IT8341604A1 - Metodo di fabbricazione di elementi raddrizzatori - Google Patents

Metodo di fabbricazione di elementi raddrizzatori

Info

Publication number
IT8341604A1
IT8341604A1 IT1983A41604A IT4160483A IT8341604A1 IT 8341604 A1 IT8341604 A1 IT 8341604A1 IT 1983A41604 A IT1983A41604 A IT 1983A41604A IT 4160483 A IT4160483 A IT 4160483A IT 8341604 A1 IT8341604 A1 IT 8341604A1
Authority
IT
Italy
Prior art keywords
rectifier elements
manufacturing
manufacturing rectifier
elements
rectifier
Prior art date
Application number
IT1983A41604A
Other languages
English (en)
Other versions
IT1195541B (it
IT8341604A0 (it
Original Assignee
Nauchno Issledovatelsky I Proekino Tekhnolcgichesky Inst Sistem Planirovania I Upravlenia V Elektrop
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nauchno Issledovatelsky I Proekino Tekhnolcgichesky Inst Sistem Planirovania I Upravlenia V Elektrop filed Critical Nauchno Issledovatelsky I Proekino Tekhnolcgichesky Inst Sistem Planirovania I Upravlenia V Elektrop
Publication of IT8341604A0 publication Critical patent/IT8341604A0/it
Publication of IT8341604A1 publication Critical patent/IT8341604A1/it
Application granted granted Critical
Publication of IT1195541B publication Critical patent/IT1195541B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492Bases or plates or solder therefor
    • H01L23/4924Bases or plates or solder therefor characterised by the materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04026Bonding areas specifically adapted for layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/83801Soldering or alloying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01015Phosphorus [P]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01023Vanadium [V]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01042Molybdenum [Mo]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01057Lanthanum [La]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01058Cerium [Ce]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01074Tungsten [W]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01327Intermediate phases, i.e. intermetallics compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301Thyristor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Rectifiers (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Thyristors (AREA)
IT4160483A 1983-02-03 1983-09-12 Metodo di fabbricazione di elementi raddrizzatori IT1195541B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU833540851A SU1114253A1 (ru) 1983-02-03 1983-02-03 Способ изготовлени выпр мительных элементов

Publications (3)

Publication Number Publication Date
IT8341604A0 IT8341604A0 (it) 1983-09-12
IT8341604A1 true IT8341604A1 (it) 1985-03-12
IT1195541B IT1195541B (it) 1988-10-19

Family

ID=21045701

Family Applications (1)

Application Number Title Priority Date Filing Date
IT4160483A IT1195541B (it) 1983-02-03 1983-09-12 Metodo di fabbricazione di elementi raddrizzatori

Country Status (6)

Country Link
JP (1) JPS59144176A (it)
DE (1) DE3325355A1 (it)
FR (1) FR2540673B1 (it)
IT (1) IT1195541B (it)
SE (1) SE8303838L (it)
SU (1) SU1114253A1 (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3446780A1 (de) * 1984-12-21 1986-07-03 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren und verbindungswerkstoff zum metallischen verbinden von bauteilen
EP0330896A3 (de) * 1988-03-03 1991-01-09 Siemens Aktiengesellschaft Verfahren zum Befestigen von Halbleiterbauelementen auf Substraten und Anordnungen zur Durchführung desselben
DE58908749D1 (de) * 1988-03-03 1995-01-26 Siemens Ag Verfahren zum Befestigen von elektronischen Bauelementen auf Substraten und Anordnung zur Durchführung desselben.

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US326598A (en) * 1885-09-22 Hot-air furnace
NL275554A (it) * 1961-04-19 1900-01-01
FR1419202A (fr) * 1963-12-31 1965-11-26 Ibm Contacts ohmiques pour éléments semi-conducteurs
FR2046592A5 (it) * 1970-04-30 1971-03-05 Silec Semi Conducteurs
US3717797A (en) * 1971-03-19 1973-02-20 Westinghouse Electric Corp One piece aluminum electrical contact member for semiconductor devices
GB1389542A (en) * 1971-06-17 1975-04-03 Mullard Ltd Methods of securing a semiconductor body to a support
JPS5950116B2 (ja) * 1976-12-24 1984-12-06 日本インタ−ナショナル整流器株式会社 拡散.合金型半導体装置
FR2412168A1 (fr) * 1977-12-15 1979-07-13 Silicium Semiconducteur Ssc Diodes ecreteuses de surtension
US4315591A (en) * 1979-03-08 1982-02-16 General Electric Company Method for thermo-compression diffusion bonding a structured copper strain buffer to each side of a substrateless semiconductor device wafer
JPS55128836A (en) * 1979-03-29 1980-10-06 Toshiba Corp Method of mounting semiconductor pellet
JPS5691990A (en) * 1979-12-26 1981-07-25 Hitachi Ltd Diffusion joining device
GB2067117B (en) * 1980-01-02 1983-07-06 Secr Defence Bonding semi-conductor bodies to aluminium thick-film circuits
DD220536A1 (de) * 1984-01-10 1985-04-03 Ilmenau Tech Hochschule Verfahren zum verbinden von silizium und germanium

Also Published As

Publication number Publication date
FR2540673B1 (fr) 1988-07-29
IT1195541B (it) 1988-10-19
JPS59144176A (ja) 1984-08-18
SE8303838L (sv) 1984-08-04
SU1114253A1 (ru) 1987-03-23
FR2540673A1 (fr) 1984-08-10
SE8303838D0 (sv) 1983-07-05
DE3325355A1 (de) 1984-08-09
IT8341604A0 (it) 1983-09-12

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