FR2356276A1 - Dispositif semi-conducteur a tension de rupture elevee - Google Patents
Dispositif semi-conducteur a tension de rupture eleveeInfo
- Publication number
- FR2356276A1 FR2356276A1 FR7718467A FR7718467A FR2356276A1 FR 2356276 A1 FR2356276 A1 FR 2356276A1 FR 7718467 A FR7718467 A FR 7718467A FR 7718467 A FR7718467 A FR 7718467A FR 2356276 A1 FR2356276 A1 FR 2356276A1
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- thickness
- voltage semiconductor
- semiconductor
- high rupture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
Landscapes
- Thyristors (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US69801476A | 1976-06-21 | 1976-06-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2356276A1 true FR2356276A1 (fr) | 1978-01-20 |
| FR2356276B1 FR2356276B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1983-02-04 |
Family
ID=24803556
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7718467A Granted FR2356276A1 (fr) | 1976-06-21 | 1977-06-16 | Dispositif semi-conducteur a tension de rupture elevee |
Country Status (5)
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2449971A1 (fr) * | 1979-02-22 | 1980-09-19 | Rca Corp | Procede d'attaque en une fois pour former une structure mesa ayant une paroi a plusieurs etages |
| EP0144876A3 (en) * | 1983-12-07 | 1985-07-03 | Bbc Aktiengesellschaft Brown, Boveri & Cie. | Semiconductor device |
| EP0164645A3 (de) * | 1984-06-14 | 1987-09-30 | Asea Brown Boveri Aktiengesellschaft | Silizium-Halbleiterbauelement mit ätztechnisch hergestellter Randkontur und Verfahren zur Herstellung dieses Bauelementes |
| EP0389863A1 (de) * | 1989-03-29 | 1990-10-03 | Siemens Aktiengesellschaft | Verfahren zur Herstellung eines planaren pn-Übergangs hoher Spannungsfestigkeit |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6190463A (ja) * | 1984-10-11 | 1986-05-08 | Hitachi Ltd | 半導体装置 |
| DE10349908C5 (de) * | 2003-10-25 | 2009-02-12 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Herstellung eines zweifach passivierten Leistungshalbleiterbauelements mit einer MESA Randstruktur |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1052661A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1963-01-30 | 1900-01-01 | ||
| DE1539961A1 (de) * | 1965-03-17 | 1970-01-22 | Fuji Electric Co Ltd | Halbleiterbauelement mit mindestens zwei pn-UEbergaengen im einkristallinen Halbleiterkoerper |
| DE1276207B (de) * | 1966-09-09 | 1968-08-29 | Licentia Gmbh | Halbleiterbauelement |
-
1977
- 1977-06-10 NL NLAANVRAGE7706389,A patent/NL180265C/xx not_active IP Right Cessation
- 1977-06-16 FR FR7718467A patent/FR2356276A1/fr active Granted
- 1977-06-18 DE DE2727487A patent/DE2727487C2/de not_active Expired
- 1977-06-21 JP JP7290177A patent/JPS538069A/ja active Granted
- 1977-06-21 SE SE7707190A patent/SE7707190L/xx unknown
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2449971A1 (fr) * | 1979-02-22 | 1980-09-19 | Rca Corp | Procede d'attaque en une fois pour former une structure mesa ayant une paroi a plusieurs etages |
| EP0144876A3 (en) * | 1983-12-07 | 1985-07-03 | Bbc Aktiengesellschaft Brown, Boveri & Cie. | Semiconductor device |
| EP0164645A3 (de) * | 1984-06-14 | 1987-09-30 | Asea Brown Boveri Aktiengesellschaft | Silizium-Halbleiterbauelement mit ätztechnisch hergestellter Randkontur und Verfahren zur Herstellung dieses Bauelementes |
| EP0389863A1 (de) * | 1989-03-29 | 1990-10-03 | Siemens Aktiengesellschaft | Verfahren zur Herstellung eines planaren pn-Übergangs hoher Spannungsfestigkeit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS538069A (en) | 1978-01-25 |
| NL180265B (nl) | 1986-08-18 |
| NL7706389A (nl) | 1977-12-23 |
| DE2727487A1 (de) | 1977-12-29 |
| NL180265C (nl) | 1987-01-16 |
| JPS5639057B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1981-09-10 |
| FR2356276B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1983-02-04 |
| DE2727487C2 (de) | 1985-05-15 |
| SE7707190L (sv) | 1977-12-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |