FR2455333A1 - Cellule de memoire a semi-conducteur programmable - Google Patents
Cellule de memoire a semi-conducteur programmableInfo
- Publication number
- FR2455333A1 FR2455333A1 FR8009315A FR8009315A FR2455333A1 FR 2455333 A1 FR2455333 A1 FR 2455333A1 FR 8009315 A FR8009315 A FR 8009315A FR 8009315 A FR8009315 A FR 8009315A FR 2455333 A1 FR2455333 A1 FR 2455333A1
- Authority
- FR
- France
- Prior art keywords
- electrode
- grid
- memory cell
- zone
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000003990 capacitor Substances 0.000 abstract 2
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 230000037430 deletion Effects 0.000 abstract 1
- 238000012217 deletion Methods 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
CELLULE DE MEMOIRE A TRANSISTOR INTEGRE TR DE TYPE FAMOS (FLOATING AVALANCHE INJECTION MOS: TRANSISTOR METAL-OXYDE D'AVALANCHE) A CANAL N, DONT LA GRILLE COMPORTE DES REGIONS LATERALES PERMETTANT SON COUPLAGE CAPACITIF AVEC DES ELECTRODES DE PROGRAMMATION. SELON L'INVENTION, L'ELECTRODE D'EFFACEMENT 3 EST CONSTITUEE PAR UNE ZONE DIFFUSEE N 3 DANS LE SUBSTRAT DE TYPE P ET UN PREMIER CONDENSATEUR CE EST FORME PAR UNE REGION 11 DE LA COUCHE DE GRILLE 1 QUI N'EST SEPAREE DE LA ZONE 3 QUE PAR UNE EPAISSEUR D'OXYDE DE 100 A 300A. UNE AUTRE REGION 11 DE LA COUCHE DE GRILLE EST COUPLEE A UNE AUTRE ZONE DIFFUSEE 2 CONSTITUANT L'ELECTRODE D'ECRITURE PAR UNE CAPACITE AU MOINS QUATRE FOIS PLUS GRANDE QUE LA PREMIERE. L'APPLICATION D'UNE IMPULSION POSITIVE D'ECRITURE UW A L'ELECTRODE 6 OU D'UNE IMPULSION POSITIVE D'EFFACEMENT UE A L'ELECTRODE 3 ENTRAINE RESPECTIVEMENT UN COURANT DE CHARGE OU DE DECHARGE DE LA GRILLE 1 PAR EFFET TUNNEL DANS LE DIELECTRIQUE 4 DU PREMIER CONDENSATEUR. APPLICATION AUX MEMOIRES MOS PROGRAMMABLES ET REPROGRAMMABLES ELECTRIQUEMENT.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2916884A DE2916884C3 (de) | 1979-04-26 | 1979-04-26 | Programmierbare Halbleiterspeicherzelle |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2455333A1 true FR2455333A1 (fr) | 1980-11-21 |
FR2455333B1 FR2455333B1 (fr) | 1986-02-28 |
Family
ID=6069307
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8009315A Expired FR2455333B1 (fr) | 1979-04-26 | 1980-04-25 | Cellule de memoire a semi-conducteur programmable |
Country Status (6)
Country | Link |
---|---|
US (1) | US4288863A (fr) |
JP (1) | JPS55160471A (fr) |
DE (1) | DE2916884C3 (fr) |
FR (1) | FR2455333B1 (fr) |
GB (1) | GB2049278B (fr) |
IT (1) | IT1193386B (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0054355A2 (fr) * | 1980-12-08 | 1982-06-23 | Kabushiki Kaisha Toshiba | Dispositif semiconducteur à mémoire |
EP0123571A1 (fr) * | 1983-03-11 | 1984-10-31 | STMicroelectronics S.A. | Mémoire permanente à transistors à grille flottante, électriquement reprogrammable sans effacement préalable |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2645585B2 (ja) * | 1989-03-10 | 1997-08-25 | 工業技術院長 | 半導体不揮発性メモリ及びその書き込み方法 |
DE2935291A1 (de) * | 1979-08-31 | 1981-03-19 | Siemens AG, 1000 Berlin und 8000 München | Monolithische statische speicherzelle |
JPS57157573A (en) * | 1981-03-25 | 1982-09-29 | Fujitsu Ltd | Semiconductor non-volatile memory cell |
US4376986A (en) * | 1981-09-30 | 1983-03-15 | Burroughs Corporation | Double Lambda diode memory cell |
JPS58121680A (ja) * | 1982-01-12 | 1983-07-20 | Mitsubishi Electric Corp | 半導体不揮発性記憶装置 |
JPS58121679A (ja) * | 1982-01-12 | 1983-07-20 | Mitsubishi Electric Corp | 半導体不揮発性記憶装置 |
JPS58130571A (ja) * | 1982-01-29 | 1983-08-04 | Hitachi Ltd | 半導体装置 |
SE8301228L (sv) * | 1982-03-09 | 1984-08-19 | Rca Corp | Halvledarminne med frisvevande styre |
JPS58157170A (ja) * | 1982-03-15 | 1983-09-19 | Toshiba Corp | 不揮発性半導体メモリ装置 |
JPS59155968A (ja) * | 1983-02-25 | 1984-09-05 | Toshiba Corp | 半導体記憶装置 |
US4578777A (en) * | 1983-07-11 | 1986-03-25 | Signetics Corporation | One step write circuit arrangement for EEPROMS |
US4566080A (en) * | 1983-07-11 | 1986-01-21 | Signetics Corporation | Byte wide EEPROM with individual write circuits |
US4683554A (en) * | 1985-09-13 | 1987-07-28 | Ncr Corporation | Direct write nonvolatile memory cells |
JPS6289364A (ja) * | 1985-10-16 | 1987-04-23 | Seiko Instr & Electronics Ltd | 不揮発性半導体記憶装置 |
