NL180265C - Halfgeleiderinrichting voor hoge spanning. - Google Patents

Halfgeleiderinrichting voor hoge spanning.

Info

Publication number
NL180265C
NL180265C NLAANVRAGE7706389,A NL7706389A NL180265C NL 180265 C NL180265 C NL 180265C NL 7706389 A NL7706389 A NL 7706389A NL 180265 C NL180265 C NL 180265C
Authority
NL
Netherlands
Prior art keywords
semiconductor
high voltage
voltage
Prior art date
Application number
NLAANVRAGE7706389,A
Other languages
English (en)
Dutch (nl)
Other versions
NL180265B (nl
NL7706389A (nl
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of NL7706389A publication Critical patent/NL7706389A/xx
Publication of NL180265B publication Critical patent/NL180265B/xx
Application granted granted Critical
Publication of NL180265C publication Critical patent/NL180265C/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
NLAANVRAGE7706389,A 1976-06-21 1977-06-10 Halfgeleiderinrichting voor hoge spanning. NL180265C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US69801476A 1976-06-21 1976-06-21

Publications (3)

Publication Number Publication Date
NL7706389A NL7706389A (nl) 1977-12-23
NL180265B NL180265B (nl) 1986-08-18
NL180265C true NL180265C (nl) 1987-01-16

Family

ID=24803556

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7706389,A NL180265C (nl) 1976-06-21 1977-06-10 Halfgeleiderinrichting voor hoge spanning.

Country Status (5)

Country Link
JP (1) JPS538069A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2727487C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2356276A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL180265C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SE (1) SE7707190L (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1212404B (it) * 1979-02-22 1989-11-22 Rca Corp Metodo comportante un singolo attacco per la formazione di un mesa presentante una parete a piu'gradini.
EP0144876B1 (de) * 1983-12-07 1988-03-09 BBC Brown Boveri AG Halbleiterbauelement
DE3422051C2 (de) * 1984-06-14 1986-06-26 Brown, Boveri & Cie Ag, 6800 Mannheim Silizium-Halbleiterbauelement mit ätztechnisch hergestellter Randkontur und Verfahren zur Herstellung dieses Bauelements
JPS6190463A (ja) * 1984-10-11 1986-05-08 Hitachi Ltd 半導体装置
EP0389863B1 (de) * 1989-03-29 1996-12-18 Siemens Aktiengesellschaft Verfahren zur Herstellung eines planaren pn-Übergangs hoher Spannungsfestigkeit
DE10349908C5 (de) * 2003-10-25 2009-02-12 Semikron Elektronik Gmbh & Co. Kg Verfahren zur Herstellung eines zweifach passivierten Leistungshalbleiterbauelements mit einer MESA Randstruktur

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1052661A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1963-01-30 1900-01-01
DE1539961A1 (de) * 1965-03-17 1970-01-22 Fuji Electric Co Ltd Halbleiterbauelement mit mindestens zwei pn-UEbergaengen im einkristallinen Halbleiterkoerper
DE1276207B (de) * 1966-09-09 1968-08-29 Licentia Gmbh Halbleiterbauelement

Also Published As

Publication number Publication date
FR2356276A1 (fr) 1978-01-20
JPS538069A (en) 1978-01-25
NL180265B (nl) 1986-08-18
NL7706389A (nl) 1977-12-23
DE2727487A1 (de) 1977-12-29
JPS5639057B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1981-09-10
FR2356276B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1983-02-04
DE2727487C2 (de) 1985-05-15
SE7707190L (sv) 1977-12-22

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Legal Events

Date Code Title Description
BB A search report has been drawn up
BC A request for examination has been filed
A85 Still pending on 85-01-01
V1 Lapsed because of non-payment of the annual fee