JPS5762561A - Static induction type semiconductor switching element - Google Patents

Static induction type semiconductor switching element

Info

Publication number
JPS5762561A
JPS5762561A JP13757880A JP13757880A JPS5762561A JP S5762561 A JPS5762561 A JP S5762561A JP 13757880 A JP13757880 A JP 13757880A JP 13757880 A JP13757880 A JP 13757880A JP S5762561 A JPS5762561 A JP S5762561A
Authority
JP
Japan
Prior art keywords
layer
type
emitter
channel
static induction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13757880A
Other languages
Japanese (ja)
Other versions
JPS631757B2 (en
Inventor
Yoshio Terasawa
Yoshiteru Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13757880A priority Critical patent/JPS5762561A/en
Publication of JPS5762561A publication Critical patent/JPS5762561A/en
Publication of JPS631757B2 publication Critical patent/JPS631757B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To prevent the current concentration of a static induction type thyristor by forming a reverse conductive type high impurity layer on the emitter of the thyristor and constructing to increase the carrier injection efficency from the emitter to the base as it is separated farther from a channel unit. CONSTITUTION:A P<+> type emitter layer 6-1 having the widest width is formed at the periphery farthest from a channel unit, and an emitter shortcircuit unit N<+> type laer 12-1 is formed at the near side to the channel unit adjacent to the layer 6-1. Then, the second P<+> type layer 6-2 having narrower width than the layer 6-1 is formed adjacent to the layer 12-1. similarly, N<+> type layer 12-2, P<+> type layer 6-3,... are formed until reaching the center of the channel. Since the carrier injection efficiency will increase as it is separated farther from the center of the channel in this manner, it can prevent the current local concentration at the turn-OFF time.
JP13757880A 1980-10-03 1980-10-03 Static induction type semiconductor switching element Granted JPS5762561A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13757880A JPS5762561A (en) 1980-10-03 1980-10-03 Static induction type semiconductor switching element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13757880A JPS5762561A (en) 1980-10-03 1980-10-03 Static induction type semiconductor switching element

Publications (2)

Publication Number Publication Date
JPS5762561A true JPS5762561A (en) 1982-04-15
JPS631757B2 JPS631757B2 (en) 1988-01-13

Family

ID=15201990

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13757880A Granted JPS5762561A (en) 1980-10-03 1980-10-03 Static induction type semiconductor switching element

Country Status (1)

Country Link
JP (1) JPS5762561A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0261631A2 (en) * 1986-09-26 1988-03-30 Zaidan Hojin Handotai Kenkyu Shinkokai Integrated light-triggered and light-quenched static induction thyristor and making method thereof
JPS63257274A (en) * 1987-04-14 1988-10-25 Toyota Central Res & Dev Lab Inc Electrostatic induction semiconductor device
US4943840A (en) * 1985-11-29 1990-07-24 Bbc Brown, Boveri & Company, Limited Reverse-conducting thyristor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0234468U (en) * 1988-08-29 1990-03-05

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4943840A (en) * 1985-11-29 1990-07-24 Bbc Brown, Boveri & Company, Limited Reverse-conducting thyristor
EP0261631A2 (en) * 1986-09-26 1988-03-30 Zaidan Hojin Handotai Kenkyu Shinkokai Integrated light-triggered and light-quenched static induction thyristor and making method thereof
US4914043A (en) * 1986-09-26 1990-04-03 Zaidan Hojin Handotai Kenkyu Shinkokai Method of making an integrated light-triggered and light-quenched static induction thyristor
JPS63257274A (en) * 1987-04-14 1988-10-25 Toyota Central Res & Dev Lab Inc Electrostatic induction semiconductor device

Also Published As

Publication number Publication date
JPS631757B2 (en) 1988-01-13

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