JPS57183061A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57183061A
JPS57183061A JP6814081A JP6814081A JPS57183061A JP S57183061 A JPS57183061 A JP S57183061A JP 6814081 A JP6814081 A JP 6814081A JP 6814081 A JP6814081 A JP 6814081A JP S57183061 A JPS57183061 A JP S57183061A
Authority
JP
Japan
Prior art keywords
electrode
group
glass
pellets
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6814081A
Other languages
Japanese (ja)
Inventor
Shigeru Kamiya
Toshiyuki Hidaka
Takeshi Ishizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi Power Semiconductor Device Ltd
Original Assignee
Hitachi Ltd
Hitachi Haramachi Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Haramachi Electronics Ltd filed Critical Hitachi Ltd
Priority to JP6814081A priority Critical patent/JPS57183061A/en
Publication of JPS57183061A publication Critical patent/JPS57183061A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/074—Stacked arrangements of non-apertured devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To facilitate the winding and sintering of glass slurry, and to make a semiconductor deivce of higher dielectric strength and smaller size, by dividing a laminate into several groups and placing intermediate electrodes in the laminate divisions, when silicon pellets are laminated in multiple and sealed around them with glass. CONSTITUTION:A plurality of laminated silicon pellets are divided into 12aa- 12an, 12bb-12bn and 12ca-12cn. Next, one electrode 14a is mounted to the first group pellet 12aa through a semiconductor spacer 13aa without P-N junction. An intermeidate electrode 14c is mounted to the pellet 12an through a similar spacer 13ab. Similarly, the second group pellts 12bb-12bn are provided between intermediate electrodes 14c and 14d. The third group pellets 12ca-12cn are provided between an intermediate electrode 14d and the other electrode 14b. Afterwards, leads 16a and 16b are attached to the electrodes 14a and 14b respectively. The whole device is sealed with glass 15.
JP6814081A 1981-05-08 1981-05-08 Semiconductor device Pending JPS57183061A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6814081A JPS57183061A (en) 1981-05-08 1981-05-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6814081A JPS57183061A (en) 1981-05-08 1981-05-08 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57183061A true JPS57183061A (en) 1982-11-11

Family

ID=13365138

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6814081A Pending JPS57183061A (en) 1981-05-08 1981-05-08 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57183061A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105514096A (en) * 2016-02-03 2016-04-20 泰州优宾晶圆科技有限公司 High-voltage silicon pile

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105514096A (en) * 2016-02-03 2016-04-20 泰州优宾晶圆科技有限公司 High-voltage silicon pile

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