JPS5791527A - Glass sealed semiconductor device - Google Patents

Glass sealed semiconductor device

Info

Publication number
JPS5791527A
JPS5791527A JP16772180A JP16772180A JPS5791527A JP S5791527 A JPS5791527 A JP S5791527A JP 16772180 A JP16772180 A JP 16772180A JP 16772180 A JP16772180 A JP 16772180A JP S5791527 A JPS5791527 A JP S5791527A
Authority
JP
Japan
Prior art keywords
electrode member
junction
semiconductor device
shape
deterioration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16772180A
Other languages
Japanese (ja)
Inventor
Hisanori Muramatsu
Shigeru Miyagawa
Tamio Omori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Components Co Ltd
Original Assignee
Toshiba Corp
Toshiba Components Co Ltd
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Components Co Ltd, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16772180A priority Critical patent/JPS5791527A/en
Publication of JPS5791527A publication Critical patent/JPS5791527A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To improve the heat dissipation of a glass sealed semiconductor device and to prevent the deterioration of a P-N junction of the device by forming an electrode member of a metal foil of the same shape as the end face of a semiconductor element. CONSTITUTION:A high withstand voltage diode element 11 is formed of silicon stack laminated with a plurality of P-N junction silicon element 11a-11m, an electrode member 12 of the same metal foil as the shape of both ends of the eleent is connected to a lead 14, and the electrode member 12 and the lead 14 of the diode element 11 are partly airtightly sealed by the glass layer 13. In this manner, since there is no difference in the stepwise shape of the semiconductor element 11 and the electrode member 12, it does not disturb the thermal conduction, thereby improving the heat dissipation, and thereby preventing the deterioration of the P-N junction due to the production of voids.
JP16772180A 1980-11-28 1980-11-28 Glass sealed semiconductor device Pending JPS5791527A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16772180A JPS5791527A (en) 1980-11-28 1980-11-28 Glass sealed semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16772180A JPS5791527A (en) 1980-11-28 1980-11-28 Glass sealed semiconductor device

Publications (1)

Publication Number Publication Date
JPS5791527A true JPS5791527A (en) 1982-06-07

Family

ID=15854944

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16772180A Pending JPS5791527A (en) 1980-11-28 1980-11-28 Glass sealed semiconductor device

Country Status (1)

Country Link
JP (1) JPS5791527A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5760482A (en) * 1995-03-20 1998-06-02 U.S. Philips Corporation Semiconductor device of the type sealed in glass comprising a semiconductor body connected to slugs by means of a silver-aluminum bonding layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5760482A (en) * 1995-03-20 1998-06-02 U.S. Philips Corporation Semiconductor device of the type sealed in glass comprising a semiconductor body connected to slugs by means of a silver-aluminum bonding layer

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