FR2363899A1 - Module a semi-conducteurs - Google Patents

Module a semi-conducteurs

Info

Publication number
FR2363899A1
FR2363899A1 FR7726627A FR7726627A FR2363899A1 FR 2363899 A1 FR2363899 A1 FR 2363899A1 FR 7726627 A FR7726627 A FR 7726627A FR 7726627 A FR7726627 A FR 7726627A FR 2363899 A1 FR2363899 A1 FR 2363899A1
Authority
FR
France
Prior art keywords
zone
internal
zones
conduction
neighboring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7726627A
Other languages
English (en)
French (fr)
Other versions
FR2363899B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
Original Assignee
BBC Brown Boveri AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri AG Switzerland filed Critical BBC Brown Boveri AG Switzerland
Publication of FR2363899A1 publication Critical patent/FR2363899A1/fr
Application granted granted Critical
Publication of FR2363899B1 publication Critical patent/FR2363899B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/135—Thyristors having built-in components the built-in components being diodes
    • H10D84/136—Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]

Landscapes

  • Thyristors (AREA)
FR7726627A 1976-09-03 1977-09-01 Module a semi-conducteurs Granted FR2363899A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1118676A CH594989A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1976-09-03 1976-09-03

Publications (2)

Publication Number Publication Date
FR2363899A1 true FR2363899A1 (fr) 1978-03-31
FR2363899B1 FR2363899B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1983-03-25

Family

ID=4370921

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7726627A Granted FR2363899A1 (fr) 1976-09-03 1977-09-01 Module a semi-conducteurs

Country Status (6)

Country Link
US (1) US4150391A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5331980A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CH (1) CH594989A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (2) DE7630940U1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2363899A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1529050A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5936832B2 (ja) * 1978-03-14 1984-09-06 株式会社日立製作所 半導体スイッチング素子
CH633907A5 (de) * 1978-10-10 1982-12-31 Bbc Brown Boveri & Cie Leistungshalbleiterbauelement mit zonen-guard-ringen.
DE2846637A1 (de) * 1978-10-11 1980-04-30 Bbc Brown Boveri & Cie Halbleiterbauelement mit mindestens einem planaren pn-uebergang und zonen- guard-ringen
JPS56104467A (en) * 1980-01-23 1981-08-20 Nippon Telegr & Teleph Corp <Ntt> Reverse conducting thyristor
GB2135515A (en) * 1983-02-18 1984-08-30 Westinghouse Electric Corp Thyristor self-protected by remote punch through
JPS60119776A (ja) * 1983-11-30 1985-06-27 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタ
DE3447220A1 (de) * 1983-12-30 1985-07-11 General Electric Co., Schenectady, N.Y. Thyristor mit abschaltvermoegen mit verbessertem emitter-bereich und verfahren zu seiner herstellung
CH668505A5 (de) * 1985-03-20 1988-12-30 Bbc Brown Boveri & Cie Halbleiterbauelement.
DE3686027D1 (de) * 1985-11-29 1992-08-20 Bbc Brown Boveri & Cie Rueckwaertsleitender thyristor.
DE3542570A1 (de) * 1985-12-02 1987-06-04 Siemens Ag Gate-turnoff-thyristor mit integrierter antiparalleler diode
US5164218A (en) * 1989-05-12 1992-11-17 Nippon Soken, Inc. Semiconductor device and a method for producing the same
JPH05152574A (ja) * 1991-11-29 1993-06-18 Fuji Electric Co Ltd 半導体装置
JP2796057B2 (ja) * 1993-03-25 1998-09-10 三菱電機株式会社 逆導通ゲートターンオフサイリスタ
US5682044A (en) * 1995-01-31 1997-10-28 Takashige Tamamushi Reverse conducting thyristor with a planar-gate, buried-gate, or recessed-gate structure
JP4743447B2 (ja) * 2008-05-23 2011-08-10 三菱電機株式会社 半導体装置
US8461620B2 (en) 2010-05-21 2013-06-11 Applied Pulsed Power, Inc. Laser pumping of thyristors for fast high current rise-times

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1483998A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1965-05-14 1967-09-13
NL6715013A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1967-11-04 1969-05-06
US3911473A (en) * 1968-10-12 1975-10-07 Philips Corp Improved surface breakdown protection for semiconductor devices
US3978514A (en) * 1969-07-18 1976-08-31 Hitachi, Ltd. Diode-integrated high speed thyristor
US3727116A (en) * 1970-05-05 1973-04-10 Rca Corp Integral thyristor-rectifier device
DE2214187C3 (de) * 1972-03-23 1978-05-03 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
JPS5320194B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1972-04-20 1978-06-24
JPS523277B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-05-19 1977-01-27
US4066483A (en) * 1976-07-07 1978-01-03 Western Electric Company, Inc. Gate-controlled bidirectional switching device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/75 *
EXBK/79 *

Also Published As

Publication number Publication date
CH594989A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1978-01-31
DE2644654A1 (de) 1978-03-09
GB1529050A (en) 1978-10-18
DE2644654C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-06-09
US4150391A (en) 1979-04-17
JPS5331980A (en) 1978-03-25
DE7630940U1 (de) 1978-06-15
JPS6135706B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1986-08-14
FR2363899B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1983-03-25

Similar Documents

Publication Publication Date Title
FR2363899A1 (fr) Module a semi-conducteurs
FR2282723A1 (fr) Composant semi-conducteur a jonction recouverte d&#39;une couche de passivation
GB1339250A (en) Gate protective device for insulated gate field-effect transistors
FR2356273A1 (fr) Dispositif de protection d&#39;entree pour semi-conducteurs mos
FR2431770A1 (fr) Photodiode avalanche a semi-conducteurs de structure heterogene
KR900002462A (ko) 반도체 장치
NL7708526A (nl) Geintegreerde halfgeleiderketen met statische inductietransistor.
EP0349022A3 (en) Semiconductor device
KR890005895A (ko) 2중확산형 mosfet
KR920001746A (ko) 쇼트키 접합을 갖춘 반도체 장치
GB1178199A (en) Semiconductor Radiation Detection Apparatus
FR2335957A1 (fr) Dispositif semiconducteur monolithique comprenant un pont de redressement
KR920008969A (ko) 좁은 채널효과를 가지는 의사이상전하결합소자
KR870004502A (ko) 반도체 장치
KR900004040A (ko) 반도체 집적회로 디바이스
JPH03248567A (ja) 入力保護用トランジスタ
KR860001492A (ko) 다이오드 구조체
KR900005561A (ko) 반도체장치
JPS5339084A (en) Silicon gate mis semiconductor device
JPS56133882A (en) Semiconductor optical detector
KR940010302A (ko) 반도체 접속장치
JPS572560A (en) High voltage semiconductor device
KR920010896A (ko) 접지용 확산영역이 다수개 형성된 메모리 소자
KR940010397A (ko) 입력 보호 회로의 구조
JPS57153461A (en) Input protective resistor for semiconductor device

Legal Events

Date Code Title Description
ST Notification of lapse