DE3325355A1 - Verfahren zur herstellung eines gleichrichterelements - Google Patents
Verfahren zur herstellung eines gleichrichterelementsInfo
- Publication number
- DE3325355A1 DE3325355A1 DE19833325355 DE3325355A DE3325355A1 DE 3325355 A1 DE3325355 A1 DE 3325355A1 DE 19833325355 DE19833325355 DE 19833325355 DE 3325355 A DE3325355 A DE 3325355A DE 3325355 A1 DE3325355 A1 DE 3325355A1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor structure
- temperature
- diffusion welding
- metal foil
- rectifier element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
- H01L23/4924—Bases or plates or solder therefor characterised by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04026—Bonding areas specifically adapted for layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01058—Cerium [Ce]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Die Bonding (AREA)
- Rectifiers (AREA)
- Thyristors (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU833540851A SU1114253A1 (ru) | 1983-02-03 | 1983-02-03 | Способ изготовлени выпр мительных элементов |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3325355A1 true DE3325355A1 (de) | 1984-08-09 |
Family
ID=21045701
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19833325355 Ceased DE3325355A1 (de) | 1983-02-03 | 1983-07-14 | Verfahren zur herstellung eines gleichrichterelements |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS59144176A (it) |
DE (1) | DE3325355A1 (it) |
FR (1) | FR2540673B1 (it) |
IT (1) | IT1195541B (it) |
SE (1) | SE8303838L (it) |
SU (1) | SU1114253A1 (it) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3446780A1 (de) * | 1984-12-21 | 1986-07-03 | Brown, Boveri & Cie Ag, 6800 Mannheim | Verfahren und verbindungswerkstoff zum metallischen verbinden von bauteilen |
US4903886A (en) * | 1988-03-03 | 1990-02-27 | Siemens Aktiengesellschaft | Method and apparatus for fastening semiconductor components to substrates |
US5058796A (en) * | 1988-03-03 | 1991-10-22 | Siemens Aktiengesellschaft | Apparatus for fastening electronic components to substrates |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3717797A (en) * | 1971-03-19 | 1973-02-20 | Westinghouse Electric Corp | One piece aluminum electrical contact member for semiconductor devices |
DE3434105A1 (de) * | 1984-01-10 | 1985-07-18 | Veb Kombinat Nagema, Ddr 8045 Dresden | Verfahren zum verbinden von silizium und germanium |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US326598A (en) * | 1885-09-22 | Hot-air furnace | ||
NL275554A (it) * | 1961-04-19 | 1900-01-01 | ||
FR1419202A (fr) * | 1963-12-31 | 1965-11-26 | Ibm | Contacts ohmiques pour éléments semi-conducteurs |
FR2046592A5 (it) * | 1970-04-30 | 1971-03-05 | Silec Semi Conducteurs | |
GB1389542A (en) * | 1971-06-17 | 1975-04-03 | Mullard Ltd | Methods of securing a semiconductor body to a support |
JPS5950116B2 (ja) * | 1976-12-24 | 1984-12-06 | 日本インタ−ナショナル整流器株式会社 | 拡散.合金型半導体装置 |
FR2412168A1 (fr) * | 1977-12-15 | 1979-07-13 | Silicium Semiconducteur Ssc | Diodes ecreteuses de surtension |
US4315591A (en) * | 1979-03-08 | 1982-02-16 | General Electric Company | Method for thermo-compression diffusion bonding a structured copper strain buffer to each side of a substrateless semiconductor device wafer |
JPS55128836A (en) * | 1979-03-29 | 1980-10-06 | Toshiba Corp | Method of mounting semiconductor pellet |
JPS5691990A (en) * | 1979-12-26 | 1981-07-25 | Hitachi Ltd | Diffusion joining device |
GB2067117B (en) * | 1980-01-02 | 1983-07-06 | Secr Defence | Bonding semi-conductor bodies to aluminium thick-film circuits |
-
1983
- 1983-02-03 SU SU833540851A patent/SU1114253A1/ru active
- 1983-07-05 SE SE8303838A patent/SE8303838L/xx unknown
- 1983-07-14 DE DE19833325355 patent/DE3325355A1/de not_active Ceased
- 1983-07-20 FR FR8312001A patent/FR2540673B1/fr not_active Expired
- 1983-08-25 JP JP58154242A patent/JPS59144176A/ja active Pending
- 1983-09-12 IT IT4160483A patent/IT1195541B/it active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3717797A (en) * | 1971-03-19 | 1973-02-20 | Westinghouse Electric Corp | One piece aluminum electrical contact member for semiconductor devices |
DE3434105A1 (de) * | 1984-01-10 | 1985-07-18 | Veb Kombinat Nagema, Ddr 8045 Dresden | Verfahren zum verbinden von silizium und germanium |
Non-Patent Citations (2)
Title |
---|
Svaro?noe Proizvdstvo, 7(1978), S. 4-5 |
SvaroCnoe Proizvdstvo, 7(1978), S. 4-5 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3446780A1 (de) * | 1984-12-21 | 1986-07-03 | Brown, Boveri & Cie Ag, 6800 Mannheim | Verfahren und verbindungswerkstoff zum metallischen verbinden von bauteilen |
US4903886A (en) * | 1988-03-03 | 1990-02-27 | Siemens Aktiengesellschaft | Method and apparatus for fastening semiconductor components to substrates |
US5058796A (en) * | 1988-03-03 | 1991-10-22 | Siemens Aktiengesellschaft | Apparatus for fastening electronic components to substrates |
US5067647A (en) * | 1988-03-03 | 1991-11-26 | Siemens Aktiengesellschaft | Apparatus for fastening semiconductor components to substrates |
Also Published As
Publication number | Publication date |
---|---|
FR2540673A1 (fr) | 1984-08-10 |
JPS59144176A (ja) | 1984-08-18 |
SU1114253A1 (ru) | 1987-03-23 |
IT1195541B (it) | 1988-10-19 |
SE8303838L (sv) | 1984-08-04 |
IT8341604A0 (it) | 1983-09-12 |
FR2540673B1 (fr) | 1988-07-29 |
SE8303838D0 (sv) | 1983-07-05 |
IT8341604A1 (it) | 1985-03-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8110 | Request for examination paragraph 44 | ||
8131 | Rejection |