DE3650170D1 - Halbleiteranordnung mit Verbindungselektroden. - Google Patents

Halbleiteranordnung mit Verbindungselektroden.

Info

Publication number
DE3650170D1
DE3650170D1 DE3650170T DE3650170T DE3650170D1 DE 3650170 D1 DE3650170 D1 DE 3650170D1 DE 3650170 T DE3650170 T DE 3650170T DE 3650170 T DE3650170 T DE 3650170T DE 3650170 D1 DE3650170 D1 DE 3650170D1
Authority
DE
Germany
Prior art keywords
connecting electrodes
semiconductor arrangement
semiconductor
arrangement
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3650170T
Other languages
English (en)
Other versions
DE3650170T2 (de
Inventor
Takeo C O Patent Divisio Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP60100915A external-priority patent/JPS61258452A/ja
Priority claimed from JP19650385A external-priority patent/JPS6255929A/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3650170D1 publication Critical patent/DE3650170D1/de
Publication of DE3650170T2 publication Critical patent/DE3650170T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE19863650170 1985-05-13 1986-05-07 Halbleiteranordnung mit Verbindungselektroden. Expired - Lifetime DE3650170T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60100915A JPS61258452A (ja) 1985-05-13 1985-05-13 半導体装置
JP19650385A JPS6255929A (ja) 1985-09-05 1985-09-05 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
DE3650170D1 true DE3650170D1 (de) 1995-01-26
DE3650170T2 DE3650170T2 (de) 1995-05-18

Family

ID=26441855

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19863650170 Expired - Lifetime DE3650170T2 (de) 1985-05-13 1986-05-07 Halbleiteranordnung mit Verbindungselektroden.

Country Status (2)

Country Link
EP (2) EP0209654B1 (de)
DE (1) DE3650170T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8800359A (nl) * 1988-02-15 1989-09-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
KR920005242A (ko) * 1990-08-20 1992-03-28 김광호 게이트-절연체-반도체의 구조를 가지는 트랜지스터의 제조방법
DE69226987T2 (de) * 1991-05-03 1999-02-18 Sgs Thomson Microelectronics Lokalverbindungen für integrierte Schaltungen
EP0514103A1 (de) * 1991-05-14 1992-11-19 STMicroelectronics, Inc. Herstellungsverfahren von einer Metallbarriere für submikron Kontakte
JPH0730095A (ja) * 1993-06-25 1995-01-31 Mitsubishi Electric Corp 半導体装置及びその製造方法
KR0148325B1 (ko) * 1995-03-04 1998-12-01 김주용 반도체 소자의 금속 배선 형성방법
EP0732731A3 (de) * 1995-03-13 1997-10-08 Applied Materials Inc Behandlung einer Titannitrid-Schicht zur Verbesserung der Beständigkeit gegen höhere Temperaturen
US11208263B2 (en) 2017-03-07 2021-12-28 Karl Angleitner Storage rack for stored goods and storage and retrieval device for the storage and retrieval of the stored goods

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3217026A1 (de) * 1981-05-06 1982-12-30 Mitsubishi Denki K.K., Tokyo Halbleitervorrichtung
JPS58101454A (ja) * 1981-12-12 1983-06-16 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の電極
JPS59231836A (ja) * 1983-06-14 1984-12-26 Toshiba Corp 多層構造アルミニウム層の形成方法

Also Published As

Publication number Publication date
EP0613180A3 (de) 1994-10-19
EP0209654A2 (de) 1987-01-28
DE3650170T2 (de) 1995-05-18
EP0613180A2 (de) 1994-08-31
EP0209654B1 (de) 1994-12-14
EP0209654A3 (en) 1988-10-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)