SE8301228L - Halvledarminne med frisvevande styre - Google Patents

Halvledarminne med frisvevande styre

Info

Publication number
SE8301228L
SE8301228L SE8301228A SE8301228A SE8301228L SE 8301228 L SE8301228 L SE 8301228L SE 8301228 A SE8301228 A SE 8301228A SE 8301228 A SE8301228 A SE 8301228A SE 8301228 L SE8301228 L SE 8301228L
Authority
SE
Sweden
Prior art keywords
line
floating
gate
free
capacitance
Prior art date
Application number
SE8301228A
Other languages
Unknown language ( )
English (en)
Other versions
SE8301228D0 (sv
Inventor
R G Stewart
A C Ipri
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/467,643 external-priority patent/US4577215A/en
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE8301228D0 publication Critical patent/SE8301228D0/sv
Publication of SE8301228L publication Critical patent/SE8301228L/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Power-Operated Mechanisms For Wings (AREA)
  • Cold Air Circulating Systems And Constructional Details In Refrigerators (AREA)
SE8301228A 1982-03-09 1983-03-07 Halvledarminne med frisvevande styre SE8301228L (sv)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB8206905 1982-03-09
US06/467,643 US4577215A (en) 1983-02-18 1983-02-18 Dual word line, electrically alterable, nonvolatile floating gate memory device

Publications (2)

Publication Number Publication Date
SE8301228D0 SE8301228D0 (sv) 1983-03-07
SE8301228L true SE8301228L (sv) 1984-08-19

Family

ID=26282206

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8301228A SE8301228L (sv) 1982-03-09 1983-03-07 Halvledarminne med frisvevande styre

Country Status (5)

Country Link
DE (1) DE3308091A1 (sv)
FR (1) FR2523354A1 (sv)
GB (1) GB2120454B (sv)
IT (1) IT1171657B (sv)
SE (1) SE8301228L (sv)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0183235B1 (en) * 1984-11-26 1993-10-06 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
FR2603128B1 (fr) * 1986-08-21 1988-11-10 Commissariat Energie Atomique Cellule de memoire eprom et son procede de fabrication

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1517925A (en) * 1974-09-20 1978-07-19 Siemens Ag Storage field effect transistors
JPS5213782A (en) * 1975-07-23 1977-02-02 Hitachi Ltd Semiconductor non-vol atile memory unit
US4314265A (en) * 1979-01-24 1982-02-02 Xicor, Inc. Dense nonvolatile electrically-alterable memory devices with four layer electrodes
DE2916884C3 (de) * 1979-04-26 1981-12-10 Deutsche Itt Industries Gmbh, 7800 Freiburg Programmierbare Halbleiterspeicherzelle

Also Published As

Publication number Publication date
SE8301228D0 (sv) 1983-03-07
GB2120454A (en) 1983-11-30
GB2120454B (en) 1985-08-29
IT1171657B (it) 1987-06-10
GB8306289D0 (en) 1983-04-13
IT8319954A1 (it) 1984-09-08
DE3308091A1 (de) 1983-09-29
IT8319954A0 (it) 1983-03-08
FR2523354A1 (fr) 1983-09-16

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