JPS572560A - High voltage semiconductor device - Google Patents
High voltage semiconductor deviceInfo
- Publication number
- JPS572560A JPS572560A JP7563380A JP7563380A JPS572560A JP S572560 A JPS572560 A JP S572560A JP 7563380 A JP7563380 A JP 7563380A JP 7563380 A JP7563380 A JP 7563380A JP S572560 A JPS572560 A JP S572560A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- groups
- high voltage
- voltage semiconductor
- rectifying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/074—Stacked arrangements of non-apertured devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Die Bonding (AREA)
Abstract
PURPOSE:To obtain a semiconductor device having arbitrary bidirectional avalanche characteristics by so connecting two sets of a plurality of p-n junction semiconductor pellets that the rectifying direction become reverse. CONSTITUTION:Two groups 1a, 1b of silicon pellets 1 having p-n junctions and laminated and bonded simultaneously in the same rectifying direction are prepared, and are bonded in such a manner that the rectifying directions of the groups 1a, 1b are reverse. Thus, arbitrary avalanche characteristic can be obtaind bidirectionally with the number of the groups.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7563380A JPS572560A (en) | 1980-06-06 | 1980-06-06 | High voltage semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7563380A JPS572560A (en) | 1980-06-06 | 1980-06-06 | High voltage semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS572560A true JPS572560A (en) | 1982-01-07 |
Family
ID=13581842
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7563380A Pending JPS572560A (en) | 1980-06-06 | 1980-06-06 | High voltage semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS572560A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6428099A (en) * | 1987-07-23 | 1989-01-30 | Nec Corp | Artificial satellite separation system |
JPH0666409B2 (en) * | 1986-05-02 | 1994-08-24 | アンプ インコーポレーテッド | Surface mountable diode |
JP2017208988A (en) * | 2016-05-20 | 2017-11-24 | 新電元工業株式会社 | Switching power supply device and clamp type semiconductor device |
-
1980
- 1980-06-06 JP JP7563380A patent/JPS572560A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0666409B2 (en) * | 1986-05-02 | 1994-08-24 | アンプ インコーポレーテッド | Surface mountable diode |
JPS6428099A (en) * | 1987-07-23 | 1989-01-30 | Nec Corp | Artificial satellite separation system |
JP2017208988A (en) * | 2016-05-20 | 2017-11-24 | 新電元工業株式会社 | Switching power supply device and clamp type semiconductor device |
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