IT1193386B - Elemento di memoria programmabile a semiconduttore - Google Patents
Elemento di memoria programmabile a semiconduttoreInfo
- Publication number
- IT1193386B IT1193386B IT21665/80A IT2166580A IT1193386B IT 1193386 B IT1193386 B IT 1193386B IT 21665/80 A IT21665/80 A IT 21665/80A IT 2166580 A IT2166580 A IT 2166580A IT 1193386 B IT1193386 B IT 1193386B
- Authority
- IT
- Italy
- Prior art keywords
- memory element
- programmable memory
- semiconductor programmable
- semiconductor
- programmable
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2916884A DE2916884C3 (de) | 1979-04-26 | 1979-04-26 | Programmierbare Halbleiterspeicherzelle |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8021665A0 IT8021665A0 (it) | 1980-04-24 |
IT1193386B true IT1193386B (it) | 1988-06-15 |
Family
ID=6069307
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT21665/80A IT1193386B (it) | 1979-04-26 | 1980-04-24 | Elemento di memoria programmabile a semiconduttore |
Country Status (6)
Country | Link |
---|---|
US (1) | US4288863A (it) |
JP (1) | JPS55160471A (it) |
DE (1) | DE2916884C3 (it) |
FR (1) | FR2455333B1 (it) |
GB (1) | GB2049278B (it) |
IT (1) | IT1193386B (it) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2645585B2 (ja) * | 1989-03-10 | 1997-08-25 | 工業技術院長 | 半導体不揮発性メモリ及びその書き込み方法 |
DE2935291A1 (de) * | 1979-08-31 | 1981-03-19 | Siemens AG, 1000 Berlin und 8000 München | Monolithische statische speicherzelle |
EP0054355B1 (en) * | 1980-12-08 | 1986-04-16 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
JPS57157573A (en) * | 1981-03-25 | 1982-09-29 | Fujitsu Ltd | Semiconductor non-volatile memory cell |
US4376986A (en) * | 1981-09-30 | 1983-03-15 | Burroughs Corporation | Double Lambda diode memory cell |
JPS58121679A (ja) * | 1982-01-12 | 1983-07-20 | Mitsubishi Electric Corp | 半導体不揮発性記憶装置 |
JPS58121680A (ja) * | 1982-01-12 | 1983-07-20 | Mitsubishi Electric Corp | 半導体不揮発性記憶装置 |
JPS58130571A (ja) * | 1982-01-29 | 1983-08-04 | Hitachi Ltd | 半導体装置 |
SE8301228L (sv) * | 1982-03-09 | 1984-08-19 | Rca Corp | Halvledarminne med frisvevande styre |
JPS58157170A (ja) * | 1982-03-15 | 1983-09-19 | Toshiba Corp | 不揮発性半導体メモリ装置 |
JPS59155968A (ja) * | 1983-02-25 | 1984-09-05 | Toshiba Corp | 半導体記憶装置 |
FR2542490B1 (fr) * | 1983-03-11 | 1988-10-07 | Efcis | Memoire permanente a transistors a grille flottante, electriquement reprogrammable sans effacement prealable |
US4578777A (en) * | 1983-07-11 | 1986-03-25 | Signetics Corporation | One step write circuit arrangement for EEPROMS |
US4566080A (en) * | 1983-07-11 | 1986-01-21 | Signetics Corporation | Byte wide EEPROM with individual write circuits |
US4683554A (en) * | 1985-09-13 | 1987-07-28 | Ncr Corporation | Direct write nonvolatile memory cells |
JPS6289364A (ja) * | 1985-10-16 | 1987-04-23 | Seiko Instr & Electronics Ltd | 不揮発性半導体記憶装置 |
US4748593A (en) * | 1986-09-08 | 1988-05-31 | Ncr Corporation | High speed nonvolatile memory cell |
US4769788A (en) * | 1986-09-22 | 1988-09-06 | Ncr Corporation | Shared line direct write nonvolatile memory cell array |
US4924278A (en) * | 1987-06-19 | 1990-05-08 | Advanced Micro Devices, Inc. | EEPROM using a merged source and control gate |
