DE3686027D1 - Rueckwaertsleitender thyristor. - Google Patents

Rueckwaertsleitender thyristor.

Info

Publication number
DE3686027D1
DE3686027D1 DE8686115567T DE3686027T DE3686027D1 DE 3686027 D1 DE3686027 D1 DE 3686027D1 DE 8686115567 T DE8686115567 T DE 8686115567T DE 3686027 T DE3686027 T DE 3686027T DE 3686027 D1 DE3686027 D1 DE 3686027D1
Authority
DE
Germany
Prior art keywords
reverse conductive
conductive thyristor
thyristor
reverse
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686115567T
Other languages
English (en)
Inventor
Peter Roggwiller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
Original Assignee
BBC Brown Boveri AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri AG Switzerland filed Critical BBC Brown Boveri AG Switzerland
Application granted granted Critical
Publication of DE3686027D1 publication Critical patent/DE3686027D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
DE8686115567T 1985-11-29 1986-11-10 Rueckwaertsleitender thyristor. Expired - Fee Related DE3686027D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH509585 1985-11-29

Publications (1)

Publication Number Publication Date
DE3686027D1 true DE3686027D1 (de) 1992-08-20

Family

ID=4287848

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686115567T Expired - Fee Related DE3686027D1 (de) 1985-11-29 1986-11-10 Rueckwaertsleitender thyristor.

Country Status (4)

Country Link
US (1) US4943840A (de)
EP (1) EP0224757B1 (de)
JP (1) JPS62128564A (de)
DE (1) DE3686027D1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3869752D1 (de) * 1987-12-23 1992-05-07 Bbc Brown Boveri & Cie Abschaltbarer thyristor mit ueberspannungsschutz.
DE19640656A1 (de) * 1996-10-02 1998-04-09 Asea Brown Boveri Rückwärtsleitender GTO
EP1049175B1 (de) 1998-11-11 2009-09-02 Mitsubishi Denki Kabushiki Kaisha Rückwärtsleitender thyristor, halbleiteranordnung mit mechanischem kontakt und halbleitersubstrat
US9564891B1 (en) 2015-10-28 2017-02-07 Crydom, Inc. Low conducted emission solid state switch
DE102018000571B4 (de) 2018-01-25 2021-08-12 Tdk-Micronas Gmbh Laterales Thyristor-Halbleiterbauelement

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3978514A (en) * 1969-07-18 1976-08-31 Hitachi, Ltd. Diode-integrated high speed thyristor
US4037245A (en) * 1975-11-28 1977-07-19 General Electric Company Electric field controlled diode with a current controlling surface grid
US4357621A (en) * 1976-05-31 1982-11-02 Tokyo Shibaura Electric Co., Ltd. Reverse conducting thyristor with specific resistor structures between main cathode and amplifying, reverse conducting portions
CH594989A5 (de) * 1976-09-03 1978-01-31 Bbc Brown Boveri & Cie
JPS5379471A (en) * 1976-12-24 1978-07-13 Fuji Electric Co Ltd Thyristor
US4120092A (en) * 1977-04-11 1978-10-17 Hanson Goodwin F Plastic injection molded bow compass
JPS542077A (en) * 1977-06-08 1979-01-09 Hitachi Ltd Semiconductor switching element
GB1587540A (en) * 1977-12-20 1981-04-08 Philips Electronic Associated Gate turn-off diodes and arrangements including such diodes
JPS54143078A (en) * 1978-04-28 1979-11-07 Hitachi Ltd Field effect switching element
US4383266A (en) * 1979-09-26 1983-05-10 Kokusai Denshin Denwa Kabushiki Kaisha Avalanche photo diode
JPS6032346B2 (ja) * 1980-01-21 1985-07-27 三洋電機株式会社 電解コンデンサの製造方法
JPS5762561A (en) * 1980-10-03 1982-04-15 Hitachi Ltd Static induction type semiconductor switching element
DE3046134C2 (de) * 1980-12-06 1982-11-04 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Optisch zündbarer Zweirichtungs-Thyristor
JPS5840861A (ja) * 1981-09-04 1983-03-09 Hitachi Ltd 半導体装置
US4377516A (en) * 1981-12-10 1983-03-22 Northwestern University Antigenic linear peptide compounds
US4450419A (en) * 1982-09-29 1984-05-22 Rca Corporation Monolithic reflection phase shifter
DE3331298A1 (de) * 1983-08-31 1985-03-14 Brown, Boveri & Cie Ag, 6800 Mannheim Leistungsthyristor auf einem substrat
JPS6074677A (ja) * 1983-09-30 1985-04-26 Toshiba Corp 複合型サイリスタ
DE3402132C1 (de) * 1984-01-23 1985-01-31 Schott Glaswerke, 6500 Mainz Verfahren zur Erhoehung des Kontrastes bei der Aufnahme eines transparenten Gegenstandes mittels einer Fernsehkamera
JPS60189262A (ja) * 1984-03-09 1985-09-26 Toshiba Corp 逆導通ゲ−トタ−ンオフサイリスタ
JPS6148472U (de) * 1984-09-04 1986-04-01
JPS6185077A (ja) * 1984-09-29 1986-04-30 Kakushin Kogyo Kk 原動力装置の遮へい板
US4742377A (en) * 1985-02-21 1988-05-03 General Instrument Corporation Schottky barrier device with doped composite guard ring
JPS61208873A (ja) * 1985-03-13 1986-09-17 Res Dev Corp Of Japan 圧接構造型両面ゲ−ト静電誘導サイリスタ
DE3612367A1 (de) * 1986-04-12 1987-10-15 Licentia Gmbh Abschaltbarer thyristor
JPS63198383A (ja) * 1987-02-13 1988-08-17 Fujitsu Ltd 半導体受光装置及びその製造方法

Also Published As

Publication number Publication date
JPS62128564A (ja) 1987-06-10
EP0224757B1 (de) 1992-07-15
EP0224757A1 (de) 1987-06-10
US4943840A (en) 1990-07-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee