1974-11-01 1976-05-06 Hitachi Ltd Langfristig stabiler halbleiterspeicher und verfahren zu seiner herstellung
US4099196A (en) * 1977-06-29 1978-07-04 Intel Corporation Triple layer polysilicon cell

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/77 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2455333A1 (fr) * 1979-04-26 1980-11-21 Itt Cellule de memoire a semi-conducteur programmable

Also Published As

Publication number Publication date
DE2743422A1 (de) 1979-03-29
FR2404280B1 (fr) 1984-10-26
US4209849A (en) 1980-06-24
JPS5457972A (en) 1979-05-10
GB2005915B (en) 1982-04-21
GB2005915A (en) 1979-04-25

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