US4924437A (en) * | 1987-12-09 | 1990-05-08 | Texas Instruments Incorporated | Erasable programmable memory including buried diffusion source/drain lines and erase lines |
US4839705A (en) * | 1987-12-16 | 1989-06-13 | Texas Instruments Incorporated | X-cell EEPROM array |
US5324677A (en) * | 1988-06-15 | 1994-06-28 | Seiko Instruments Inc. | Method of making memory cell and a peripheral circuit |
JPH02125470A (ja) * | 1988-06-15 | 1990-05-14 | Seiko Instr Inc | 半導体不揮発性メモリ |
US5055897A (en) * | 1988-07-27 | 1991-10-08 | Intel Corporation | Semiconductor cell for neural network and the like |
EP0354457B1 (en) * | 1988-08-08 | 1994-06-22 | National Semiconductor Corporation | A bipolar field-effect electrically erasable programmable read only memory cell and method of manufacture |
JP3293893B2 (ja) * | 1991-12-09 | 2002-06-17 | 株式会社東芝 | 半導体不揮発性記憶装置の製造方法 |
US5440159A (en) * | 1993-09-20 | 1995-08-08 | Atmel Corporation | Single layer polysilicon EEPROM having uniform thickness gate oxide/capacitor dielectric layer |
US5736764A (en) * | 1995-11-21 | 1998-04-07 | Programmable Microelectronics Corporation | PMOS flash EEPROM cell with single poly |
US5780341A (en) * | 1996-12-06 | 1998-07-14 | Halo Lsi Design & Device Technology, Inc. | Low voltage EEPROM/NVRAM transistors and making method |
FR2760887A1 (fr) * | 1997-03-12 | 1998-09-18 | Mixed Silicon Structures | Procede de memorisation electrique non volatile d'un bit, et dispositif de memoire correspondant |
GB2412468A (en) * | 2004-03-26 | 2005-09-28 | Zarlink Semiconductor Ab | Testing an EEPROM utilising an additional select transistor and test line |
US7755941B2 (en) | 2007-02-23 | 2010-07-13 | Panasonic Corporation | Nonvolatile semiconductor memory device |
US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4004159A (en) * | 1973-05-18 | 1977-01-18 | Sanyo Electric Co., Ltd. | Electrically reprogrammable nonvolatile floating gate semi-conductor memory device and method of operation |
NL7500550A (nl) * | 1975-01-17 | 1976-07-20 | Philips Nv | Halfgeleider-geheugeninrichting. |
US4115914A (en) * | 1976-03-26 | 1978-09-26 | Hughes Aircraft Company | Electrically erasable non-volatile semiconductor memory |
DE2743422A1 (de) * | 1977-09-27 | 1979-03-29 | Siemens Ag | Wortweise loeschbarer, nicht fluechtiger speicher in floating-gate-technik |
-
1979
- 1979-04-26 DE DE2916884A patent/DE2916884C3/de not_active Expired
-
1980
- 1980-03-21 US US06/132,587 patent/US4288863A/en not_active Expired - Lifetime
- 1980-04-22 GB GB8013261A patent/GB2049278B/en not_active Expired
- 1980-04-23 JP JP5301980A patent/JPS55160471A/ja active Pending
- 1980-04-24 IT IT21665/80A patent/IT1193386B/it active
- 1980-04-25 FR FR8009315A patent/FR2455333B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB2049278A (en) | 1980-12-17 |
IT8021665A0 (it) | 1980-04-24 |
DE2916884C3 (de) | 1981-12-10 |
FR2455333B1 (fr) | 1986-02-28 |
JPS55160471A (en) | 1980-12-13 |
DE2916884A1 (de) | 1980-10-30 |
FR2455333A1 (fr) | 1980-11-21 |
DE2916884B2 (de) | 1981-03-26 |
GB2049278B (en) | 1984-05-16 |
US4288863A (en) | 1981-09-08 |
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