DE7630940U1 - Halbleiterbauelement - Google Patents
HalbleiterbauelementInfo
- Publication number
- DE7630940U1 DE7630940U1 DE19767630940U DE7630940U DE7630940U1 DE 7630940 U1 DE7630940 U1 DE 7630940U1 DE 19767630940 U DE19767630940 U DE 19767630940U DE 7630940 U DE7630940 U DE 7630940U DE 7630940 U1 DE7630940 U1 DE 7630940U1
- Authority
- DE
- Germany
- Prior art keywords
- zone
- semiconductor component
- ring protection
- zones
- highly doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 37
- 238000009792 diffusion process Methods 0.000 claims description 11
- 238000001465 metallisation Methods 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims 1
- 230000007547 defect Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 241000027294 Fusi Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/113—Isolations within a component, i.e. internal isolations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
- H10D84/135—Thyristors having built-in components the built-in components being diodes
- H10D84/136—Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]
Landscapes
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH1118676A CH594989A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1976-09-03 | 1976-09-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE7630940U1 true DE7630940U1 (de) | 1978-06-15 |
Family
ID=4370921
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19762644654 Granted DE2644654A1 (de) | 1976-09-03 | 1976-10-02 | Halbleiterbauelement |
| DE19767630940U Expired DE7630940U1 (de) | 1976-09-03 | 1976-10-02 | Halbleiterbauelement |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19762644654 Granted DE2644654A1 (de) | 1976-09-03 | 1976-10-02 | Halbleiterbauelement |
Country Status (6)
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5936832B2 (ja) * | 1978-03-14 | 1984-09-06 | 株式会社日立製作所 | 半導体スイッチング素子 |
| CH633907A5 (de) * | 1978-10-10 | 1982-12-31 | Bbc Brown Boveri & Cie | Leistungshalbleiterbauelement mit zonen-guard-ringen. |
| DE2846637A1 (de) * | 1978-10-11 | 1980-04-30 | Bbc Brown Boveri & Cie | Halbleiterbauelement mit mindestens einem planaren pn-uebergang und zonen- guard-ringen |
| JPS56104467A (en) * | 1980-01-23 | 1981-08-20 | Nippon Telegr & Teleph Corp <Ntt> | Reverse conducting thyristor |
| GB2135515A (en) * | 1983-02-18 | 1984-08-30 | Westinghouse Electric Corp | Thyristor self-protected by remote punch through |
| JPS60119776A (ja) * | 1983-11-30 | 1985-06-27 | Mitsubishi Electric Corp | ゲ−トタ−ンオフサイリスタ |
| DE3447220A1 (de) * | 1983-12-30 | 1985-07-11 | General Electric Co., Schenectady, N.Y. | Thyristor mit abschaltvermoegen mit verbessertem emitter-bereich und verfahren zu seiner herstellung |
| CH668505A5 (de) * | 1985-03-20 | 1988-12-30 | Bbc Brown Boveri & Cie | Halbleiterbauelement. |
| EP0224757B1 (de) * | 1985-11-29 | 1992-07-15 | BBC Brown Boveri AG | Rückwärtsleitender Thyristor |
| DE3542570A1 (de) * | 1985-12-02 | 1987-06-04 | Siemens Ag | Gate-turnoff-thyristor mit integrierter antiparalleler diode |
| US5164218A (en) * | 1989-05-12 | 1992-11-17 | Nippon Soken, Inc. | Semiconductor device and a method for producing the same |
| JPH05152574A (ja) * | 1991-11-29 | 1993-06-18 | Fuji Electric Co Ltd | 半導体装置 |
| JP2796057B2 (ja) * | 1993-03-25 | 1998-09-10 | 三菱電機株式会社 | 逆導通ゲートターンオフサイリスタ |
| US5682044A (en) * | 1995-01-31 | 1997-10-28 | Takashige Tamamushi | Reverse conducting thyristor with a planar-gate, buried-gate, or recessed-gate structure |
| JP4743447B2 (ja) | 2008-05-23 | 2011-08-10 | 三菱電機株式会社 | 半導体装置 |
| US8461620B2 (en) | 2010-05-21 | 2013-06-11 | Applied Pulsed Power, Inc. | Laser pumping of thyristors for fast high current rise-times |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1483998A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1965-05-14 | 1967-09-13 | ||
| NL6715013A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1967-11-04 | 1969-05-06 | ||
| US3911473A (en) * | 1968-10-12 | 1975-10-07 | Philips Corp | Improved surface breakdown protection for semiconductor devices |
| US3978514A (en) * | 1969-07-18 | 1976-08-31 | Hitachi, Ltd. | Diode-integrated high speed thyristor |
| US3727116A (en) * | 1970-05-05 | 1973-04-10 | Rca Corp | Integral thyristor-rectifier device |
| DE2214187C3 (de) * | 1972-03-23 | 1978-05-03 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor |
| JPS5320194B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1972-04-20 | 1978-06-24 | ||
| JPS523277B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1973-05-19 | 1977-01-27 | ||
| US4066483A (en) * | 1976-07-07 | 1978-01-03 | Western Electric Company, Inc. | Gate-controlled bidirectional switching device |
-
1976
- 1976-09-03 CH CH1118676A patent/CH594989A5/xx not_active IP Right Cessation
- 1976-10-02 DE DE19762644654 patent/DE2644654A1/de active Granted
- 1976-10-02 DE DE19767630940U patent/DE7630940U1/de not_active Expired
-
1977
- 1977-07-13 JP JP8400577A patent/JPS5331980A/ja active Granted
- 1977-08-22 US US05/826,660 patent/US4150391A/en not_active Expired - Lifetime
- 1977-09-01 FR FR7726627A patent/FR2363899A1/fr active Granted
- 1977-09-01 GB GB36582/77A patent/GB1529050A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2363899B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1983-03-25 |
| JPS6135706B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1986-08-14 |
| US4150391A (en) | 1979-04-17 |
| DE2644654C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1988-06-09 |
| CH594989A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1978-01-31 |
| FR2363899A1 (fr) | 1978-03-31 |
| GB1529050A (en) | 1978-10-18 |
| JPS5331980A (en) | 1978-03-25 |
| DE2644654A1 (de) | 1978-03-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0200863B1 (de) | Halbleiterbauelement mit Thyristor- und Diodenstrukturen | |
| DE3011557C2 (de) | Zweipoliger Überstromschutz | |
| DE69607965T2 (de) | Wandlerschaltung, schaltung mit wenigstens einem schalter und schaltungsmodul | |
| DE7630940U1 (de) | Halbleiterbauelement | |
| DE3230741A1 (de) | Halbleiterschalter mit einem abschaltbaren thyristor | |
| DE3401407C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| DE3521079A1 (de) | Rueckwaerts leitende vollsteuergate-thyristoranordnung | |
| DE1216435B (de) | Schaltbares Halbleiterbauelement mit vier Zonen | |
| EP1097480B1 (de) | Leistungshalbleiterelement mit einem emitterbereich, dem eine stoppzone vorgelagert ist | |
| DE4310606C2 (de) | GTO-Thyristoren | |
| DE1912192A1 (de) | Halbleiterschaltelement mit Gleichrichterdiodenaufbau | |
| EP0430133B1 (de) | Leistungs-Halbleiterbauelement mit Emitterkurzschlüssen | |
| EP0327901A1 (de) | Hochleistungs-GTO-Thyristor sowie Verfahren zu dessen Herstellung | |
| DE2534703C3 (de) | Abschaltbarer Thyristor | |
| DE2915885C2 (de) | Thyristor mit Steuerung durch Feldeffekttransistor | |
| EP0742957B1 (de) | Mos-gesteuerter thyristor | |
| DE1539070A1 (de) | Halbleiteranordnungen mit kleinen Oberflaechenstroemen | |
| DE3942490C2 (de) | Feldeffekt-gesteuertes Halbleiterbauelement | |
| DE2056806A1 (de) | Bistabiles Halbleiterbauelement | |
| DE4240027A1 (de) | MOS-gesteuerte Diode | |
| DE2507104C2 (de) | Thyristor für hohe Frequenzen | |
| DE2210386A1 (de) | Thyristor | |
| DE10048165B4 (de) | Leistungshalbleiterbauelement mit einer beabstandet zu einer Emitterzone angeordneten Stoppzone | |
| DE2912242C2 (de) | Halbleitervorrichtung | |
| DE1614035C3 (de) | Integrierte Halbleiteranordnung |