FR2377705A1 - Dispositif semi-conducteur, et procede pour sa fabrication - Google Patents
Dispositif semi-conducteur, et procede pour sa fabricationInfo
- Publication number
- FR2377705A1 FR2377705A1 FR7801216A FR7801216A FR2377705A1 FR 2377705 A1 FR2377705 A1 FR 2377705A1 FR 7801216 A FR7801216 A FR 7801216A FR 7801216 A FR7801216 A FR 7801216A FR 2377705 A1 FR2377705 A1 FR 2377705A1
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- manufacturing
- circuits
- refractory
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004020 conductor Substances 0.000 abstract 3
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 239000011819 refractory material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5221—Crossover interconnections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
- H03K19/091—Integrated injection logic or merged transistor logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computing Systems (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Manufacturing & Machinery (AREA)
- General Engineering & Computer Science (AREA)
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
Dispositif semi-conducteur dans lequel une liaison croissante est réalisé du fait que certaines parties d'une couche en matériau conducteur réfractaire déjà utilisée dans des buts de masquage sont utilisées comme une partie d'un conducteur de courant qui, par une couche isolante, est séparé d'un conducteur croisant. Le masque en matériau réfractaire peut définir également les régions dans lesquelles sont réalisés des transistors commutateurs. L'invention offre de grands avantages, entre autres en ce qui concerne la compacité et les liaisons en croix, et cela surtout dans les circuits 1**2L. Application aux circuits intégrés à logique d'injection.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7700420A NL7700420A (nl) | 1977-01-17 | 1977-01-17 | Halfgeleiderinrichting en werkwijze ter ver- vaardiging daarvan. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2377705A1 true FR2377705A1 (fr) | 1978-08-11 |
FR2377705B1 FR2377705B1 (fr) | 1983-04-29 |
Family
ID=19827780
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7801216A Granted FR2377705A1 (fr) | 1977-01-17 | 1978-01-17 | Dispositif semi-conducteur, et procede pour sa fabrication |
Country Status (6)
Country | Link |
---|---|
US (1) | US4183037A (fr) |
JP (1) | JPS5390779A (fr) |
CA (1) | CA1094692A (fr) |
DE (1) | DE2800363C2 (fr) |
FR (1) | FR2377705A1 (fr) |
NL (1) | NL7700420A (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2454701A1 (fr) * | 1979-04-17 | 1980-11-14 | Tokyo Shibaura Electric Co | Circuit integre bipolaire et son procede de fabrication |
EP0103362A2 (fr) * | 1982-06-30 | 1984-03-21 | Fujitsu Limited | Dispositif semi-conducteur comprenant des lignes de puissance |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2816949C3 (de) * | 1978-04-19 | 1981-07-16 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithisch integrierte Halbleiteranordnung und deren Verwendung zum Aufbau einer Speicheranordnung |
US4244001A (en) * | 1979-09-28 | 1981-01-06 | Rca Corporation | Fabrication of an integrated injection logic device with narrow basewidth |
JPS56115560A (en) * | 1980-02-18 | 1981-09-10 | Toshiba Corp | Manufacture of semiconductor device |
JPS5852870A (ja) * | 1981-09-25 | 1983-03-29 | Hitachi Ltd | 半導体集積回路装置 |
JPS58127363A (ja) * | 1982-01-25 | 1983-07-29 | Hitachi Ltd | 半導体集積回路装置 |
DE102004015654A1 (de) * | 2003-04-02 | 2004-10-21 | Luk Lamellen Und Kupplungsbau Beteiligungs Kg | Endstufe zum Ansteuern einer elektrischen Maschine |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL6606912A (fr) * | 1966-05-19 | 1967-11-20 | ||
NL7107040A (fr) * | 1971-05-22 | 1972-11-24 | ||
GB1447675A (en) * | 1973-11-23 | 1976-08-25 | Mullard Ltd | Semiconductor devices |
IT1061530B (it) * | 1975-06-12 | 1983-04-30 | Ncr Co | Metodo per la formazione di connessioni elettriche in regioni selezionate di una superficie di un dispositivo semiconduttore a circuito integrato |
US4109275A (en) * | 1976-12-22 | 1978-08-22 | International Business Machines Corporation | Interconnection of integrated circuit metallization |
-
1977
- 1977-01-17 NL NL7700420A patent/NL7700420A/xx not_active Application Discontinuation
- 1977-11-02 US US05/847,723 patent/US4183037A/en not_active Expired - Lifetime
-
1978
- 1978-01-05 DE DE2800363A patent/DE2800363C2/de not_active Expired
- 1978-01-12 CA CA294,799A patent/CA1094692A/fr not_active Expired
- 1978-01-14 JP JP324278A patent/JPS5390779A/ja active Pending
- 1978-01-17 FR FR7801216A patent/FR2377705A1/fr active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2454701A1 (fr) * | 1979-04-17 | 1980-11-14 | Tokyo Shibaura Electric Co | Circuit integre bipolaire et son procede de fabrication |
EP0103362A2 (fr) * | 1982-06-30 | 1984-03-21 | Fujitsu Limited | Dispositif semi-conducteur comprenant des lignes de puissance |
EP0103362A3 (en) * | 1982-06-30 | 1985-07-03 | Fujitsu Limited | Semiconductor device with power lines |
Also Published As
Publication number | Publication date |
---|---|
JPS5390779A (en) | 1978-08-09 |
CA1094692A (fr) | 1981-01-27 |
FR2377705B1 (fr) | 1983-04-29 |
DE2800363C2 (de) | 1985-02-21 |
US4183037A (en) | 1980-01-08 |
DE2800363A1 (de) | 1978-07-20 |
NL7700420A (nl) | 1978-07-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |