IT1195541B - Metodo di fabbricazione di elementi raddrizzatori - Google Patents

Metodo di fabbricazione di elementi raddrizzatori

Info

Publication number
IT1195541B
IT1195541B IT4160483A IT4160483A IT1195541B IT 1195541 B IT1195541 B IT 1195541B IT 4160483 A IT4160483 A IT 4160483A IT 4160483 A IT4160483 A IT 4160483A IT 1195541 B IT1195541 B IT 1195541B
Authority
IT
Italy
Prior art keywords
manufacture
semiconductor structure
rectifier elements
carried out
welding
Prior art date
Application number
IT4160483A
Other languages
English (en)
Other versions
IT8341604A0 (it
IT8341604A1 (it
Inventor
Erik Robertovich Galinsky
Vladimir Viktorovich Zumberov
Eduard Germanovich Karpov
Oleg Mikhailovich Korolkov
Viktor Leonidovich Kuzmin
Gennady Nikolaevich Surzhenkov
Gunnar Kaarlovich Toomsoo
Efim Davidovich Khutoryansky
Original Assignee
Ni I Pt Inst Sist Planirovan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ni I Pt Inst Sist Planirovan filed Critical Ni I Pt Inst Sist Planirovan
Publication of IT8341604A0 publication Critical patent/IT8341604A0/it
Publication of IT8341604A1 publication Critical patent/IT8341604A1/it
Application granted granted Critical
Publication of IT1195541B publication Critical patent/IT1195541B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H01L23/4924—Bases or plates or solder therefor characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04026—Bonding areas specifically adapted for layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Rectifiers (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Thyristors (AREA)
IT4160483A 1983-02-03 1983-09-12 Metodo di fabbricazione di elementi raddrizzatori IT1195541B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU833540851A SU1114253A1 (ru) 1983-02-03 1983-02-03 Способ изготовлени выпр мительных элементов

Publications (3)

Publication Number Publication Date
IT8341604A0 IT8341604A0 (it) 1983-09-12
IT8341604A1 IT8341604A1 (it) 1985-03-12
IT1195541B true IT1195541B (it) 1988-10-19

Family

ID=21045701

Family Applications (1)

Application Number Title Priority Date Filing Date
IT4160483A IT1195541B (it) 1983-02-03 1983-09-12 Metodo di fabbricazione di elementi raddrizzatori

Country Status (6)

Country Link
JP (1) JPS59144176A (it)
DE (1) DE3325355A1 (it)
FR (1) FR2540673B1 (it)
IT (1) IT1195541B (it)
SE (1) SE8303838L (it)
SU (1) SU1114253A1 (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3446780A1 (de) * 1984-12-21 1986-07-03 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren und verbindungswerkstoff zum metallischen verbinden von bauteilen
DE58908749D1 (de) * 1988-03-03 1995-01-26 Siemens Ag Verfahren zum Befestigen von elektronischen Bauelementen auf Substraten und Anordnung zur Durchführung desselben.
EP0330896A3 (de) * 1988-03-03 1991-01-09 Siemens Aktiengesellschaft Verfahren zum Befestigen von Halbleiterbauelementen auf Substraten und Anordnungen zur Durchführung desselben

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US326598A (en) * 1885-09-22 Hot-air furnace
NL275554A (it) * 1961-04-19 1900-01-01
FR1419202A (fr) * 1963-12-31 1965-11-26 Ibm Contacts ohmiques pour éléments semi-conducteurs
FR2046593A5 (it) * 1970-04-30 1971-03-05 Silec Semi Conducteurs
US3717797A (en) * 1971-03-19 1973-02-20 Westinghouse Electric Corp One piece aluminum electrical contact member for semiconductor devices
GB1389542A (en) * 1971-06-17 1975-04-03 Mullard Ltd Methods of securing a semiconductor body to a support
JPS5950116B2 (ja) * 1976-12-24 1984-12-06 日本インタ−ナショナル整流器株式会社 拡散．合金型半導体装置
FR2412168A1 (fr) * 1977-12-15 1979-07-13 Silicium Semiconducteur Ssc Diodes ecreteuses de surtension
US4315591A (en) * 1979-03-08 1982-02-16 General Electric Company Method for thermo-compression diffusion bonding a structured copper strain buffer to each side of a substrateless semiconductor device wafer
JPS55128836A (en) * 1979-03-29 1980-10-06 Toshiba Corp Method of mounting semiconductor pellet
JPS5691990A (en) * 1979-12-26 1981-07-25 Hitachi Ltd Diffusion joining device
GB2067117B (en) * 1980-01-02 1983-07-06 Secr Defence Bonding semi-conductor bodies to aluminium thick-film circuits
DD220536A1 (de) * 1984-01-10 1985-04-03 Ilmenau Tech Hochschule Verfahren zum verbinden von silizium und germanium

Also Published As

Publication number Publication date
IT8341604A0 (it) 1983-09-12
IT8341604A1 (it) 1985-03-12
SE8303838D0 (sv) 1983-07-05
FR2540673B1 (fr) 1988-07-29
JPS59144176A (ja) 1984-08-18
SU1114253A1 (ru) 1987-03-23
DE3325355A1 (de) 1984-08-09
SE8303838L (sv) 1984-08-04
FR2540673A1 (fr) 1984-08-10

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