US4748593A (en) * | 1986-09-08 | 1988-05-31 | Ncr Corporation | High speed nonvolatile memory cell |
US4769788A (en) * | 1986-09-22 | 1988-09-06 | Ncr Corporation | Shared line direct write nonvolatile memory cell array |
US4924278A (en) * | 1987-06-19 | 1990-05-08 | Advanced Micro Devices, Inc. | EEPROM using a merged source and control gate |
US4924437A (en) * | 1987-12-09 | 1990-05-08 | Texas Instruments Incorporated | Erasable programmable memory including buried diffusion source/drain lines and erase lines |
US4839705A (en) * | 1987-12-16 | 1989-06-13 | Texas Instruments Incorporated | X-cell EEPROM array |
JPH02125470A (ja) * | 1988-06-15 | 1990-05-14 | Seiko Instr Inc | 半導体不揮発性メモリ |
US5324677A (en) * | 1988-06-15 | 1994-06-28 | Seiko Instruments Inc. | Method of making memory cell and a peripheral circuit |
US5055897A (en) * | 1988-07-27 | 1991-10-08 | Intel Corporation | Semiconductor cell for neural network and the like |
DE68916335T2 (de) * | 1988-08-08 | 1995-01-05 | Nat Semiconductor Corp | Elektrisch löschbare und programmierbare Nurlese-Bipolar-Feldeffekt-Speicherzelle und Verfahren zu deren Herstellung. |
JP3293893B2 (ja) * | 1991-12-09 | 2002-06-17 | 株式会社東芝 | 半導体不揮発性記憶装置の製造方法 |
US5440159A (en) * | 1993-09-20 | 1995-08-08 | Atmel Corporation | Single layer polysilicon EEPROM having uniform thickness gate oxide/capacitor dielectric layer |
US5736764A (en) * | 1995-11-21 | 1998-04-07 | Programmable Microelectronics Corporation | PMOS flash EEPROM cell with single poly |
US5780341A (en) * | 1996-12-06 | 1998-07-14 | Halo Lsi Design & Device Technology, Inc. | Low voltage EEPROM/NVRAM transistors and making method |
FR2760887A1 (fr) * | 1997-03-12 | 1998-09-18 | Mixed Silicon Structures | Procede de memorisation electrique non volatile d'un bit, et dispositif de memoire correspondant |
GB2412468A (en) * | 2004-03-26 | 2005-09-28 | Zarlink Semiconductor Ab | Testing an EEPROM utilising an additional select transistor and test line |
US7755941B2 (en) | 2007-02-23 | 2010-07-13 | Panasonic Corporation | Nonvolatile semiconductor memory device |
US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2298160A1 (fr) * | 1975-01-17 | 1976-08-13 | Philips Nv | Memoire semi-conductrice |
FR2404280A1 (fr) * | 1977-09-27 | 1979-04-20 | Siemens Ag | Memoire non-volatile effacable par mots, realisee suivant la technique a porte flottante |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4004159A (en) * | 1973-05-18 | 1977-01-18 | Sanyo Electric Co., Ltd. | Electrically reprogrammable nonvolatile floating gate semi-conductor memory device and method of operation |
US4115914A (en) * | 1976-03-26 | 1978-09-26 | Hughes Aircraft Company | Electrically erasable non-volatile semiconductor memory |
-
1979
- 1979-04-26 DE DE2916884A patent/DE2916884C3/de not_active Expired
-
1980
- 1980-03-21 US US06/132,587 patent/US4288863A/en not_active Expired - Lifetime
- 1980-04-22 GB GB8013261A patent/GB2049278B/en not_active Expired
- 1980-04-23 JP JP5301980A patent/JPS55160471A/ja active Pending
- 1980-04-24 IT IT21665/80A patent/IT1193386B/it active
- 1980-04-25 FR FR8009315A patent/FR2455333B1/fr not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2298160A1 (fr) * | 1975-01-17 | 1976-08-13 | Philips Nv | Memoire semi-conductrice |
FR2404280A1 (fr) * | 1977-09-27 | 1979-04-20 | Siemens Ag | Memoire non-volatile effacable par mots, realisee suivant la technique a porte flottante |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0054355A2 (fr) * | 1980-12-08 | 1982-06-23 | Kabushiki Kaisha Toshiba | Dispositif semiconducteur à mémoire |
EP0054355A3 (en) * | 1980-12-08 | 1983-05-25 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor memory device |
EP0123571A1 (fr) * | 1983-03-11 | 1984-10-31 | STMicroelectronics S.A. | Mémoire permanente à transistors à grille flottante, électriquement reprogrammable sans effacement préalable |
Also Published As
Publication number | Publication date |
---|---|
IT1193386B (it) | 1988-06-15 |
GB2049278A (en) | 1980-12-17 |
DE2916884B2 (de) | 1981-03-26 |
FR2455333B1 (fr) | 1986-02-28 |
US4288863A (en) | 1981-09-08 |
GB2049278B (en) | 1984-05-16 |
DE2916884A1 (de) | 1980-10-30 |
DE2916884C3 (de) | 1981-12-10 |
JPS55160471A (en) | 1980-12-13 |
IT8021665A0 (it) | 1980-04-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |