DE2727487C2 - Halbleiterbauelement mit hoher Durchbruchsspannung - Google Patents
Halbleiterbauelement mit hoher DurchbruchsspannungInfo
- Publication number
- DE2727487C2 DE2727487C2 DE2727487A DE2727487A DE2727487C2 DE 2727487 C2 DE2727487 C2 DE 2727487C2 DE 2727487 A DE2727487 A DE 2727487A DE 2727487 A DE2727487 A DE 2727487A DE 2727487 C2 DE2727487 C2 DE 2727487C2
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- zone
- component
- layer
- breakdown voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 91
- 230000015556 catabolic process Effects 0.000 title claims description 51
- 230000002829 reductive effect Effects 0.000 claims description 14
- 238000005530 etching Methods 0.000 description 37
- 230000007704 transition Effects 0.000 description 33
- 239000000758 substrate Substances 0.000 description 21
- 230000005684 electric field Effects 0.000 description 15
- 238000000034 method Methods 0.000 description 15
- 239000012535 impurity Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 238000000227 grinding Methods 0.000 description 6
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 2
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 1
- 241000010972 Ballerus ballerus Species 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 235000013312 flour Nutrition 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
Landscapes
- Thyristors (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US69801476A | 1976-06-21 | 1976-06-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2727487A1 DE2727487A1 (de) | 1977-12-29 |
| DE2727487C2 true DE2727487C2 (de) | 1985-05-15 |
Family
ID=24803556
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2727487A Expired DE2727487C2 (de) | 1976-06-21 | 1977-06-18 | Halbleiterbauelement mit hoher Durchbruchsspannung |
Country Status (5)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10349908A1 (de) * | 2003-10-25 | 2005-06-02 | Semikron Elektronik Gmbh | Zweifach passiviertes Leistungshalbleiterbauelement mit einer MESA Randstruktur und Verfahren zu dessen Herstellung |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1212404B (it) * | 1979-02-22 | 1989-11-22 | Rca Corp | Metodo comportante un singolo attacco per la formazione di un mesa presentante una parete a piu'gradini. |
| DE3469830D1 (en) * | 1983-12-07 | 1988-04-14 | Bbc Brown Boveri & Cie | Semiconductor device |
| DE3422051C2 (de) * | 1984-06-14 | 1986-06-26 | Brown, Boveri & Cie Ag, 6800 Mannheim | Silizium-Halbleiterbauelement mit ätztechnisch hergestellter Randkontur und Verfahren zur Herstellung dieses Bauelements |
| JPS6190463A (ja) * | 1984-10-11 | 1986-05-08 | Hitachi Ltd | 半導体装置 |
| EP0389863B1 (de) * | 1989-03-29 | 1996-12-18 | Siemens Aktiengesellschaft | Verfahren zur Herstellung eines planaren pn-Übergangs hoher Spannungsfestigkeit |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1052661A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1963-01-30 | 1900-01-01 | ||
| DE1539961A1 (de) * | 1965-03-17 | 1970-01-22 | Fuji Electric Co Ltd | Halbleiterbauelement mit mindestens zwei pn-UEbergaengen im einkristallinen Halbleiterkoerper |
| DE1276207B (de) * | 1966-09-09 | 1968-08-29 | Licentia Gmbh | Halbleiterbauelement |
-
1977
- 1977-06-10 NL NLAANVRAGE7706389,A patent/NL180265C/xx not_active IP Right Cessation
- 1977-06-16 FR FR7718467A patent/FR2356276A1/fr active Granted
- 1977-06-18 DE DE2727487A patent/DE2727487C2/de not_active Expired
- 1977-06-21 SE SE7707190A patent/SE7707190L/xx unknown
- 1977-06-21 JP JP7290177A patent/JPS538069A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10349908A1 (de) * | 2003-10-25 | 2005-06-02 | Semikron Elektronik Gmbh | Zweifach passiviertes Leistungshalbleiterbauelement mit einer MESA Randstruktur und Verfahren zu dessen Herstellung |
| DE10349908B4 (de) * | 2003-10-25 | 2007-08-16 | Semikron Elektronik Gmbh & Co. Kg | Zweifach passiviertes Leistungshalbleiterbauelement mit einer MESA Randstruktur und Verfahren zu dessen Herstellung |
| DE10349908C5 (de) * | 2003-10-25 | 2009-02-12 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Herstellung eines zweifach passivierten Leistungshalbleiterbauelements mit einer MESA Randstruktur |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2356276A1 (fr) | 1978-01-20 |
| JPS5639057B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1981-09-10 |
| DE2727487A1 (de) | 1977-12-29 |
| FR2356276B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1983-02-04 |
| NL180265C (nl) | 1987-01-16 |
| JPS538069A (en) | 1978-01-25 |
| NL180265B (nl) | 1986-08-18 |
| NL7706389A (nl) | 1977-12-23 |
| SE7707190L (sv) | 1977-12-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| 8120 | Willingness to grant licences paragraph 23 | ||
| D2 | Grant after examination | ||
| 8363 | Opposition against the patent | ||
| 8339 | Ceased/non-payment of the annual fee |